ST-Semtech-MMFTP84K
| Part # | ST-Semtech-MMFTP84K |
Download  | ST-Semtech-MMFTP84K |
MMFTP84K
P-Channel Enhancement Mode MOSFET
Drain
Features
• ESD protection
Gate
1. Gate 2. Source 3. Drain
Applications
Source
SOT-23
Plastic Package
• Portable appliances
Absolute Maximum Ratings (at T
a
= 25
℃
unless otherwise specified)
Parameter
Symbol
-V
DS
V
GS
Value
60
Unit
V
Drain-Source Voltage
Gate-Source Voltage
± 20
180
700
225
V
Continuous Drain Current
Peak Drain Current, Pulsed
1)
Power Dissipation
2)
mA
mA
mW
-I
D
-I
DM
P
D
556
2)
Thermal Resistance from Junction to Ambient
R
θ
JA
℃
/W
265
3)
Operating Junction Temperature Range
Storage Temperature Range
1)
Pulse Test: Pulse Width
≤
100
μ
s, Duty Cycle
≤
2%,Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C.
2)
Device mounted on FR-4 substrate PC board, with minimum recommended pad layout.
T
j
– 55 to + 150
– 55 to + 150
℃
℃
T
stg
3)
Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
1 / 6
®
Dated: 18/07/2020 Rev : 05
MMFTP84K
Characteristics at T
a
= 25
℃
unless otherwise specified
Parameter
Symbol
Min.
60
Typ.
–
Max.
–
Unit
STATIC PARAMETERS
Drain-Source Breakdown Voltage
at -I
D
= 250 µA
-V
(BR)DSS
V
Zero Gate Voltage Drain Current
at -V
DS
= 25 V
at -V
DS
= 60 V
–
–
-I
DSS
–
–
0.1
1
µA
Gate-Source Leakage
at V
GS
= ± 20 V
I
GSS
–
0.9
–
–
–
± 10
2
µA
V
Gate-Source Threshold Voltage
at V
DS
= V
GS
, -I
D
= 250 µA
-V
GS(th)
R
DS(on)
Drain-Source On-State Resistance
at -V
GS
= 5 V, -I
D
= 0.1 A
2.6
10
Ω
DYNAMIC PARAMETERS
Forward Transconductance
at -V
DS
= 25 V, -I
D
= 0.1 A, f = 1KHz
gfs
C
iss
C
oss
C
rss
Q
g
50
–
–
–
–
–
–
–
–
–
–
–
–
–
mS
pF
pF
pF
nC
Input Capacitance
at V
GS
= 0 V, -V
DS
= 30 V, f = 1 MHz
38
9
Output Capacitance
at V
GS
= 0 V, -V
DS
= 30 V, f = 1 MHz
–
Reverse Transfer Capacitance
at V
GS
= 0 V, -V
DS
= 30 V, f = 1 MHz
–
6
Total Gate Charge
at -V
DS
= 25 V, -V
GS
= 4.5 V, -I
D
= 0.1 A
–
1.1
0.3
0.2
14
4
Gate Source Charge
at -V
DS
= 25 V, -V
GS
= 4.5 V, -I
D
= 0.1 A
Q
gs
Q
gd
t
d(on)
t
r
–
nC
Gate Drain Charge
at -V
DS
= 25 V, -V
GS
= 4.5 V, -I
D
= 0.1 A
–
nC
ns
Turn-On Rise Time
at -V
DS
= 25 V, -V
GS
= 10 V, -I
D
= 0.1 A, R
g
= 6.8
Ω
–
Turn-On Rise Time
at -V
DS
= 25 V, -V
GS
= 10 V, -I
D
= 0.1 A, R
g
= 6.8
Ω
–
ns
ns
ns
Turn-Off Delay Time
at -V
DS
= 25 V, -V
GS
= 10 V, -I
D
= 0.1 A, R
g
= 6.8
Ω
t
d(off)
t
f
–
15
77
Turn-Off Fall Time
at -V
DS
= 25 V, -V
GS
= 10 V, -I
D
= 0.1 A, R
g
= 6.8
Ω
–
Body-Diode PARAMETERS
Drain-Source Diode Forward Voltage
at -I
S
= 0.5 A
Body Diode Reverse Recovery Time
at -I
F
= 0.1 A, di/dt = 100 A / µs
-V
SD
t
rr
–
–
–
–
1.2
V
60
58
–
–
ns
nC
Body Diode Reverse Recovery Charge
at -I
F
= 0.1 A, di/dt = 100 A / µs
Q
rr
2 / 6
®
Dated: 18/07/2020 Rev : 05
MMFTP84K
Electrical Characteristics Curves
Fig. 1 Typical Output Characteristic
Fig. 2 Typical Transfer Characteristic
Fig. 4 on-Resistance vs.T
j
Fig. 3 on-Resistance vs. Gate Voltage
Fig. 6 Typical Forward Characteristic
Fig. 5 On-Resistance vs. Drain Current
3 / 6
®
Dated: 18/07/2020 Rev : 05
MMFTP84K
Electrical Characteristics Curves
Fig. 8 Gate Threshold Variation vs. T
j
Fig. 7 V
(BR)DSS
vs. Junction Temperature
Fig. 9 Typical Junction Capacitance
Fig. 10 Gate Charge
Q
g
, Total Gate Charge (nC)
Fig. 11 Drain-Source Leakage Current vs. T
j
4 / 6
®
Dated: 18/07/2020 Rev : 05
MMFTP84K
Test Circuits
Fig.1-2 Switching Waveform
Fig.1-1 Switching times test circuit
Fig.2-2 Gate charge waveform
Fig.2-1 Gate charge test circuit
5 / 6
®
Dated: 18/07/2020 Rev : 05
MMFTP84K
PACKAGE OUTLINE
Plastic surface mounted package (Dimensions in mm)
SOT-23
Recommended Soldering Footprint
0.8
0.8
1.9
Packing information
Pitch
Reel Size
Tape Width
Package
Per Reel Packing Quantity
3,000
(mm)
mm
inch
mm
178
inch
7
SOT-23
8
4 ± 0.1
0.157 ± 0.004
Marking information
” VY ” = Part No.
“YM” = Date Code Marking
“Y” = Year
VY
“M” = Month
Font type: Arial
6 / 6
®
Dated: 18/07/2020 Rev : 05
