ST-Semtech-BC848A

Part #	ST-Semtech-BC848A
Download	ST-Semtech-BC848A

BC846…BC850

NPN Silicon Epitaxial Transistor

for switching and amplifier applications

TO-236 Plastic Package

Absolute Maximum Ratings (T

a

= 25

℃

)

Parameter

Symbol

Value

Unit

Collector Base Voltage

Collector Emitter Voltage

Emitter Base Voltage

BC846

V

CBO

V

CBO

V

CBO

V

CEO

V

CEO

V

CEO

V

EBO

V

EBO

80

50

30

65

45

30

6

V

V

V

V

V

V

V

V

BC847, BC850

BC848, BC849

BC846

BC847, BC850

BC848, BC849

BC846, BC847

BC848, BC849, BC850

5

Collector Current

I

C

I

CM

P

tot

T

j

100

200

mA

mA

mW

℃

Peak Collector Current

Power Dissipation

300

Junction Temperature

Storage Temperature Range

150

T

stg

– 65 to + 150

℃

Thermal Characteristics

Parameter

Thermal Resistance from Junction to Ambient

1)

Symbol

R

θJA

Value

417

Unit

℃

/W

^{1)
Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.}

®

1 / 5

Dated: 08/07/2021 Rev: 04

BC846…BC850

Characteristics at T

a

= 25

℃

Parameter

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain

at V

CE

= 5 V, I

C

= 2 mA

Current Gain Group

A

h

FE

h

FE

h

FE

110

200

420

–

–

–

220

450

800

–

–

–

B

C

Collector Base Cutoff Current

at V

CB

= 30 V

I

CBO

–

–

15

nA

Collector Base Breakdown Voltage

at I

C

= 100 µA

V

(BR)CBO

V

(BR)CBO

V

(BR)CBO

80

50

30

–

–

–

–

–

–

V

V

V

BC846

BC847, BC850

BC848, BC849

Collector Emitter Breakdown Voltage

at I

C

= 2 mA

V

(BR)CEO

V

(BR)CEO

V

(BR)CEO

65

45

30

–

–

–

–

–

–

V

V

V

BC846

BC847, BC850

BC848, BC849

Collector Emitter Breakdown Voltage

at I

C

= 100 µA

BC846, BC847

BC848,BC849,BC850

V

(BR)EBO

V

(BR)EBO

6

5

–

–

–

–

V

V

Collector Emitter Saturation Voltage

at I

C

= 10 mA, I

B

= 0.5 mA

at I

C

= 100 mA, I

B

= 5 mA

Base Emitter On Voltage

at V

CE

= 5 V, I

C

= 2 mA

V

CE(sat)

V

CE(sat)

–

–

–

–

250

600

mV

mV

V

BE(on)

V

BE(on)

580

–

–

–

700

720

mV

mV

at V

CE

= 5 V, I

C

= 10 mA

Transition Frequency

at V

CE

= 5 V, I

C

= 10 mA, f = 100 MHz

f

T

–

–

–

300

–

6

–

MHz

pF

Output Capacitance

at V

CB

= 10 V, f = 1 MHz

C

ob

C

ib

–

Input Capacitance

at V

EB

= 0.5 V, f = 1 MHz

9

pF

®

2 / 5

Dated: 08/07/2021 Rev: 04

BC846…BC850

Electrical Characteristics Curves

Fig. 1 Output Characteristics Curve

Fig. 2 Output Characteristics Curve

Fig. 3 Collector Current vs. V

BE

Fig 4. DC Current Gain vs. Collector Current

V

CE

=5V

V

CE

=5V

®

3 / 5

Dated: 08/07/2021 Rev: 04

BC846…BC850

Electrical Characteristics Curves

Fig 6. V

CE(sat)

vs. Collector Current

Fig 5. V

BE(sat)

vs. Collector Current

I

C

/I

B

=20

I

C

/I

B

=20

Fig 8. Power Derating Curve

Fig 7. Capacitance

425

375

300

225

1

5

0

75

0

0

25

1

0

0

12 5

5 0

75

150

T

a

,

A m b

i

e

n

t

T em pe rature

(

℃

)

®

4 / 5

Dated: 08/07/2021 Rev: 04

BC846…BC850

Package Outline (Dimensions in mm)

TO-236

Unit

mm

A

A1

B

C

D

E

F

G

L

L1

0.2

1.20

0.89

0.100

0.013

1.40

1.20

0.19

0.08

3.04

2.80

2.6

2.2

1.02

0.89

2.04

1.78

0.51

0.37

MIN

Recommended Soldering Footprint

0.8

0.8

1.9

Packing information

Pitch

Reel Size

Tape Width

Package

Per Reel Packing Quantity

3,000

(mm)

mm

inch

mm

178

inch

TO-236

8

4 ± 0.1

0.157 ± 0.004

7

Marking information

” ** ” = Part No.

“YM” = Date Code Marking

“Y” = Year

**

“M” = Month

Font type: Arial

®

5 / 5

Dated: 08/07/2021 Rev: 04