ST-Semtech-MPSA92

MPSA92 / 93  

PNP Silicon Expitaxial Planar Transistor  

for high voltage switching and amplifier applications.  

As complementary type the NPN transistor  

MPSA42 and MPSA 43 are recommended.  

On special request, these transistors can be  

manufactured in different pin configurations.  

1. Emitter 2. Base 3. Collector  

TO-92 Plastic Package  

O

Absolute Maximum Ratings (T

a

= 25

 

C)  

Parameter  

Symbol  

-V

CBO  

Value  

Unit  

V

Collector Base Voltage  

MPSA92  

300  

200  

300  

200  

MPSA93  

MPSA92  

MPSA93  

Collector Emitter Voltage  

-V

CEO  

V

Emitter Base Voltage  

Collector Current  

-V

EBO  

-I

C  

5

500  

V

mA  

mW  

Power Dissipation  

P

tot  

T

j  

625  

O

C

Junction Temperature  

Storage Temperature Range  

150  

O

C

T

stg  

– 55 to + 150  

O

Characteristics at T

a

= 25

 

C  

Parameter  

Symbol  

Min.  

Max.  

Unit  

DC Current Gain  

at -I

C

= 1 mA, -V

CE

= 10 V  

at -I

C

= 10 mA, -V

CE

= 10 V  

at -I

C

= 30 mA, -V

CE

= 10 V  

Collector Base Cutoff Current  

at -V

CB

= 200 V  

h

FE  

h

FE  

h

FE  

25  

40  

25  

–

–

–

–

–

–

MPSA92  

MPSA93  

-I

CBO  

-I

CBO  

–

–

0.25  

0.25  

µA  

µA  

at -V

CB

= 160 V  

Emitter Base Cutoff Current  

at -V

EB

= 3 V  

-I

EBO  

–

0.1  

µA  

Collector Base Breakdown Voltage  

at -I

C

= 100 µA  

MPSA92  

MPSA93  

-V

(BR)CBO  

-V

(BR)CBO  

300  

200  

–

–

V

V

Collector Emitter Breakdown Voltage  

at -I

C

= 1 mA  

MPSA92  

MPSA93  

-V

(BR)CEO  

-V

(BR)CEO  

300  

200  

–

–

V

V

Emitter Base Breakdown Voltage  

at -I

E

= 100 µA  

-V

(BR)EBO  

-V

CE(sat)  

-V

BE(sat)  

f

T  

5

–

–

V

V

Collector Emitter Saturation Voltage  

at -I

C

= 20 mA, -I

B

= 2 mA  

0.5  

0.9  

–

Base Emitter Saturation Voltage  

at -I

C

= 20 mA, -I

B

= 2 mA  

–

V

Gain Bandwidth Product  

at -I

C

= 10 mA, -V

CE

= 20 V, f = 100 MHz  

50  

MHz  

Collector Output Capacitance  

at -V

CB

= 20 V, f = 1 MHz  

MPSA92  

MPSA93  

C

ob  

C

ob  

–

–

6

8

pF  

pF  

SEMTECH ELECTRONICS LTD.  

Subsidiary of Sino-Tech International (BVI) Limited  

®

Dated : 16/06/2004  

MPSA92 / 93  

300  

T

J

=+125°C  

V

CE

=10V  

250  

200  

150  

100  

T

J

=25°C  

T

J

=-55°C  

50  

0

0.1  

1.0  

10  

100  

I

C

, Collector

 

Current (mA)  

Figure 1.

 

DC Current Gain  

1

50  

1

30  

1

10  

100  

C

ib

@ 1MHz  

10  

1

9

0  

7

0  

5

0  

V

CE

=20V  

f=20MHz  

T

J

=25°C  

C

cb

@ 1MHz  

3

0  

0.1  

10  

1000  

0.1  

1

10  

100  

1

3

5

7

9

11  

13  

15  

17  

19  

21  

Ic, Collector Current (mA)  

Figure 3. Current-Gain-Bandwidth  

V

R

, Reverse Voltage

 

(volts)  

Figure 2. Capacitance  

SEMTECH ELECTRONICS LTD.  

Subsidiary of Sino-Tech International (BVI) Limited  

®

Dated : 16/06/2004