ST-Semtech-9015C

9015  

PNP Silicon Epitaxial Planar Transistor  

for switching and AF amplifier applications.  

The transistor is subdivided into four groups, A, B,  

C and D, according to its DC current gain. As  

complementary type the NPN transistor 9014 is  

recommended.  

1. Emitter 2. Base 3. Collector  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

Value  

Unit  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

50  

V

V

45  

5

100  

V

mA  

mW  

Power Dissipation  

P

tot  

450  

O

Junction Temperature  

Storage Temperature Range  

T

j  

150  

C

O

C

T

Stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 5 V, -I

C

= 1 mA  

Current Gain Group  

A

B

C

D

h

FE  

h

FE  

h

FE  

h

FE  

60  

150  

300  

600  

800  

–

–

–

100  

200  

400  

Collector Base Cutoff Current  

at -V

CB

= 50 V  

Emitter Base Cutoff Current  

at -V

EB

= 5 V  

Collector Base Breakdown Voltage  

at -I

C

= 100 µA  

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

-I

CBO  

-I

EBO  

–

–

50  

nA  

nA  

V

50  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(sat)  

f

T  

50  

45  

5

–

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 100 µA  

–

0.65  

1

V

Collector Emitter Saturation Voltage  

at -I

C

= 100 mA, -I

B

= 5 mA  

Base Emitter Saturation Voltage  

at -I

C

= 100 mA, -I

B

= 5 mA  

Gain Bandwidth Product  

at -V

CE

= 10 V, -I

C

= 10 mA  

Output Capacitance  

–

V

–

V

100  

–

–

MHz  

pF  

C

OB  

7

at -V

CB

= 10 V, f = 1 MHz  

SEMTECH ELECTRONICS LTD.  

®

Dated : 19/05/2016 Rev:01  

9015  

SEMTECH ELECTRONICS LTD.  

®

Dated : 19/05/2016 Rev:01