STANSON-Tech–ST2300
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ST2300
N Channel Enhancement Mode MOSFET
6.0A
DESCRIPTION
The ST2300 is the NꢀChannel logic enhancement mode power field effect transistor is
produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize onꢀstate resistance.These devices
are particularly suited for low voltage application such as cellular phone and notebook
computer power management and other batter powered circuits, and low inꢀline power loss
are needed in a very small outline surface mount package.
PIN CONFIGURATION
FEATURE
SOT-23-3L
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
20V/6.0A, R
DS(ON)
= 22mꢁ (Typ.)
@V
GS
= 10V
20V/5.0A, R
DS(ON)
= 36mꢁ
@V
GS
= 4.5V
20V/4.5A, R
DS(ON)
= 45mꢁ
@V
GS
= 2.5V
20V/4.0A, R
DS(ON)
= 60mꢁ
@V
GS
= 1.8V
Super high density cell design for
extremely low R
DS(ON)
Exceptional onꢀresistance and
Maximum DC current capability
SOTꢀ23ꢀ3L package design
3
D
G
1
S
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
42YA
1
2
Y: Year Code
A: Process Code
ORDERING INFORMATION
Part Number
Package
Part Marking
ST2300
SOTꢀ23ꢀ3L
42YA
※
Process Code : A ~ Z ; a ~ z
1
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
ST2300
N Channel Enhancement Mode MOSFET
6.0A
℃
ABSOULTE MAXIMUM RATINGS (Ta = 25
Unless otherwise noted )
Parameter
Symbol
V
DSS
V
GSS
I
D
Typical
Unit
DrainꢀSource Voltage
GateꢀSource Voltage
20
V
V
±
12
T
A
=25
℃
6.0
3.0
℃
Continuous Drain Current (TJ=150
)
A
℃
T
A
=70
Pulsed Drain Current
I
DM
13
A
Continuous Source Current (Diode Conduction)
Power Dissipation
I
S
1.0
A
T
A
=25
℃
1.25
0.8
P
D
W
℃
℃
℃
T
A
=70
Operation Junction Temperature
Storage Temperature Range
T
J
150
ꢀ55/150
140
T
STG
℃
R
θ
JA
/W
Thermal ResistanceꢀJunction to Ambient
2
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
ST2300
N Channel Enhancement Mode MOSFET
6.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max Unit
Static
DrainꢀSource Breakdown
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
20
V
V
Gate Threshold Voltage
0.4
1.0
±
±
V
DS
=0V,V
GS
= 20V
100
1
Gate Leakage Current
nA
V
DS
=20V,V
GS
=0V
V
DS
=20V,V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
uA
10
℃
T
J
=85
=
V
GS
10V,I
D
=6.0A
0.022
0.036
0.045
0.060
=
V
GS
4.5V,I
D
=5.0A
Ω
Drainꢀsource OnꢀResistance
R
DS(on)
V
GS
=2.5V,I
D
=4.5A
V
GS
=1.8V,I
D
=4.0A
Forward Tranconductance
Diode Forward Voltage
Dynamic
g
fs
V
DS
=15V,I
D
=5.0A
I
S
=1.7A,V
GS
=0V
30
S
V
V
SD
0.9 1.3
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Q
g
Q
gs
Q
gd
10
1.4
2.1
13
V
DS
=10V
V
GS
=4.5V
I
D
5A
nC
pF
≡
Input Capacitance
Output Capacitance
C
iss
C
oss
C
rss
600
120
100
V
DS
=10V
V
GS
=0V
F=1MH
z
Reverse Transfer Capacitance
15
40
45
30
25
60
65
40
V
DD
=10V
L
t
d(on)
TurnꢀOn Time
TurnꢀOff Time
Ω
R =10
tr
I
D
=1A
nS
V
GEN
=4.5V
t
d(off)
tf
Ω
R
G
=6
3
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
ST2300
N Channel Enhancement Mode MOSFET
6.0A
℃
TYPICAL CHARACTERICTICS
(25 Unless
noted)
4
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
ST2300
N Channel Enhancement Mode MOSFET
6.0A
TYPICAL CHARACTERICTICS
(25
℃
Unless noted)
5
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
ST2300
N Channel Enhancement Mode MOSFET
6.0A
TYPICAL CHARACTERICTICS
6
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
ST2300
N Channel Enhancement Mode MOSFET
6.0A
SOT-23-3L PACKAGE OUTLINE
7
120 Bentley Square, Mountain View, Ca 94040 USA
ST2300 2005.
V1
