STANSON-Tech–STP607D
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STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
DESCRIPTION
STP607D is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP607D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low R
and fast switching speed.
DS(ON)
PIN CONFIGURATION (D-PAK)
FEATURE
TO-252
TO-251
ò
ò
ò
ò
-60V/-10.0A, R
DS(ON)
= 150mΩ
（
Typ.
）
@V
GS
= -10V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
TO-252package design
PART MARKING
Y: Year Code
A: Date Code Q: Process Code
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Symbo
Parameter
Drain-Source Voltage
Typical
-60
Unit
V
l
VDSS
Gate-Source Voltage
VGSS
ID
±20
V
Continuous Drain Current
TA=25
℃
-10.0
-6.0
A
℃
(TJ=150 )
℃
TA=100
Pulsed Drain Current
IDM
IS
-20
-12
A
Continuous Source Current (Diode Conduction)
A
Power Dissipation
TA=25
℃
PD
25
W
℃
℃
Operation Junction Temperature
Storgae Temperature Range
TJ
150
TSTG
RθJA
-55/150
20
Thermal Resistance-Junction to Ambient
℃
/W
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Uni
t
Parameter
Static
Symbol
Condition
Min
Typ
Max
Drain-Source
Breakdown Voltage
Gate Threshold
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,ID=-250uA
V
DS
=V
GS
,ID=-250uA
-60
V
V
-1.5
-3.0
±100
-1
Gate Leakage Current
V
DS
=0V,V
GS
=±20V
V
DS
=-48V,V
GS
=0V
V
DS
=-48V,V
GS
=0V
nA
Zero Gate Voltage
Drain Current
I
DSS
uA
A
-5
℃
T
J
=55
On-State Drain
Current
I
D(on)
-10
13
V
DS
≧
-10V,V
DS
=-5V
Drain-source On-
Resistance
R
DS(on)
V
GS
=-10V,I
D
=-10A
150
160 mΩ
S
Forward
Transconductance
gfs
V
DS
=-5V,I
D
=-10A
I
S
=-7.8A,V
GS
=0V
Diode Forward Voltage
V
SD
-1.0
V
Dynamic
Total Gate Charge
Q
g
Q
gs
Q
gd
16
8
V
DS
=-30V,V
GS
=-10V
Gate-Source Charge
I =-10A
D
nC
pF
Gate-Drain Charge
Input Capacitance
3.0
C
iss
1200
Output Capacitance
V
DS
=-30V,V
GS
=0V
F=1MHz
C
oss
115
7
Reverse
TransferCapacitance
C
rss
9
t
d(on)
tr
Turn-On Time
Turn-Off Time
10
25
11
V
GS
=-10V,V
DS
=-30V
R
EGN
=3Ω,R
L
=2.5Ω
nS
t
d(off)
tf
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
STP607D
P Channel Enhancement Mode MOSFET
10.0A
–
TO-252-2L PACKAGE OUTLINE SOP-8P
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
.
STP607D 2010.
V1
