ST-Semtech-BC817-40-6CT

BC817 / BC818  

NPN Silicon Epitaxial Planar Transistors  

for switching, AF driver and amplifier application,  

These transistors are subdivided into three groups  

-16, -25, -40 according to their current gain.  

As complementary types, the PNP transistors  

BC807 and BC808 are recommended.  

TO-236 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

V

CBO  

Value  

Unit  

V

Collector Base Voltage  

BC817  

BC818  

BC817  

BC818  

50  

30  

45  

25  

Collector Emitter Voltage  

V

CEO  

V

Emitter Base Voltage  

Collector Current  

V

EBO  

I

C  

5

500  

V

mA  

mW  

Power Dissipation  

P

tot  

T

j  

300  

O

C

Junction

T

e

mperature  

Storage

T

e

mperature Range  

150  

O

C

T

stg  

– 55 to + 150  

O

Electrical Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 1

V

,

I

C

= 100 mA  

Current Gain Group

 

-16  

h

FE  

h

FE  

h

FE  

h

FE  

100  

160  

250  

40  

–

–

–

–

250  

400  

600  

–

–

–

–

–

-25  

-40  

at V

CE

= 1

V

,

I

C

= 500 mA  

Collector Base Cutoff Current  

at V

CB

= 20 V  

I

CBO  

I

EBO  

V

CE(sat)  

V

BE(on)  

–

–

–

–

–

–

–

–

100  

100  

0.7  

nA  

nA  

V

Emitter Base Cutoff Current  

at V

EB

= 5 V  

Collector Emitter Saturation Voltage  

at I

C

= 500 mA, I

B

= 50 mA  

Base Emitter Voltage  

at I

C

= 500 mA, V

CE

= 1 V  

1.2  

V

Transition Frequency  

at V

CE

= 5

V

,

I

C

= 10 mA, f = 50 MHz  

f

T  

100  

–

–

–

–

MHz  

pF  

Collector Base Capacitance  

at V

CB

= 10

V

, f = 1

M

Hz  

C

ob  

5

SEMTECH ELECTRONICS LTD.  

®

Dated

：

16/03/2015 Rev

：

01  

BC817 / BC818  

500  

400  

300  

200  

100  

0

25  

200  

0

100  

150  

O

Am b

i

ent

 

Tem perature:

 

Ta ( C

 

)  

Pow er

 

D erating

 

Curve  

SEMTECH ELECTRONICS LTD.  

®

Dated

：

16/03/2015 Rev

：

01