ST-Semtech-MMFTP3401
| Part # | ST-Semtech-MMFTP3401 |
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MMFTP3401
P-Channel Enhancement Mode MOSFET
1. Gate 2. Source 3. Drain
TO-236 Plastic Package
Absolute Maximum Ratings
Parameter
Symbol
-V
DS
Value
30
Unit
V
Drain-Source Voltage
Gate-Source Voltage
Drain Current
V
GS
± 12
V
4
3.2
T
A
= 25℃
-I
D
A
A
T
A
= 70℃
Peak Drain Current
1)
Power Dissipation
2)
-I
DM
27
T
A
= 25℃
T
A
= 70℃
1.4
0.9
P
D
W
Junction and Storage Temperature Rang
1)
Repetitive rating,pulse width limited by junction temperature T
J(MAX)
= 150
℃
.Ratings are based on low frequency and duty cycles to keep initial T
j
= 25
℃
2)
The power dissipation P
D
is based on T
J(MAX)
= 150
℃
.using
≤
10 s Junction to ambient thermal resistance.
T
J
,T
stg
– 55 to + 150
℃
Thermal Characteristics
Parameter
Symbol
R
θ
JA
Max.
Unit
Maximum Thermal Resistance from Juntion to Ambient
at t
≤
10s
1)
90
125
℃
/W
at steady-state
1) 2)
1)
The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2 oz. Copper, in a still air environment with T
A
=25
℃
.The value in any given application
depends on the user’s specific board design.
2)
The R
θ
JA
is the sum of the thermal impedence from junction to lead R
θ
JL
and lead to ambient.
SEMTECH ELECTRONICS LTD.
®
Dated: 16/03/2015
Rev: 01
CL
MMFTP3401
Characteristics at T
j
= 25
℃
unless otherwise specified
Parameter
Symbol
-BV
DSS
Min.
30
Typ.
–
Max.
–
Unit
V
Drain-Source Breakdown Voltage
at -I
D
= 250 µA
Gate-Source Threshold Voltage
at V
DS
= V
GS
, -I
D
= 250 uA
-V
GSth
0.5
–
1.3
V
Drain-Source Leakage Current
at -V
DS
= 30 V
at -V
DS
= 30 V, T
j
= 55
℃
–
–
–
–
1
5
-I
DSS
µA
Gate Leakage Current
at V
GS
= ± 12 V
I
GSS
–
–
–
± 100
–
nA
A
On state drain current
at -V
GS
= 10 V,V
DS
= 5 V
-I
D(ON)
27
Drain-Source On-State Resistance
at -V
GS
= 10 V, -I
D
= 4 A
at -V
GS
= 4.5 V, -I
D
= 3.7 A
at -V
GS
= 2.5 V, -I
D
= 2 A
–
–
–
–
–
–
50
60
85
R
DS(on)
m
Ω
Forward Transconductance
at -V
DS
= 5 V, -I
D
= 4 A
│
g
FS
│
–
17
–
–
S
V
Diode Forward Voltage
at I
S
= 1 A, V
GS
= 0 V
-V
SD
0.7
1
Maximun Body-Diode Continuous Current
Pulsed Body-Diode Current
1)
-I
S
–
–
–
–
2
A
A
-I
SM
27
Input Capacitance
at V
GS
= 0 V, -V
DS
= 15 V f = 1 MHz
C
iss
C
oss
C
rss
t
on
–
–
–
–
–
–
–
645
80
55
6.5
3.5
41
9
–
–
–
–
–
–
–
pF
pF
pF
ns
ns
ns
ns
Output Capacitance
at V
GS
= 0 V, -V
DS
= 15 V f = 1 MHz
Reverse Transfer Capacitance
at V
GS
= 0 V, -V
DS
= 15 V f = 1 MHz
Turn-On Delay Time
at -V
GS
= 10 V, -V
DS
= 15 V, R
L
= 3.75
Ω
,R
G
= 3
Ω
Turn-On Rise Time
at -V
GS
= 10 V, -V
DS
= 15 V, R
L
= 3.75
Ω
,R
G
= 3
Ω
t
r
Turn-Off Delay Time
at -V
GS
= 10 V, -V
DS
= 15 V, R
L
= 3.75
Ω
,R
G
= 3
Ω
t
off
Turn-Off Fall Time
at -V
GS
= 10 V, -V
DS
= 15 V, R
L
= 3.75
Ω
,R
G
= 3
Ω
t
off
1)
The power dissipation P
D
is based on T
J(MAX)
= 150
℃
.using
≤
10 s Junction to ambient thermal resistance.
SEMTECH ELECTRONICS LTD.
®
Dated: 16/03/2015
Rev: 01
CL
MMFTP3401
SEMTECH ELECTRONICS LTD.
®
Dated: 16/03/2015
Rev: 01
CL
