STANSON-Tech–STN4488L
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STN4488L
N Channel Enhancement Mode MOSFET
20.0A
DESCRIPTION
STN4488L is the NꢀChannel logic enhancement mode power field effect transistors
which are produced using high cell density DMOS trench technology. It is suitable for
the power management applications in the portable or battery powered system.
PIN CONFIGURATION
FEATURE
SOP-8
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
30V/20A, R
DS(ON)
= 3.8mꢁ (Typ.)
@VGS = 10V
30V/18A, R
DS(ON)
= 5.2mꢁ
@VGS = 4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional onꢀresistance and maximum
DC current capability
SOPꢀ8 package design
PART MARKING
SOP-8
Y:Year Code
A: Week Code
M: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
DrainꢀSource Voltage
Symbol
V
DSS
Unit
V
10 Sec
Steady state
30
GateꢀSource Voltage
V
GSS
±
V
20
20
17
15
12
Continuous Drain Current
T =25
℃
A
I
D
A
℃
(TJ=150 )
℃
T
A
=70
Pulsed Drain Current
I
DM
I
S
80
A
A
Continuous Source Current
(Diode Conduction)
3.0
3.1
20
1.7
1.1
T =25
℃
A
Power Dissipation
P
D
W
℃
T
A
=70
℃
℃
℃
Operation Junction Temperature
Storgae Temperature Range
T
J
ꢀ55/150
ꢀ55/150
T
STG
Typ
59
Max
75
Thermal ResistanceꢀJunction to Ambient
θ
JA
R
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ
Max Unit
Static
DrainꢀSource Breakdown
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,I
D
=250uA
V
DS
=V
GS
,I
D
=250uA
30
V
V
Gate Threshold Voltage
Gate Leakage Current
1.0
2.5
±
±
nA
V
DS
=0V,V
GS
= 20V
10
V
DS
=30V,V
GS
=0V
T
J
=55
1
5
Zero Gate Voltage Drain
Current
I
DSS
uA
A
℃
=5
V
DS
V,V
GS
=10V
OnꢀState Drain Current
I
D(on)
80
=
V
GS
10V, I
D
=20A
3.8
5.3
5.2
72
4.6
6.5
6.4
T
J
=125°C
Drainꢀsource OnꢀResistance
R
DS(on)
Ω
m
=
V
GS
4.5V, I
D
=18A
Forward Tran Conductance
Diode Forward Voltage
Dynamic
V
DS
=10V,I
D
=20A
I
S
=8.0A,V
GS
=0V
S
V
g
fs
V
SD
1.0
Total Gate Charge
Q
g
84
112
V
DS
=15V,V
GS
=10V
I
D
=20A
GateꢀSource Charge
Q
gs
Q
gd
12
21
nC
pF
GateꢀDrain Charge
Input Capacitance
Ciss
5450 6800
760
V
DS
=15V,V
GS
=0V
f=1MHz
Output Capacitance
Coss
Crss
Reverse TransferCapacitance
540
13
t
d(on)
TurnꢀOn Time
TurnꢀOff Time
tr
Ω
V
DS
=15V,R
L
=0.75
I
D
=1A,V
G
=10V
9.8
nS
t
d(off)
49
16
Ω
R
G
=3.0
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
STN4488L
N Channel Enhancement Mode MOSFET
20.0A
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STN4488L 2009.
V1
