STANSON-Tech–STP4435
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STP4435
P Channel Enhancement Mode MOSFET
10A
–
DESCRIPTION
STP4435 is the
P-Channel logic enhancement mode power field effect transistor
which is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application such as LCD backlight, notebook
computer power management, and other battery powered circuits.
FEATURE
PIN CONFIGURATION
SOP-8
l
l
l
l
l
-30V/-9.2A, R
DS(ON)
=-22m
Ω
(Typ.)
@V
GS
=-10V
-30V/-7.0A, R
DS(ON)
= 30m
Ω
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
：
Y Year
Code
：
A Preduce
Code
：
B Process
Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP4435
P Channel Enhancement Mode MOSFET
10A
–
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Typical
-30
Parameter
Symbol
V
DSS
V
GSS
I
D
Unit
Drain-Source Voltage
V
V
±
20
Gate-Source Voltage
T
A
=25
℃
Continuous Drain Current
-10.0
-7.0
A
℃
(TJ=150 )
℃
T
A
=70
Pulsed Drain Current
I
DM
-50
A
Continuous Source Current
(Diode Conduction)
I
S
-2.3
A
T
A
=25
℃
2.8
1.8
Power Dissipation
P
D
W
℃
℃
℃
T
A
=70
Operation Junction Temperature
Storgae Temperature Range
T
J
-55/150
-55/150
70
T
STG
℃
θ
R
JA
/W
Thermal Resistance-Junction to Ambient
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP4435
P Channel Enhancement Mode MOSFET
10A
–
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,I
D
=-250uA
-30
V
V
Gate Threshold Voltage
Gate Leakage Current
V
DS
=V
GS
,I
D
=-250 uA
-1.0
-3.0
±
±
100
V
DS
=0V,V
GS
= 20V
nA
V
DS
=-30V,V
GS
=0V
V
DS
=-30V,V
GS
=0V
-1
-5
I
DSS
T
J
=55
Zero Gate Voltage Drain
Current
℃
uA
V
GS
=-10V, I
D
=-9.2A
V
GS
=-4.5V, I
D
=-7.0
0.022 0.028
0.030 0.035
Ω
Drain-source On-Resistance
R
DS(on)
Forward Tran Conductance
Diode Forward Voltage
Dynamic
V
DS
=-10V,I
D
=-9.0A
I
S
=-2.0A,V
GS
=0V
24
S
V
g
fs
V
SD
-0.8 -1.0
Total Gate Charge
Q
g
Q
gs
Q
gd
16
2.3
4.5
24
V
DS
=-15V,V
GS
=-10V
Gate-Source Charge
≡
I
D
-9.A
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
Coss
Crss
1650
350
V
DS
=-15V,VGS=0V
f=1MHz
Output Capacitance
Reverse TransferCapacitance
235
16
17
30
30
t
d(on)
Turn-On Time
Turn-Off Time
Ω
V
DD
=15V,R
L
=15
tr
I
D
=-1.0A,V
GEN
=-10V
nS
65 110
35 80
Ω
R
G
=6
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP4435
P Channel Enhancement Mode MOSFET
10A
–
℃
TYPICAL CHARACTERICTICS
(25 Unless
Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP4435
P Channel Enhancement Mode MOSFET
10A
–
℃
TYPICAL CHARACTERICTICS
(25 Unless
Note)
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP4435
P Channel Enhancement Mode MOSFET
10A
–
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
