ST-Semtech-BC856B
| Part # | ST-Semtech-BC856B |
Download  | ST-Semtech-BC856B |
BC856…BC860
PNP Silicon Epitaxial Transistor
for switching and amplifier applications
TO-236 Plastic Package
O
Absolute Maximum Ratings (T
a
= 25
C)
Parameter
Symbol
Value
Unit
Collector Base Voltage
BC856
-V
CBO
-V
CBO
-V
CBO
-V
CEO
-V
CEO
-V
CEO
80
50
30
65
45
30
V
V
V
V
V
V
BC857, BC860
BC858, BC859
BC856
BC857, BC860
BC858, BC859
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
-V
EBO
-I
C
5
100
V
mA
mA
mW
Peak Collector Current
Power Dissipation
-I
CM
P
tot
T
j
200
200
O
C
Junction
T
e
mperature
Storage
T
e
mperature Range
150
O
C
T
stg
– 65 to + 150
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
BC856…BC860
O
Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -V
CE
= 5
V
,
–
I
C
= 2 mA
Current Gain Group
h
FE
h
FE
h
FE
125
220
420
250
475
800
–
–
–
A
B
C
Collector Base Cutoff Current
at -V
CB
= 30 V
-I
CBO
–
15
nA
Collector Base Breakdown Voltage
at -I
C
= 10 µA
BC856
BC857, BC860
-V
(BR)CBO
BC858, BC859
-V
(BR)CBO
-V
(BR)CBO
80
50
30
–
–
–
V
V
V
Collector Emitter Breakdown Voltage
at -I
C
= 10 µA
-V
(BR)CES
-V
(BR)CES
-V
(BR)CES
80
50
30
–
–
–
V
V
V
BC856
BC857, BC860
BC858, BC859
Collector Emitter Breakdown Voltage
at -I
C
= 10 mA
BC856
BC857, BC860
-V
(BR)CEO
BC858, BC859
-V
(BR)CEO
-V
(BR)CEO
65
45
30
–
–
–
V
V
V
Emitter Base Breakdown Voltage
at -I
E
= 1 µA
-V
(BR)EBO
5
–
V
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
at -I
C
= 100 mA, -I
B
= 5 mA
-V
CE(sat)
-V
CE(sat)
–
–
0.3
0.65
V
V
Base Emitter On Voltage
at -V
CE
= 5
V
,
–
I
C
= 2 mA
at -V
CE
= 5
V
,
–
I
C
= 10 mA
-V
BE(on)
-V
BE(on)
0.6
–
0.75
0.82
V
V
Current Gain Bandwidth Product
at -V
CE
= 5
V
,
–
I
C
= 10 mA, f = 100 MHz
f
T
100
–
–
MHz
pF
Collector Output Capacitance
at -V
CB
= 10
V
, f = 1
M
Hz
C
ob
6
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
BC856…BC860
SEMTECH ELECTRONICS LTD.
®
Dated
：
16/03/2015 Rev
：
01
