ST-Semtech-MMBT3904-t1A

MMBT3904  

NPN Silicon General Purpose Transistor  

for switching and amplifier applications.  

TO-236 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

Value  

Unit  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

V

CBO  

V

CEO  

V

EBO  

I

C  

60  

V

V

40  

6

200  

V

mA  

mW  

Power Dissipation  

P

tot  

T

j  

350  

O

C

Junction

T

e

mperature  

Storage

T

e

mperature Range  

150  

O

C

T

stg  

– 55 to + 150  

SEMTECH ELECTRONICS LTD.  

®

Dated : 16/03/2015

 

Rev: 02  

MMBT3904  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at V

CE

= 1

V

,

I

C

= 0.1 mA  

at V

CE

= 1

V

,

I

C

= 1 mA  

at V

CE

= 1

V

, I

C

= 10 mA  

at V

CE

= 1

V

, I

C

= 50 mA  

at V

CE

= 1

V

, I

C

= 100 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

40  

70  

100  

60  

–

–

–

–

–

–

–

300  

–

–

30  

Collector Base Cutoff Current  

at V

CB

= 30 V  

Emitter Base Cutoff Current  

at V

EB

= 6 V  

Collector Base Breakdown Voltage  

at I

C

= 10 µA  

Collector Emitter Breakdown Voltage  

at I

C

= 1 mA  

I

CBO  

–

–

50  

50  

–

nA  

nA  

V

I

EBO  

V

(BR)CBO  

V

(BR)CEO  

V

(BR)EBO  

60  

40  

6

–

V

Emitter Base Breakdown Voltage  

at I

E

= 10 µA  

–

V

Collector Emitter Saturation Voltage  

at I

C

= 10 mA, I

B

= 1 mA  

at I

C

= 50 mA, I

B

= 5 mA  

V

CE(sat)  

V

CE(sat)  

–

–

0.2  

0.3  

V

V

Base Emitter Saturation Voltage  

at I

C

= 10 mA, I

B

= 1 mA  

at I

C

= 50 mA, I

B

= 5 mA  

V

BE(sat)  

V

BE(sat)  

0.65  

–

0.85  

0.95  

V

V

Current Gain Bandwidth Product  

at V

CE

= 20

V

, I

C

= 10 mA, f = 100 MHz  

f

T  

C

ob  

t

d  

300  

–

4

MHz  

pF  

ns  

Collector Output Capacitance  

at V

CB

= 5

V

, I

E

= 0, f = 1 MHz  

–

–

–

–

–

Delay Time  

35  

35  

200  

50  

at V

CC

= 3

V

, V

BE

= 0.5

V

, I

C

= 10 mA, I

B1

= 1 mA  

Rise Time  

t

r  

ns  

at V

CC

= 3

V

, V

BE

= 0.5

V

, I

C

= 10 mA, I

B1

= 1 mA  

Storage Time  

at V

CC

= 3

V

,

I

C

= 10 mA, I

B1

= -I

B2

= 1 mA  

t

s  

ns  

Fall Time  

t

f  

ns  

at V

CC

= 3

V

,

I

C

= 10 mA, I

B1

= -I

B2

= 1 mA  

SEMTECH ELECTRONICS LTD.  

®

Dated : 16/03/2015

 

Rev: 02  

MMBT3904  

SEMTECH ELECTRONICS LTD.  

®

Dated : 16/03/2015

 

Rev: 02