ST-Semtech-BC807-25-5CS
| Part # | ST-Semtech-BC807-25-5CS |
| Download | ST-Semtech-BC807-25-5CS |
BC807 / BC808-AH
PNP Silicon Epitaxial Planar Transistors
for switching, AF driver and amplifier applications
These transistors are subdivided into three groups -16,
-25 and -40, according to their current gain.
As complementary types the NPN transistors BC817
and BC818 are recommended.
TO-236 Plastic Package
Features
• AEC-Q101 Qualified and PPAP Capable
• Halogen and Antimony Free(HAF), RoHS compliant
O
Absolute Maximum Ratings (T
a
= 25
C)
Parameter
Symbol
-V
CBO
Value
Unit
Collector Base Voltage
BC807
BC808
BC807
BC808
50
30
45
25
V
V
Collector Emitter Voltage
-V
CEO
Emitter Base Voltage
Collector Current
-V
EBO
-I
C
5
500
V
mA
mW
Power Dissipation
P
tot
T
j
300
O
C
Junction
T
e
mperature
Storage
T
e
mperature Range
150
O
C
T
stg
– 55 to + 150
O
Electrical Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Typ.
Max.
Unit
DC Current Gain
at -V
CE
= 1
V
,
–
I
C
= 100 mA
Current Gain Group
-16
h
FE
h
FE
h
FE
h
FE
100
160
250
40
–
–
–
–
250
400
600
–
–
–
–
–
-25
-40
at -V
CE
= 1
V
,
–
I
C
= 500 mA
Collector Base Cutoff Current
at -V
CB
= 20 V
-I
CBO
-I
EBO
–
–
–
–
100
100
0.7
1.2
–
nA
nA
V
Emitter Base Cutoff Current
at -V
EB
= 5 V
Collector Emitter Saturation Voltage
at -I
C
= 500 mA, -I
B
= 50 mA
-V
CE(sat)
-V
BE(on)
f
T
–
–
Base Emitter Voltage
at -I
C
= 500 mA, -V
CE
= 1 V
–
–
V
Transition Frequency
at -V
CE
= 5
V
,
–
I
C
= 10 mA, f = 50 MHz
80
–
–
MHz
pF
Collector Base Capacitance
at -V
CB
= 10
V
, f = 1
M
Hz
C
cbo
9
–
SEMTECH ELECTRONICS LTD.
®
Dated
:
13/09/2016 Rev
:
01
BC807 / BC808-AH
500
400
300
200
100
0
25
200
0
100
150
O
Ambient Temperature: Ta ( C)
Power Derating Curve
SEMTECH ELECTRONICS LTD.
®
Dated
:
13/09/2016 Rev
:
01
