ST-Semtech-2SC945P

2SC945  

NPN Silicon Epitaxial Planar Transistor  

for switching and AF amplifier applications.  

The transistor is subdivided into five groups, R, O,  

Y, P and L, according to its DC current gain. As  

complementary type the PNP transistor 2SA733 is  

recommended.  

On special request, these transistors can be  

manufactured in different pin configurations.  

1. Emitter 2. Collector 3. Base  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

60  

V

V

50  

5

150  

V

Collector Current  

mA  

mW  

Power Dissipation  

P

tot  

250  

O

Junction Temperature  

Storage Temperature Range  

T

j  

150  

C

O

C

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 6 V, I

C

= 1 mA  

Current Gain Group  

R

O

Y

P

L

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

40  

70  

120  

200  

350  

–

–

–

–

–

80  

–

–

–

–

–

140  

240  

400  

700  

Collector Base Cutoff Current  

at V

CB

= 40 V  

Emitter Base Cutoff Current  

at V

EB

= 3 V  

Collector Base Breakdown Voltage  

at I

C

= 100 µA  

Collector Emitter Breakdown Voltage  

at I

C

= 10 mA  

I

CBO  

I

EBO  

–

–

–

100  

nA  

nA  

V

–

100  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

V

CE(sat)  

f

T  

60  

50  

5

–

–

–

–

–

V

Emitter Base Breakdown Voltage  

at I

E

= 10 µA  

–

–

0.3  

–

V

Collector Emitter Saturation Voltage  

at I

C

= 100 mA, I

B

= 10 mA  

Gain Bandwidth Product  

at V

CE

= 6 V, I

C

= 10 mA  

Output Capacitance  

–

V

–

300  

2.5  

MHz  

pF  

C

ob  

–

–

at V

CB

= 6 V, f = 1 MHz  

SEMTECH ELECTRONICS LTD.  

®

Dated

：

12/08/2016 Rev

：

02  

2SC945  

h

FE

– I

C  

Power Dissipation vs Ambient Temperature  

360  

320  

280  

240  

pulse

d  

300  

250  

V

CE

=6.0V  

200  

160  

200  

150  

100  

50  

3.0V  

2.0V  

120  

80  

40  

0

1.0V  

0.5V  

0

0

25  

100  

125  

50  

75  

150  

0.1  

1

10  

100  

0.01  

O

Ambient Temperature: Ta ( C)  

COLLECTOR CURRENT, mA  

Collector current vs.  

Collector current vs.  

collector emitter voltage  

collector emitter voltage  

1.0 0.9  

100  

80  

10  

8

0.8  

0.7  

4.5  

4

0.6  

0.5  

3.5  

0.4  

0.3  

3

60  

40  

20  

6

4

2.5  

2

1.5  

0.2  

1

2

0

I

B

=0.1mA  

IB=0.5  

A

0

0

0

0.4  

0.8 1.2  

1.6 2.0  

10  

20 30  

40  

50  

V

CE

, V  

V

CE

, V  

C

ollector and base saturation  

voltage vs. collector current  

Collector current vs. base emitter voltage  

100  

10  

1

V

CE

=6V  

pulsed  

pulsed  

10  

1

IC/IB=10  

VBE(sat)  

VCE(sat)  

50  

20  

50  

20  

0.1  

0.1  

IC/IB=10  

0.01  

0.01  

100  

0.1  

1

10  

0.7 0.8

 

0.9  

1

0.2  

0.5 0.6  

V

BE

, V  

0.4  

0.3  

Collector Current, mA  

SEMTECH ELECTRONICS LTD.  

®

Dated

：

12/08/2016 Rev

：

02