ST-Semtech-MMBT7002K
| Part # | ST-Semtech-MMBT7002K |
Download  | ST-Semtech-MMBT7002K |
MMBT7002K
N-Channel Enhancement Mode MOSFET
Features
Drain
• Low on resistance R
DS(ON)
• Low gate threshold voltage
• Low input capacitance
• ESD protected up to 2KV
Gate
1.Gate 2.Source 3.Drain
TO-236 Plastic Package
Source
Absolute Maximum Ratings (
at T
a
= 25
℃
unless otherwise specified
)
Parameter
Symbol
V
DSS
V
GSS
I
D
Value
Unit
V
Drain-Source Voltage
Gate-Source Voltage
60
± 20
V
Drain Current (Continuous)
300
mA
mA
mW
Drain Current (Pulse Width ≤ 10 µs)
Total Power Dissipation
I
DM
800
P
tot
350
O
Operating and Storage Temperature Range
T
j
, T
stg
– 55 to + 150
C
Thermal Characteristics
Parameter
Symbol
R
θJA
Value
357
Unit
Thermal Resistance-Junction to Ambient
1)
℃/W
1)
Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
®
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Dated: 08/09/2020 Rev: 07
MMBT7002K
Characteristics at T
a
= 25
℃
unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
STATIC PARAMETERS
Drain Source Breakdown Voltage
at I
D
= 10 µA
BV
DSS
I
DSS
60
–
–
–
–
V
Zero Gate Voltage Drain Current
at V
DS
= 60 V
1
µA
Gate Source Leakage Current
at V
GS
= ± 20 V
I
GSS
–
–
–
± 10
2.5
µA
V
Gate Threshold Voltage
at V
DS
= V
GS
, I
D
= 250 µA
V
GS(th)
1
Static Drain Source On-Resistance
at V
GS
= 10 V, I
D
= 500 mA
at V
GS
= 4.5 V, I
D
= 200 mA
–
–
–
–
3
4
R
DS(ON)
Ω
DYNAMIC PARAMETERS
Forward Transconductance
at V
DS
= 10 V, I
D
= 200 mA
80
–
–
–
–
mS
Ω
g
FS
R
g
Gate Resistance
200
22.5
9
at V
GS
= 0 V, V
DS
= 0 V, f = 1MHz
Input Capacitance
at V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
C
iss
C
oss
C
rss
Q
g
–
50
25
10
–
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Output Capacitance
at V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
–
Reverse Transfer Capacitance
at V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
–
7.5
0.44
0.2
0.1
2.7
2.5
13
Gate charge total
at V
DS
=10 V, I
D
= 0.5 A, V
GS
= 4.5 V
–
Gate to Source Gate Charge
at V
DS
=10 V, I
D
= 0.5 A, V
GS
= 4.5 V
Q
gs
Q
gd
t
d(on)
t
r
–
–
Gate to Drain Charge
at V
DS
=10 V, I
D
= 0.5 A, V
GS
= 4.5 V
–
–
Turn-On Delay Time
at V
DS
= 30 V, V
GS
= 10 V, I
D
= 0.5 A, R
G
= 25 Ω
–
–
Turn-On Rise Time
at V
DS
= 30 V, V
GS
= 10 V, I
D
= 0.5 A, R
G
= 25 Ω
–
–
Turn-Off Delay Time
at V
DS
= 30 V, V
GS
= 10 V, I
D
= 0.5 A, R
G
= 25 Ω
t
d(off)
t
f
–
–
Turn-Off Fall Time
at V
DS
= 30 V, V
GS
= 10 V, I
D
= 0.5 A, R
G
= 25 Ω
–
8
–
Body-Diode PARAMETERS
Drain-Source Diode Forward Voltage
at V
GS
= 0 V, I
S
= 0.5 A
V
SD
t
rr
–
–
–
0.85
30
–
–
–
V
Body Diode Reverse Recovery Time
at I
S
= 0.5 A, di/dt = 100 A / µs
ns
nC
Body Diode Reverse Recovery Charge
at I
S
= 0.5 A, di/dt = 100 A / µs
Q
rr
29
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Dated: 08/09/2020 Rev: 07
MMBT7002K
Electrical Characteristics Curves
Fig. 2 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristic
Fig. 4 on-Resistance vs.T
j
Fig. 3 Gate-Source Voltage vs.R
DS(on)
Fig. 6 Typical Forward Characteristic
Fig. 5 Drain Current vs. on-Resistance
®
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Dated: 08/09/2020 Rev: 07
MMBT7002K
Electrical Characteristics Curves
Fig. 8 Gate Charge
Fig. 7 Typical Junction Capacitance
Fig. 9 Gate Threshold Variation vs. T
j
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Dated: 08/09/2020 Rev: 07
MMBT7002K
Test Circuits
Fig.1-1 Switching times test circuit
Fig.1-2 Switching Waveform
Fig.2-2 Gate charge waveform
Fig.2-1 Gate charge test circuit
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Dated: 08/09/2020 Rev: 07
MMBT7002K
PACKAGE OUTLINE
Plastic surface mounted package (Dimensions in mm)
TO-236
Recommended Soldering Footprint
0.8
0.8
1.9
Packing information
Pitch
Reel Size
Tape Width
(mm)
Package
TO-236
Per Reel Packing Quantity
mm
inch
0.157 ± 0.004
mm
178
inch
7
8
4 ± 0.1
3,000
Marking information
” K72 ” = Part No.
“YM” = Date Code Marking
“Y” = Year
K72
“M” = Month
Font type: Arial
®
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Dated: 08/09/2020 Rev: 07
