ST-Semtech-2SD2391U

Part #ST-Semtech-2SD2391U
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ST-Semtech-2SD2391U
2SD2391U  
NPN Silicon Epitaxial Planar Transistor  
Absolute Maximum Ratings (T

a

= 25
℃
)  
Parameter  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

C  

Value  
Unit  
V
Collector Base Voltage  
Collector Emitter Voltage  
Emitter Base Voltage  
60  
60  
6
V
V
Collector Current  
2
A
Peak Collector Current (P

W

= 10 ms)  
I

CP  

6
A
0.5

1)  

P

tot  

W
Total Power Dissipation  
2

2)  

Junction Temperature  
T

j  

150  
℃
℃
Storage Temperature Range  
T

stg  

– 55 to + 150  
Thermal Characteristics  
Parameter  
Symbol  
R

θJA  

Max.  
Unit  
250

1)  

Thermal Resistance from Junction to Ambient  
62.5

2)  

℃
/W  

1)

Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.  

2)

Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.  
1 / 5  
®
Dated: 20/09/2022 Rev: 04  

2SD2391U  
Characteristics at T

a

= 25
℃  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at V

CE

= 2 V, I

C

= 500 mA  
at V

CE

= 2 V, I

C

= 1.5 A  
h

FE  

h

FE  

120  
45  
–
–
270  
–
–
–
Collector Base Cutoff Current  
at V

CB

= 50 V  
I

CBO  

I

EBO  

–
–
–
100  
nA  
nA  
V
Emitter Base Cutoff Current  
at V

EB

= 5 V  
–
100  
Collector Base Breakdown Voltage  
at I

C

= 50 μA  
V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

V

CE(sat)  

f

T  

60  
60  
6
–
–
–
–
Collector Emitter Breakdown Voltage  
at I

C

= 1 mA  
–
V
Emitter Base Breakdown Voltage  
at I

E

= 50 μA  
–
–
V
Collector Emitter Saturation Voltage  
at I

C

= 1 A, I

B

= 50 mA  
–
0.35  
V
Transition Frequency  
at V

CE

= 2 V, -I

E

= 500 mA, f = 100 MHz  
–
120  
12  
–
–
MHz  
pF  
Collector Output Capacitance  
at V

CB

= 10 V, f = 1 MHz  
C

ob  

–
2 / 5  
®
Dated: 20/09/2022 Rev: 04  

2SD2391U  
Electrical Characteristics Curves  
Fig. 1 Output Characteristics Curve  
Fig. 2 Collector Current vs. Base to Emitter Voltage  
Fig. 4 V

BESAT

vs. Collector Current  
Fig. 3 DC Current Gain vs. Collector Current  
3 / 5  
®
Dated: 20/09/2022 Rev: 04  

2SD2391U  
Electrical Characteristics Curves  
Fig. 6 Output Capacitance  
Fig. 5 V

CESAT

vs. Collector Current  
Fig. 7 Power Derating Curve  
2.4  
2.0  
Device mounted on FR-4  
substrate PC board, 2oz  
copper, with 1-inch square  
copper plate layout  
1.6  
1.2  
0.8  
0.4  
Device mounted on  
FR-4 substrate PC  
board, with minimum  
recommended pad  
0
0
25  
100  
125  
50  
75  
150  
( )  
℃
Ta, Ambient Temperature  
4 / 5  
®
Dated: 20/09/2022 Rev: 04  

2SD2391U  
Package Outline (Dimensions in mm)  
SOT-89  
D
bp  
E
L
HE  
1
2
3
F
F
C
L1  
e
e
A
Unit  
mm  
A
bp  
C
D
E
F
HE  
e
L
L1  
1.6  
1.4  
1.60  
1.50  
0.5  
0.3  
4.6  
4.4  
2.6  
2.4  
0.45  
0.35  
4.25  
3.75  
1.5  
typ.  
1.05  
0.95  
0.51  
0.41  
1.8  
Recommended Soldering Footprint  
90°  
90°  
1.0  
3.0  
1.0  
Packing information  
Pitch  
Reel Size  
Tape Width  
Package  
Per Reel Packing Quantity  
(mm)  
mm  
inch  
mm  
inch  
7
178  
330  
1,000  
4,000  
SOT-89  
12  
8 ± 0.1  
0.315 ± 0.004  
13  
Marking information  
” 2SD2391U ” = Part No.  
” YM ” = Date Code Marking  
” Y ” = Year  
2SD2391U  
” M ” = Month  
Font type: Arial  
5 / 5  
®
Dated: 20/09/2022 Rev: 04