STANSON-Tech–ST16N10
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ST16N10
N Channel Enhancement Mode MOSFET
16.0A
DESCRIPTION
ST16N10 is the N-Channel logic enhancement mode power field effect transistor which is
produced using high cell density, DMOS trench technology. The ST16N10 has been designed
specially to improve the overall efficiency of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized for low gate charge, low
R
and fast switching speed.
DS(ON)
FEATURE
PIN CONFIGURATION
TO-252
l
l
l
l
100V/16.0A, R
DS(ON)
= 140m
Ω
（
Typ
）
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252 Package design
PART MARKING
Y: Year Code
A: Date Code
B: Wafer Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Symbol
Typical
100
Unit
Drain-Source Voltage
VDSS
V
V
Gate-Source Voltage
VGSS
ID
±20
TA=25
℃
Continuous Drain Current
16.0
8.0
A
℃
(TJ=150 )
℃
TA=100
Pulsed Drain Current
IDM
IS
50
15
A
Continuous Source Current (Diode Conduction)
A
TA=25
℃
Power Dissipation
PD
79
W
℃
℃
Operation Junction Temperature
Storgae Temperature Range
TJ
150
TSTG
R
θ
JA
-55/150
110
℃
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=250mA
V
DS
=V
GS
,ID=250uA
100
1.0
V
V
2.5
±100
25
Gate Leakage Current
V
DS
=0V,V
GS
=±20V
V
DS
=100V,V
GS
=0V
V
DS
=80V,V
GS
=0V
nA
Zero Gate Voltage
Drain Current
I
DSS
uA
A
250
℃
T
J
=150
On-State Drain
Current
≧
V
DS
5V,V
GS
=10V
I
D(on)
50
Drain-source On-
Resistance
R
DS(on)
V
GS
=4.5V,I
D
=16A
140
150
1.2
m
Ω
Forward
Transconductance
gfs
V
DS
=50V,I
D
=9.0A
I
S
=9.0A,V
GS
=0V
6.4
S
V
Diode Forward Voltage
V
SD
Dynamic
Total Gate Charge
Q
g
Q
gs
Q
gd
45
7.2
22
V
DS
=80V,V
GS
=10V
Gate-Source Charge
I
D
≡
9.0A
nC
Gate-Drain Charge
Input Capacitance
C
iss
640
160
V
DS
=25V,V
GS
=0V
F=1MHz
Output Capacitance
C
oss
pF
Reverse
TransferCapacitance
C
rss
88
7.4
t
d(on)
tr
Turn-On Time
Turn-Off Time
29
40
25
V
DD
=50V,R
D
= 5.5
Ω
I
D
=9.0A,V
GEN
=10V
R
G
=12
Ω
nS
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
ST16N10
N Channel Enhancement Mode MOSFET
16.0A
TO-252-2L PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
