ST-Semtech-MMBTA92
| Part # | ST-Semtech-MMBTA92 |
Download  | ST-Semtech-MMBTA92 |
MMBTA92 / MMBTA93
PNP Silicon High Voltage Transistors
for high voltage switching and amplifier applications.
TO-236 Plastic Package
O
Absolute Maximum Ratings (T
a
= 25
C)
Parameter
Symbol
-V
CBO
Value
Unit
Collector Base Voltage
MMBTA92
MMBTA93
300
200
300
200
V
V
Collector Emitter Voltage
MMBTA92
MMBTA93
-V
CEO
5
V
Emitter Base Voltage
Collector Current
-V
EBO
-I
C
500
350
mA
mW
T
o
tal Power Dissipation
Junction
T
e
mperature
Storage
T
e
mperature Range
P
tot
T
j
O
C
150
O
C
T
stg
– 55 to + 150
O
Characteristics at T
a
= 25
C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
at -V
CE
= 10
V
,
–
I
C
= 1 mA
at -V
CE
= 10
V
,
–
I
C
= 10 mA
at -V
CE
= 10
V
,
–
I
C
= 30 mA
h
FE
h
FE
h
FE
25
80
25
–
200
–
–
–
–
Collector Base Cutoff Current
at -V
CB
= 200 V
at -V
CB
= 160 V
-I
CBO
-I
CBO
–
–
0.25
0.25
MMBTA92
MMBTA93
µA
µA
V
Emitter Base Cutoff Current
at -V
EB
= 3 V
-I
EBO
–
0.1
Collector Base Breakdown Voltage
at -I
C
= 100 µA
MMBTA92 -V
(BR)CBO
MMBTA93 -V
(BR)CBO
300
200
–
–
Collector Emitter Breakdown Voltage
at -I
C
= 1 mA
MMBTA92 -V
(BR)CEO
MMBTA93 -V
(BR)CEO
300
200
–
–
V
Emitter Base Breakdown Voltage
at -I
E
= 100 µA
-V
(BR)EBO
-V
CE(sat)
-V
BE(sat)
f
T
5
–
–
V
V
Collector Emitter Saturation Voltage
at -I
C
= 20 mA, -I
B
= 2 mA
0.5
0.9
–
Base Emitter Saturation Voltage
at -I
C
= 20 mA, -I
B
= 2 mA
–
V
Current Gain Bandwidth Product
at -V
CE
= 20
V
,
–
I
C
= 10 mA, f = 100 MHz
50
MHz
Collector Base Capacitance
at -V
CB
= 20
V
, f = 1
M
Hz
MMBTA92
MMBTA93
–
–
6
8
C
cb
pF
SEMTECH ELECTRONICS LTD.
®
Dated :16/03/2015
Rev:01
MMBTA92 / MMBTA93
SEMTECH ELECTRONICS LTD.
®
Dated :16/03/2015
Rev:01
