ST-Semtech-MMBT3906-2A

MMBT3906  

PNP Silicon General Purpose Transistor  

for switching and amplifier applications.  

As complementary types the NPN transistors  

MMBT3904 is recommended.  

TO-236 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

Value  

Unit  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

40  

V

V

40  

6

200  

V

mA  

mW  

Power Dissipation  

P

tot  

350  

O

Junction

T

e

mperature  

Storage

T

e

mperature Range  

T

j  

150  

C

O

C

T

stg  

– 55 to + 150  

SEMTECH ELECTRONICS LTD.  

®

Dated : 16/03/2015

 

Rev: 01  

MMBT3906  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -V

CE

= 1

V

,

–

I

C

= 0.1 mA  

at -V

CE

= 1

V

,

–

I

C

= 1 mA  

at -V

CE

= 1

V

,

–

I

C

= 10 mA  

at -V

CE

= 1

V

,

–

I

C

= 50 mA  

at -V

CE

= 1

V

,

–

I

C

= 100 mA  

h

FE  

h

FE  

h

FE  

h

FE  

h

FE  

60  

80  

100  

60  

–

–

–

–

–

–

–

300  

–

–

30  

Collector Base Cutoff Current  

at -V

CB

= 30 V  

-I

CBO  

–

–

50  

50  

–

nA  

nA  

V

Emitter Base Cutoff Current  

at -V

EB

= 6 V  

-I

EBO  

Collector Base Breakdown Voltage  

at -I

C

= 10 µA  

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

40  

40  

6

–

V

Emitter Base Breakdown Voltage  

at -I

E

= 10 µA  

–

V

Collector Emitter Saturation Voltage  

at -I

C

= 10 mA, -I

B

=1 mA  

at -I

C

= 50 mA, -I

B

= 5 mA  

-V

CE(sat)  

-V

CE(sat)  

–

–

0.25  

0.4  

V

V

Base Emitter Saturation Voltage  

at -I

C

= 10 mA, -I

B

= 1 mA  

at -I

C

= 50 mA, -I

B

= 5 mA  

-V

BE(sat)  

-V

BE(sat)  

0.65  

–

0.85  

0.95  

V

V

Current Gain Bandwidth Product  

at -V

CE

= 20

V

,

–

I

C

= 10 mA, f = 100 MHz  

f

T  

C

obo  

t

d  

250  

–

MHz  

pF  

ns  

Output Capacitance  

at -V

CB

= 5

V

, I

E

= 0, f = 1 MHz  

–

–

–

–

–

4.5  

35  

Delay Time  

at -V

CC

= 3

V

,

–

V

BE

= 0.5

V

,

–

I

C

= 10 mA, -I

B1

= 1 mA  

Rise Time  

t

r  

35  

ns  

at -V

CC

= 3

V

,

–

V

BE

= 0.5

V

,

–

I

C

= 10 mA, -I

B1

= 1 mA  

Storage Time  

at -V

CC

= 3

V

,

–

I

C

= 10 mA, -I

B1

= I

B2

= 1 mA  

t

s  

225  

75  

ns  

Fall Time  

t

f  

ns  

at -V

CC

= 3

V

,

–

I

C

= 10 mA, -I

B1

= I

B2

= 1 mA  

SEMTECH ELECTRONICS LTD.  

®

Dated : 16/03/2015

 

Rev: 01  

MMBT3906  

Power Dissipation vs Ambient Temperature  

300  

250  

200  

150  

100  

50  

0

0

25  

100  

125  

50  

75  

150  

O

Ambient Temperature: Ta ( C)  

SEMTECH ELECTRONICS LTD.  

®

Dated : 16/03/2015

 

Rev: 01