STANSON-Tech–ST13P10
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ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
DESCRIPTION
ST13P10 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The ST13P10 has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low R
and fast switching speed.
DS(ON)
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
l
l
l
l
-100V/-13.0A, R
DS(ON)
= 130m
Ω
@V
GS
= -10V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
TO-252,TO-251 package design
PART MARKING
Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Symbo
Parameter
Drain-Source Voltage
Typical
-100
Unit
V
l
VDSS
Gate-Source Voltage
VGSS
ID
±
20
V
Continuous Drain Current
TA=25
℃
-13.0
-8.2
A
℃
(TJ=150 )
℃
TA=100
Pulsed Drain Current
IDM
IS
-52
-13
A
Continuous Source Current (Diode Conduction)
A
Power Dissipation
TA=25
℃
PD
66
W
℃
℃
Operation Junction Temperature
Storgae Temperature Range
TJ
150
TSTG
R
θ
JA
-55/150
110
Thermal Resistance-Junction to Ambient
℃
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Uni
t
Parameter
Static
Symbol
Condition
Min
Typ
Max
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=-250uA
V
DS
=V
GS
,ID=-250uA
V
DS
=0V,V
GS
=
±
20V
-100
-2.0
V
V
-4.0
±
100
Gate Leakage Current
nA
V
DS
=-100V,V
GS
=0V
V
DS
=-80V,V
GS
=0V
-25
Zero Gate Voltage
Drain Current
I
DSS
uA
A
-250
℃
T
J
=150
On-State Drain
Current
I
D(on)
-52
3.2
V
DS
≧
-10V,V
DS
=-5V
Drain-source On-
Resistance
R
DS(on)
V
GS
=-10V,I
D
=-13A
115
130 m
Ω
Forward
Transconductance
gfs
V
DS
=-50V,I
D
=-7.8A
I
S
=-7.8A,V
GS
=0V
S
Diode Forward Voltage
V
SD
-1.6
V
Dynamic
Total Gate Charge
Q
g
Q
gs
Q
gd
58
8.3
32
V
DS
=-80V,V
GS
=-10V
Gate-Source Charge
I =-8.4A
D
nC
pF
Gate-Drain Charge
Input Capacitance
C
iss
760
260
Output Capacitance
V
DS
=-25V,V
GS
=0V
F=1MHz
C
oss
Reverse
TransferCapacitance
C
rss
170
15
t
d(on)
tr
Turn-On Time
Turn-Off Time
V
GS
=-10V,V
DD
=-50V
R
D
=6.2
Ω
,R
G
=9.1
Ω
58
45
46
nS
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
TO-252-2L PACKAGE OUTLINE SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
ST13P10
P Channel Enhancement Mode MOSFET
13.0A
–
TO-251 PACKAGE OUTLINE SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright
©
2009, Stanson Corp.
ST13P10 2009.
V1
