ST-Semtech-8550D-1-5A
| Part # | ST-Semtech-8550D-1-5A |
Download  | ST-Semtech-8550D-1-5A |
8550 (1.5A)
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications.
Especially suitable for AF-driver stages
and low power output stages.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
O
Absolute Maximum Ratings (T
a
= 25
C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-V
CBO
-V
CEO
-V
EBO
-I
C
40
V
V
25
6
V
1.5
A
Power Dissipation
P
tot
1
W
O
Junction Temperature
Storage Temperature Range
T
j
150
C
O
C
T
Stg
– 55 to + 150
O
Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -V
CE
= 1 V, -I
C
= 5 mA
at -V
CE
= 1 V, -I
C
= 100 mA
h
FE
h
FE
h
FE
h
FE
45
120
160
40
–
–
–
–
–
–
–
–
–
Current Gain Group
C
200
300
–
D
at -V
CE
= 1 V, -I
C
= 800 mA
Collector Base Cutoff Current
at -V
CB
= 35 V
-I
CBO
-I
EBO
–
–
–
–
100
nA
nA
V
Emitter Base Cutoff Current
at -V
BE
= 6 V
100
Collector Base Breakdown Voltage
at -I
C
= 100 µA
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
-V
BE
40
25
6
–
–
–
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
–
V
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
–
–
V
Collector Emitter Saturation Voltage
at -I
C
= 800 mA, -I
B
= 80 mA
–
–
0.5
1.2
1
V
Base Emitter Saturation Voltage
at -I
C
= 800 mA, -I
B
= 80 mA
–
–
V
Base Emitter Voltage
at -I
C
= 10 mA, -V
CE
= 1 V
–
–
V
Gain Bandwidth Product
at -V
CE
= 10 V, -I
C
= 50 mA
f
T
120
–
–
–
MHz
pF
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
C
ob
15
–
SEMTECH ELECTRONICS LTD.
®
Dated : 05/04/2016 CL Rev: 01
8550 (1.5A)
SEMTECH ELECTRONICS LTD.
®
Dated : 05/04/2016 CL Rev: 01
