STANSON-Tech–STN4402
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STN4402
N Channel Enhancement Mode MOSFET
12A
DESCRIPTION
STN4402 is the N-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as power management and other
battery powered circuits where high-side switching.
FEATURE
PIN CONFIGURATION
SOP-8
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30V/12A, R
DS(ON)
= 13mΩ (Typ.)
@V
GS
= 10V
30V/10A, R
DS(ON)
= 18mΩ
@V
GS
= 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and
maximum DC current capability
SOP-8 package design
PART MARKING
SOP-8
STN4402
Y A
Y
：
Year Code
A
：
Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4402 2009.
V1
STN4402
N Channel Enhancement Mode MOSFET
12A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Symbol
Typical
30
Unit
Drain-Source Voltage
VDSS
V
V
Gate-Source Voltage
VGSS
ID
±20
TA=25
℃
℃
12
10
℃
Continuous Drain Current (TJ=150
Pulsed Drain Current
)
A
TA=70
IDM
IS
30
A
Continuous Source Current (Diode Conduction)
2.3
A
TA=25
℃
℃
2.5
1.6
Power Dissipation
PD
W
℃
℃
TA=70
Operation Junction Temperature
Storgae Temperature Range
TJ
-55/150
-55/150
80
TSTG
RθJA
℃
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4402 2009.
V1
STN4402
N Channel Enhancement Mode MOSFET
12A
ELECTRICAL CHARACTERISTICS
( Ta = 25
℃
Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=250uA
V
DS
=V
GS
,ID=250uA
30
V
V
1.0
3.0
±100
1
Gate Leakage Current
V
DS
=0V,V
GS
=±20V
V
DS
=24V,V
GS
=0V
nA
Zero Gate Voltage
Drain Current
I
DSS
V
DS
=24V,V
GS
=0V
uA
5
T
J
=85
℃
On-State Drain
Current
V
DS
≧
5V,V
GS
=10V
I
D(on)
25
A
Drain-source On-
Resistance
V
GS
=10V,I
D
=12A
V
GS
=4.5V,I
D
=10A
10
13
13
18
R
DS(on)
mΩ
Forward
Transconductance
gfs
V
DS
=15V,I
D
=6.2AV
I
S
=2.3A,V
GS
=0V
13
S
V
Diode Forward Voltage
V
SD
0.8
1.2
24
Dynamic
Total Gate Charge
Q
g
Q
gs
Q
gd
16
4.2
2.5
V
DS
=15V,V
GS
=10V
Gate-Source Charge
I
D
≡
2A
nC
pF
Gate-Drain Charge
Input Capacitance
C
iss
1350
258
Output Capacitance
V
DS
==15V,VGS=0V
F=1MHz
C
oss
Reverse
TransferCapacitance
C
rss
150
15
20
t
d(on)
tr
Turn-On Time
Turn-Off Time
6
16
40
20
V
DD
=15V,R
L
=15Ω
I
D
=5.0A,V
GEN
=-10V
R
G
=1Ω
nS
20
12
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4402 2009.
V1
STN4402
N Channel Enhancement Mode MOSFET
12A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4402 2009.
V1
STN4402
N Channel Enhancement Mode MOSFET
12A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4402 2009.
V1
STN4402
N Channel Enhancement Mode MOSFET
12A
PACKAGE OUTLINE SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4402 2009.
V1
