ST-Semtech-9013H

9013  

NPN Silicon Epitaxial Planar Transistor  

for switching and amplifier applications. Especially  

suitable for AF-driver stages and low power output  

stages.  

The transistor is subdivided into three groups, G,  

H and I, according to its DC current gain. As  

complementary type the PNP transistor 9012 is  

recommended.  

1. Emitter 2. Base 3. Collector  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

Unit  

40  

V

V

30  

5

500  

V

Collector Current  

mA  

mW  

Power Dissipation  

P

tot  

625  

O

Junction Temperature  

Storage Temperature Range  

T

j  

150  

C

O

C

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 1 V, I

C

= 50 mA  

Current Gain Group  

G

H

I

h

FE  

h

FE  

h

FE  

h

FE  

110  

177  

250  

40  

183  

250  

380  

–

–

–

–

–

at V

CE

= 1 V, I

C

= 500 mA  

Collector Base Cutoff Current  

at V

CB

= 35 V  

Emitter Base Cutoff Current  

at V

EB

= 5 V  

Collector Bae Breakdown Voltage  

at I

C

= 100

μ

A  

Collector Emitter Breakdown Voltage  

at I

C

= 1 mA  

I

CBO  

I

EBO  

–

–

100  

nA  

nA  

V

100  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

V

CE(sat)  

V

BE(sat)  

V

BE  

40  

30  

5

–

–

V

Emitter Base Breakdown Voltage  

at I

E

= 100

μ

A  

–

V

Collector Emitter Saturation Voltage  

at I

C

= 500 mA, I

B

= 50 mA  

Base Emitter Saturation Voltage  

at I

C

= 500 mA, I

B

= 50 mA  

Base Emitter Voltage  

at V

CE

= 1 V, I

C

= 100 mA  

Gain Bandwidth Product  

at V

CE

= 6 V, I

C

= 20 mA  

–

0.6  

1.2  

1

V

–

V

–

V

f

T  

100  

–

MHz  

SEMTECH ELECTRONICS LTD.  

®

Dated : 19/05/2016

 

Rev:01  

9013  

SEMTECH ELECTRONICS LTD.  

®

Dated : 19/05/2016

 

Rev:01