STANSON-Tech–ST3400SRG

ST3400SRG  

N Channel Enhancement Mode MOSFET  

5.8A  

DESCRIPTION  

The ST3400SRG is the NꢀChannel logic enhancement mode power field effect transistor  

is produced using high cell density, DMOS trench technology.  

This highꢀdensity process is especially tailored to minimize onꢀstate resistance. These  

devices are particularly suited for low voltage application such as cellular phone and  

notebook computer power management and other battery powered circuits where high  

side switching

.  

FEATURE  

PIN CONFIGURATION  

SOT-23  

ꢀ

ꢀ

ꢀ

ꢀ

ꢀ

ꢀ

30V/5.8A, R

DS(ON)

= 25mꢁ (Typ.)  

@V

GS

= 10V  

30V/4.8A, R

DS(ON)

= 30mꢁ  

@V

GS

= 4.5V  

30V/4.0A, R

DS(ON)

= 40mꢁ  

@V

GS

= 2.5V  

Super high density cell design for  

extremely low R

DS(ON)  

3

D

G

S

Exceptional onꢀresistance and maximum  

DC current capability  

SOTꢀ23 package design  

1

2

1.Gate 2.Source 3.Drain  

PART MARKING  

SOT-23  

3

A0YA  

1

2

Y: Year Code

 

A: Week Code  

1

120 Bentley Square, Mountain View, Ca 94040 USA  

STN3400SRG 2009.

 

V1  

ST3400SRG  

N Channel Enhancement Mode MOSFET  

5.8A  

℃

ABSOULTE MAXIMUM RATINGS

(Ta = 25

 

Unless otherwise noted )  

Parameter  

DrainꢀSource Voltage  

GateꢀSource Voltage  

Symbol  

V

DSS  

V

GSS  

I

D  

Typical  

Unit  

30  

V

V

±

12  

T

A

=25

℃  

5.8  

3.5  

℃

Continuous Drain CurrentTJ=150

 

)  

A

℃

T

A

=70  

Pulsed Drain Current  

I

DM  

25  

A

Continuous Source Current (Diode Conduction)  

I

S  

1.7  

A

T

A

=25

℃  

2.0  

1.3  

Power Dissipation  

P

D  

W

℃

℃

℃

T

A

=70  

Operation Junction Temperature  

Storgae Temperature Range  

T

J  

150  

ꢀ55/150  

90  

T

STG  

℃

R

θ

JA  

/W  

Thermal ResistanceꢀJunction to Ambient  

2

120 Bentley Square, Mountain View, Ca 94040 USA  

STN3400SRG 2009.

 

V1  

ST3400SRG  

N Channel Enhancement Mode MOSFET  

5.8A  

℃

ELECTRICAL CHARACTERISTICS

( Ta = 25

 

Unless otherwise noted )  

Parameter  

Symbol  

Condition  

Min Typ Max  

Unit  

Static  

DrainꢀSource Breakdown  

Voltage  

V

(BR)DSS  

V

GS(th)  

I

GSS  

V

GS

=0V,I

D

=250uA  

V

DS

=VGS,I

D

=250uA  

30  

V

V

Gate Threshold Voltage  

0.5  

1.5  

±

±

100  

V

DS

=0V,V

GS

= 12V  

Gate Leakage Current  

nA  

V

DS

=24V,V

GS

=0V  

V

DS

=24V,V

GS

=0V  

1

Zero Gate Voltage Drain  

Current  

I

DSS  

uA  

10  

℃

T

J

=55  

V

GS

=10V,I

D

=5.8A  

V

GS

=4.5V,I

D

=4.8A  

V

GS

=2.5V,I

D

=4.0A  

25  

30  

40  

Ω

m

Drainꢀsource OnꢀResistance  

R

DS(on)  

Forward Transconductance  

Diode Forward Voltage  

Dynamic  

g

fs  

V

DS

=4.5V,I

D

=5.8A  

I

S

=1.7A,V

GS

=0V  

12  

S

V

SD  

1.2  

18  

V

Total Gate Charge  

GateꢀSource Charge  

GateꢀDrain Charge  

Q

g  

Q

gs  

Q

gd  

9.7  

1.6  

3.1  

V

DS

=15V  

V

GS

=10V  

nC  

pF  

≡

I

D

6.7A  

Input Capacitance  

Output Capacitance  

C

iss  

C

oss  

C

rss  

450  

240  

38  

V

DS

=15V  

V

GS

=0V  

F=1MH

z  

Reverse Transfer Capacitance  

7

15  

20  

40  

20  

V

DD

=15V  

t

d(on)  

TurnꢀOn Time  

TurnꢀOff Time  

Ω

R

L

=15  

tr  

10  

20  

11  

I

D

=1.0A  

nS  

V

GEN

=10V  

t

d(off)  

tf  

Ω

R

G

=6  

3

120 Bentley Square, Mountain View, Ca 94040 USA  

STN3400SRG 2009.

 

V1  

ST3400SRG  

N Channel Enhancement Mode MOSFET  

5.8A  

℃

TYPICAL CHARACTERICTICS

(25 Unless

 

noted)  

4

120 Bentley Square, Mountain View, Ca 94040 USA  

STN3400SRG 2009.

 

V1  

ST3400SRG  

N Channel Enhancement Mode MOSFET  

5.8A  

℃

TYPICAL CHARACTERICTICS

(25 Unless

 

noted)  

5

120 Bentley Square, Mountain View, Ca 94040 USA  

STN3400SRG 2009.

 

V1  

ST3400SRG  

N Channel Enhancement Mode MOSFET  

5.8A  

SOT-23 PACKAGE OUTLINE  

6

120 Bentley Square, Mountain View, Ca 94040 USA  

STN3400SRG 2009.

 

V1