STANSON-Tech–ST3401M23RG
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ST3401M23RG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
DESCRIPTION
ST3401M23RG is the PꢀChannel logic enhancement mode power field effect transistor
which is produced using high cell density DMOS trench technology. This high density
process is especially tailored to minimize onꢀstate resistance. These devices are
particularly suited for low voltage application such as cellular phone and notebook
computer power management, other battery powered circuits, and
low inꢀline power
loss are required. The product is in a very small outline surface mount package.
PIN CONFIGURATION
SOT-23-3L
FEATURE
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
–
30V/ꢀ4.0A, R
DS(ON)
= 53mꢁ (Typ.)
3
@V
GS
= ꢀ10V
ꢀ30V/ꢀ3.2A, R
DS(ON)
= 60mꢁ
@V
GS
= ꢀ4.5V
Super high density cell design for
Extremely low R
DS(ON)
Exceptional onꢀresistance and
maximum DC current capability
SOTꢀ23ꢀ3L package design
D
G
S
1
2
1.Gate 2.Source 3.Drain
PART MARKING
SOT-23-3L
3
A1YA
1
2
Y: Year Code
A: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
STP3401M23RG 2005.
V1
ST3401M23RG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
DrainꢀSource Voltage
GateꢀSource Voltage
Symbol
V
DSS
V
GSS
I
D
Typical
Unit
ꢀ30
V
V
±
12
T
A
=25
℃
ꢀ4.0
ꢀ3.2
℃
Continuous Drain CurrentTJ=150
)
A
℃
T
A
=70
Pulsed Drain Current
I
DM
ꢀ15
A
Continuous Source Current (Diode Conduction)
I
S
ꢀ1.0
A
T
A
=25
℃
1.25
0.8
Power Dissipation
P
D
W
℃
℃
℃
T
A
=70
Operation Junction Temperature
Storage Temperature Range
T
J
150
ꢀ55/150
120
T
STG
℃
R
θ
JA
/W
Thermal ResistanceꢀJunction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
STP3401M23RG 2005.
V1
ST3401M23RG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
DrainꢀSource Breakdown
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,I
D
=ꢀ250uA
ꢀ30
V
V
Gate Threshold Voltage
V
DS
=V ,I
D
=ꢀ250uA ꢀ0.4
ꢀ1.0
GS
±
±
V
DS
=0V,V
GS
= 12V
100
ꢀ1
Gate Leakage Current
nA
V
DS
=ꢀ24V,V
GS
=0V
V
DS
=ꢀ24V,V
GS
=0V
Zero Gate Voltage Drain
Current
I
DSS
uA
A
ꢀ10
℃
T
J
=55
≦
V
DS
ꢀ5V,V
GS
=ꢀ4.5V
OnꢀState Drain Current
I
D(on)
ꢀ10
53
60
V
GS
=ꢀ10V,I
D
=ꢀ4.0A
V
GS
=ꢀ4.5V,I
D
=ꢀ3.2A
Ω
m
Drainꢀsource OnꢀResistance
R
DS(on)
Forward Transconductance
Diode Forward Voltage
Dynamic
g
fs
V
DS
=ꢀ5V,I
D
=ꢀ4.0V
I
S
=ꢀ1.0A,V
GS
=0V
10
S
V
SD
ꢀ0.8 ꢀ1.2
V
Total Gate Charge
GateꢀSource Charge
GateꢀDrain Charge
Q
g
Q
gs
Q
gd
14
1.9
3.7
21
V
DS
=ꢀ15V
V
GS
=ꢀ10V
I
D
ꢀ4.0A
nC
pF
≡
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
C
iss
C
oss
540
131
V
DS
=ꢀ15V
V
GS
=0V
F=1MH
z
C
rss
105
10
15
31
20
15
25
50
30
V
DS
=ꢀ15V
t
d(on)
TurnꢀOn Time
TurnꢀOff Time
tr
V
GS
=ꢀ15V
I
D
=ꢀ1A
R
L
=6
nS
Ω
t
d(off)
tf
Ω
R
G
=ꢀ10
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
STP3401M23RG 2005.
V1
ST3401M23RG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
℃
TYPICAL CHARACTERICTICS
(25 Unless
noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
STP3401M23RG 2005.
V1
ST3401M23RG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
℃
TYPICAL CHARACTERICTICS
(25 Unless
noted)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
STP3401M23RG 2005.
V1
ST3401M23RG
P Channel Enhancement Mode MOSFET
ꢀ4.0A
SOT-23-3L PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
STP3401M23RG 2005.
V1
