STANSON-Tech–ST2304

ST2304  

N Channel Enhancement Mode MOSFET  

3.2A  

DESCRIPTION  

ST2304 is the N-Channel logic enhancement mode power field effect transistor which  

is produced using high cell density, DMOS trench technology. This high density  

process is especially tailored to minimize on-state resistance. These devices are  

particularly suited for low voltage application such as cellular phone and notebook  

computer power management, other battery powered circuits, and

 

low in-line power  

loss are required. The product is in a very small outline surface mount package.  

FEATURE  

PIN CONFIGURATION  

SOT-23-3L  

l

l

l

l

l

30V/3.2A, R

DS(ON)

= 50m-ohm (Typ.)  

@VGS = 4.5V  

30V/2.0A, R

DS(ON)

= 65m-ohm  

@VGS = 2.5V  

Super high density cell design for  

extremely low R

DS(ON)  

Exceptional on-resistance and maximum  

DC current capability  

SOT-23-3L package design  

3

D

G

S

2

1

1.Gate 2.Source 3.Drain  

PART MARKING  

SOT-23-3L  

3

04YA  

1

2

Y: Year Code

 

A: Process Code  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

ST2304 2005.

 

V1  

ST2304  

N Channel Enhancement Mode MOSFET  

3.2A  

℃

ABSOULTE MAXIMUM RATINGS

(Ta = 25

 

Unless otherwise noted )  

Parameter  

Symbol  

V

DSS  

V

GSS  

I

D  

Typical  

Unit  

V

Drain-Source Voltage  

30  

±

20  

Gate-Source Voltage  

V

T

A

=25

℃  

3.2  

2.6  

℃

Continuous Drain CurrentTJ=150

 

)  

A

℃

T

A

=70  

Pulsed Drain Current  

I

DM  

10  

A

Continuous Source Current (Diode Conduction)  

I

S  

1.25  

A

T

A

=25

℃  

1.25  

0.8  

Power Dissipation  

P

D  

W

℃

℃

℃

T

A

=70  

Operation Junction Temperature  

Storgae Temperature Range  

T

J  

150  

-55/150  

100  

T

STG  

℃

θ

/W  

R

Thermal Resistance-Junction to Ambient  

JA  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

ST2304 2005.

 

V1  

ST2304  

N Channel Enhancement Mode MOSFET  

3.2A  

℃

ELECTRICAL CHARACTERISTICS

( Ta = 25

 

Unless otherwise noted )  

Parameter  

Symbol  

Condition  

Min Typ Max

 

Unit  

Static  

Drain-Source Breakdown  

Voltage  

V

(BR)DSS  

V

GS(th)  

I

GSS  

V

GS

=0V,I

D

=250uA  

V

DS

=VGS,I

D

=250uA  

30  

V

V

Gate Threshold Voltage  

Gate Leakage Current  

1.0  

2.5  

±

±

V

DS

=0V,V

GS

= 20V  

100  

1

nA  

V

DS

=30V,V

GS

=1.0V  

V

DS

=30V,V

GS

=0V  

Zero Gate Voltage Drain  

Current  

I

DSS  

uA  

10  

℃

T

J

=55  

V

GS

=10V,I

D

=3.2A  

V

GS

=4.5V,I

D

=2.0A  

0.050 0.058  

0.065 0.075  

Ω

Drain-source On-Resistance  

Forward Transconductance  

Diode Forward Voltage  

R

DS(on)  

g

fs  

V

DS

=4.5V,I

D

=2.5V  

I

S

=1.25A,V

GS

=0V  

4.6  

S

V

V

SD  

0.82 1.0  

Dynamic  

Total Gate Charge  

Gate-Source Charge  

Q

g  

4.5  

0.8  

10  

V

DS

=15V  

V

GS

=10V  

Q

gs  

nC  

pF  

≡

I

D

2.5A  

Gate-Drain Charge  

Input Capacitance  

Q

gd  

C

iss  

C

oss  

1.0  

240  

110  

V

DS

=15V  

V

GS

=0V  

F=1MH

z  

Output Capacitance  

Reverse Transfer  

Capacitance  

C

rss  

17  

8.0  

20  

V

DD

=15V  

t

d(on)  

Turn-On Time  

Turn-Off Time  

Ω

R

L

=15  

tr  

12  

17  

30  

35  

20  

I

D

=1.0A  

V

GEN

=10V  

nS  

t

d(off)  

tf  

Ω

R

G

=6  

8.0  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

ST2304 2005.

 

V1  

ST2304  

N Channel Enhancement Mode MOSFET  

3.2A  

℃

TYPICAL CHARACTERICTICS

(25 Unless

 

noted)  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

ST2304 2005.

 

V1  

ST2304  

N Channel Enhancement Mode MOSFET  

3.2A  

℃

TYPICAL CHARACTERICTICS

(25 Unless

 

noted)  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

ST2304 2005.

 

V1  

ST2304  

N Channel Enhancement Mode MOSFET  

3.2A  

SOT-23-3L PACKAGE OUTLINE  

STANSON TECHNOLOGY  

120 Bentley Square, Mountain View, Ca 94040 USA  

ST2304 2005.

 

V1