ST-Semtech-2SD1664RU
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ST 2SD1664U
NPN SILICON EPITAXIAL MEDIUM POWER TRANSISTOR
Absolute Maximum Ratings (T
a
= 25
℃
)
Parameter
Symbol
V
CBO
Value
40
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
V
CEO
32
V
V
EBO
5
V
Collector Current – DC
I
C
I
CP
1
2
A
A
Collector Current – Pulse
1)
0.5
2
2)
P
tot
W
T
o
tal Power Dissipation
Junction
T
e
mperature
T
J
150
℃
℃
Storage
T
e
mperature Range
T
Stg
– 55 to + 150
1)
Single pulse, PW = 100 ms.
2)
When mounted on a 40 X 40 X 0.7 mm ceramic board.
Characteristics at T
a
= 25
℃
Parameter
Symbol
h
FE
h
FE
h
FE
Min.
Typ.
Max.
Unit
DC Current Gain
at V
CE
= 3
V
,
I
C
= 100 mA
Current Gain Group
P
Q
R
82
120
180
–
–
–
180
270
390
–
–
–
Collector Base Breakdown Voltage
at I
C
= 50 µA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
40
32
5
–
–
–
–
V
V
Collector Emitter Breakdown Voltage
at I
C
= 1 mA
–
Emitter Base Breakdown Voltage
at I
E
= 50 µA
–
–
–
V
Collector Cutoff Current
at V
CB
= 20 V
0.5
0.5
0.4
–
µA
µA
V
Emitter Cutoff Current
at V
EB
= 4 V
I
EBO
–
–
Collector Emitter Saturation Voltage
at I
C
= 500 mA, I
B
= 50 mA
V
CE(sat)
f
T
–
–
Transition Frequency
at -I
E
= 50 mA, V
CE
= 5
V
, f =
1
00 MHz
–
150
15
MHz
pF
Output Capacitance
at V
CB
= 10
V
, f = 1
M
Hz
C
ob
–
–
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-
T
e
ch International (BVI) Limited
®
Dated: 07/11/2013
Rev: 01
ST 2SD1664U
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-
T
e
ch International (BVI) Limited
®
Dated: 07/11/2013
Rev: 01
ST 2SD1664U
SOT-89 PACKAGE OUTLINE
Dimensions in mm
SEMTECH ELECTRONICS LTD.
Subsidiary of Sino-
T
e
ch International (BVI) Limited
®
Dated: 07/11/2013
Rev: 01
