ST-Semtech-BC807-25-5CS

Part #ST-Semtech-BC807-25-5CS
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ST-Semtech-BC807-25-5CS
BC807 / BC808-AH  
PNP Silicon Epitaxial Planar Transistors  
for switching, AF driver and amplifier applications  
These transistors are subdivided into three groups -16,  
-25 and -40, according to their current gain.  
As complementary types the NPN transistors BC817  
and BC818 are recommended.  
TO-236 Plastic Package  
Features  
• AEC-Q101 Qualified and PPAP Capable  
• Halogen and Antimony Free(HAF), RoHS compliant  
O
Absolute Maximum Ratings (T

a

= 25
 
C)  
Parameter  
Symbol  
-V

CBO  

Value  
Unit  
Collector Base Voltage  
BC807  
BC808  
BC807  
BC808  
50  
30  
45  
25  
V
V
Collector Emitter Voltage  
-V

CEO  

Emitter Base Voltage  
Collector Current  
-V

EBO  

-I

C  

5
500  
V
mA  
mW  
Power Dissipation  
P

tot  

T

j  

300  
O
C
Junction
T
e
mperature  
Storage
T
e
mperature Range  
150  
O
C
T

stg  

– 55 to + 150  
O
Electrical Characteristics at T

a

= 25
 
C  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
DC Current Gain  
at -V

CE

= 1
V
,
–
I

C

= 100 mA  
Current Gain Group
 
-16  
h

FE  

h

FE  

h

FE  

h

FE  

100  
160  
250  
40  
–
–
–
–
250  
400  
600  
–
–
–
–
–
-25  
-40  
at -V

CE

= 1
V
,
–
I

C

= 500 mA  
Collector Base Cutoff Current  
at -V

CB

= 20 V  
-I

CBO  

-I

EBO  

–
–
–
–
100  
100  
0.7  
1.2  
–
nA  
nA  
V
Emitter Base Cutoff Current  
at -V

EB

= 5 V  
Collector Emitter Saturation Voltage  
at -I

C

= 500 mA, -I

B

= 50 mA  
-V

CE(sat)  

-V

BE(on)  

f

T  

–
–
Base Emitter Voltage  
at -I

C

= 500 mA, -V

CE

= 1 V  
–
–
V
Transition Frequency  
at -V

CE

= 5
V
,
–
I

C

= 10 mA, f = 50 MHz  
80  
–
–
MHz  
pF  
Collector Base Capacitance  
at -V

CB

= 10
V
, f = 1
M
Hz  
C

cbo  

9
–
SEMTECH ELECTRONICS LTD.  
®
Dated
:
13/09/2016 Rev
:
01  

BC807 / BC808-AH  
500  
400  
300  
200  
100  
0
25  
200  
0
100  
150  
O
Ambient Temperature: Ta ( C)  
Power Derating Curve  
SEMTECH ELECTRONICS LTD.  
®
Dated
:
13/09/2016 Rev
:
01