ST-Semtech-MMBT9012H-H23

MMBT9012H-H23  

PNP Silicon Epitaxial Planar Transistors  

for switching and amplifier applications.  

TO-236 Plastic Package  

Absolute Maximum Ratings (T

a

= 25

℃

)  

Parameter  

Symbol  

-V

CBO  

-V

CEO  

-V

EBO  

-I

C  

Value  

Unit  

Collector Base Voltage  

Collector Emitter Voltage  

Emitter Base Voltage  

Collector Current  

40  

V

V

30  

5

500  

V

mA  

mW  

Power Dissipation  

P

tot  

200  

O

Junction Temperature  

Storage Temperature Range  

T

j  

150  

C

O

C

T

stg  

– 55 to + 150  

Characteristics at T

a

= 25

℃  

Parameter  

Symbol  

h

FE  

-I

CBO  

Min.  

Max.  

300  

Unit  

DC Current Gain  

200  

–

nA  

nA  

V

at -V

CE

= 1 V, -I

C

= 50 mA  

Collector Base Cutoff Current  

at -V

CB

= 35 V  

Emitter Base Cutoff Current  

at -V

EB

= 5 V  

Collector Base Breakdown Voltage  

at -I

C

= 100

μ

A  

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

Emitter Base Breakdown Voltage  

at -I

E

= 100

μ

A  

Collector Emitter Saturation Voltage  

at -I

C

= 500 mA, -I

B

= 50 mA  

Base Emitter Saturation Voltage  

at -I

C

= 500 mA, -I

B

= 50 mA  

Base Emitter Voltage  

at -V

CE

= 1 V, -I

C

= 100 mA  

Gain Bandwidth Product  

at -V

CE

= 6 V, -I

C

= 20 mA  

–

–

100  

-I

EBO  

100  

-V

(BR)CBO  

-V

(BR)CEO  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(sat)  

-V

BE  

40  

30  

5

–

–

V

–

V

–

0.6  

1.2  

1

V

–

V

–

V

f

T  

100  

–

MHz  

®

Dated: 09/01/2016

 

Rev: 01