STANSON-Tech–STP4407
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STP4407
P Channel Enhancement Mode MOSFET
10A
–
DESCRIPTION
The STP4407 is the P-Channel logic enhancement mode power field effect transistor
is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular
phone and notebook computer power management and other batter powered
circuits where high-side switching.
FEATURE
PIN CONFIGURATION
SOP-8
l
l
l
l
l
-30V/-10A, R
DS(ON)
= 15m
Ω
@V
GS
= -10V
-30V/-6.0A, R
DS(ON)
= 24m
Ω
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum DC
current capability
SOP-8 package design
PART MARKING
：
Y Year
Code
：
A Produce
Code
：
B Process
Code
1
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407
P Channel Enhancement Mode MOSFET
10A
–
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Parameter
Symbol
Typical
-30
Unit
Drain-Source Voltage
VDSS
V
V
Gate-Source Voltage
VGSS
ID
±20
TA=25
℃
℃
Continuous Drain Current
-10
-6
A
℃
(TJ=150 )
TA=70
Pulsed Drain Current
IDM
IS
-50
-20
A
Continuous Source Current (Diode Conduction)
A
TA=25
℃
2.5
2.0
Power Dissipation
PD
W
℃
℃
℃
TA=70
Operation Junction Temperature
Storage Temperature Range
TJ
-55/150
-55/150
50
TSTG
R
θ
JA
℃
/W
Thermal Resistance-Junction to Ambient
2
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407
P Channel Enhancement Mode MOSFET
10A
–
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Static
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=-250uA
-30
V
V
V
DS
=V
GS
,ID=-250uA -1.0
V
DS
=0V,V
GS
=±20V
-2.5
±100
Gate Leakage Current
nA
V
DS
=-30V,V
GS
=0V
V
DS
=-30V,V
GS
=0V
-1
-5
I
DSS
T
J
=55
Zero Gate Voltage
Drain Current
℃
uA
Drain-source On-
Resistance
V
GS
=-10V,I
D
=-10A
V
GS
=-4.5V,I
D
=-6.0A
15
24
20
32
R
DS(on)
m
Ω
Forward
Transconductance
gfs
V
DS
=-5V,I
D
=-10A
I
S
=-1.0A,V
GS
=0V
26
S
V
Diode Forward Voltage
V
SD
-1
Dynamic
Total Gate Charge
Q
g
Q
gs
Q
gd
C
iss
30
4.3
10
V
DS
=-15V,V
GS
=0V
f=1MHz
Gate-Source Charge
nC
pF
Gate-Drain Charge
Input Capacitance
2076 2500
400
V
DS
==-15V,VGS=0V
f=1MHz
Output Capacitance
C
oss
C
rss
Reverse
TransferCapacitance
302
10.4
t
d(on)
tr
Turn-On Time
Turn-Off Time
V
DD
=15V,R
L
=1.25
Ω
I
D
=-1A,V
GEN
=-10V
R
G
=3
Ω
24
12.6
12
nS
t
d(off)
tf
3
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407
P Channel Enhancement Mode MOSFET
10A
–
TYPICAL CHARACTERICTICS
4
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407
P Channel Enhancement Mode MOSFET
10A
–
TYPICAL CHARACTERICTICS
5
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
STP4407
P Channel Enhancement Mode MOSFET
10A
–
PACKAGE OUTLINE SOP-8P
6
120 Bentley Square, Mountain View, Ca 94040 USA
TEL: (650) 9389294
FAX: (650) 9389295
Copyright © 2007, Stanson Corp.
