STANSON-Tech–STN4186D
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STN4186D
N Channel Enhancement Mode MOSFET
35.0A
DESCRIPTION
STN4186D is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. The STN454D has
been designed specially to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM controllers. It has been optimized
for low gate charge, low R
and fast switching speed.
DS(ON)
FEATURE
PIN CONFIGURATION (D-PAK)
TO-252
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40V/20.0A, R
DS(ON)
= 13m
Ω
(Typ.)
@V
GS
= 10V
40V/15.0A, R
DS(ON)
= 15m
Ω
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
TO-252 package design
PART MARKING
Y: Year Code
A: Date Code
B: Wafer Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Symbol
VDSS
VGSS
IDM
Typical
40
Unit
Drain-Source Voltage
V
V
Gate-Source Voltage
±20
70
Pulsed Drain Current
A
Continuous Source Current (Diode Conduction)
IS
60
A
TA=25
℃
℃
50
25
Power Dissipation
PD
W
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
150
-55/150
60
TSTG
R
θ
JA
℃
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=250uA
V
DS
=V
GS
,ID=250uA
V
DS
=0V,V
GS
=±20V
40
V
V
1.0
2.5
Gate Leakage Current
±100
1
nA
V
DS
=40V,V
GS
=0V
V
DS
=40V,V
GS
=0V
Zero Gate Voltage
Drain Current
I
DSS
uA
5
℃
T
J
=85
Drain-source On-
Resistance
V
GS
=10V,I
D
=20A
V
GS
=4.5V,I
D
=15A
13
15
15
19
R
DS(on)
m
Ω
Forward
Transconductance
gfs
V
DS
=5V,I
D
=12A
I
S
=3.0A,V
GS
=0V
60
S
V
Diode Forward Voltage
V
SD
1.1
Dynamic
Total Gate Charge
Q
g
Q
gs
Q
gd
18
10
5
V
DS
=10V,V
DS
=20
Gate-Source Charge
I
D
≡
20A
nC
pF
Gate-Drain Charge
Input Capacitance
C
iss
1000
130
V
DS
=20V,VGS=0V
F=1MHz
Output Capacitance
C
oss
Reverse
TransferCapacitance
C
rss
85
6
12
t
d(on)
tr
Turn-On Time
Turn-Off Time
13
26
7.5
20
36
12
V
DD
=20V,R
L
= 4
Ω
I
D
=5.0A,V
GEN
=10V
R
G
=1
Ω
nS
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
GATE CHARGE TEST CIRCUIT & WAVEFORM
TESISTIVE SWITCHING TEST CIRCUIT & WAVEFORMS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
UNCLAMPED INDUCTIVE SWITCHING (UIS) TEST CIRCUIT & WAVEFORMS
DIODE TEC0VERY TEST CIRCUIT & WAVEFORMS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
STN4186D
N Channel Enhancement Mode MOSFET
35.0A
TO-252-2L PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2009, Stanson Corp.
