ST-Semtech-8550D
| Part # | ST-Semtech-8550D |
Download  | ST-Semtech-8550D |
8550
PNP Silicon Epitaxial Planar Transistor
for switching and amplifier applications. Especially
suitable for AF-driver stages and low power output
stages.
The transistor is subdivided into four groups, B, C, D
and E, according to its DC current gain.
1. Emitter 2. Base 3. Collector
TO-92 Plastic Package
Absolute Maximum Ratings (T
a
= 25
℃
)
Parameter
Symbol
-V
CBO
-V
CEO
-V
EBO
-I
C
Value
40
Unit
V
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
25
V
6
V
800
100
625
150
mA
mA
mW
℃
Base Current
-I
B
Power Dissipation
P
tot
Junction Temperature
Storage Temperature Range
T
j
T
stg
– 55 to + 150
℃
Characteristics at T
a
= 25
℃
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -V
CE
= 1 V, -I
C
= 100 mA
at -V
CE
= 1 V, -I
C
= 350 mA
Current Gain Group B
h
FE
h
FE
h
FE
h
FE
h
FE
70
120
160
300
60
–
–
–
–
–
120
200
300
380
–
–
–
–
–
–
C
D
E
Collector Base Cutoff Current
at -V
CB
= 35 V
-I
CBO
-V
(BR)CBO
-V
(BR)CEO
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
f
T
–
40
25
6
–
–
100
nA
V
Collector Base Breakdown Voltage
at -I
C
= 10 µA
–
–
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
–
–
–
–
V
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
V
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
–
0.5
1.2
–
V
Base Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
–
–
V
Gain Bandwidth Product
at -V
CE
= 5 V, -I
C
= 10 mA, f = 50 MHz
–
100
12
MHz
pF
Collector Base Capacitance
at -V
CB
= 10 V, f = 1 MHz
C
ob
–
–
SEMTECH ELECTRONICS LTD.
®
Dated : 12/04/2016
Rev: 02
8550
DC current gain
versus collector current
Admissible power dissipation
versus ambient temperature
Collector current
versus base emitter voltage
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
ST 8550
W
mA
10
3
5
1000
700
ST 8550
ST 8550
-V
CE
=1V
1
0.8
0.6
0.4
0.2
0
25
o
-5
0
o
C
500
400
C
o
2
150
C
300
10
2
5
150
o
C
200
h
FE
typical
limits
at Tamb=25
P
tot
-I
C
o
2
-50
C
o
C
100
70
10
5
50
40
2
1
5
30
20
2
10
-1
0
200
o
C
0
1
2 V
10
100
2
-1
3
10
10
10
-I
C
10
1
T
amb
-V
BE
Common emitter
collector characteristics
Common emitter
collector characteristics
Common emitter
collector characteristics
mA
100
mA
500
mA
500
ST 8550
ST 8550
ST 8550
3.2
2.8
0.9
0.35
0.85
2.4
80
60
40
20
0
400
300
200
100
0
400
300
200
100
0
0.3
2
1.8
1.6
0.25
-I
C
1.4
-I
C
-I
C
1.2
0.2
0.8
1
0.15
0.8
0.6
0.4
0.1
-I
B
=0.05mA
0.75
-I
B
=
0.2mA
0
10
20V
-V
CE
-V
BE
=0.7V
0
1
2V
-V
CE
0
1
2V
-V
CE
Base saturation voltage
versus collector current
Collector saturation voltage
versus collector current
ST 8550
V
2
V
0.5
ST 8550
typical
limits
at Tamb=25
typical
li
m
its
at Tamb=25
o
C
o
C
-Ic
=10
-I
B
0.4
0.3
0.2
0.1
0
-Ic
-I
B
–
V
BE
sat
=10
–
V
C
E
sat
1
o
-50
C
o
150
C
o
25
C
o
150
C
o
-50
2
C
0
2
-1
3
10
10
10 mA
10
1
-1
3
10
10
10 mA
10
1
-I
C
-I
C
SEMTECH ELECTRONICS LTD.
®
Dated : 12/04/2016
Rev: 02
