STANSON-Tech–STP9527
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STP9527
P Channel Enhancement Mode MOSFET
-10.0A
suSCRIPTION
STP9527 is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. This high density
process is especially tailored to minimize on-state resistance. These devices are
particularly suited for low voltage application, noteook power management ane ther
battery powered circuits where high-side witching.
FEATURE
PIN CONFIGURATION
SOP-8
l
l
l
l
l
-40V/-10.0A, R
DS(ON)
= 32m
Ω
(Typ.)
@V
GS
=-10V
-40V/-8.0A, R
DS(ON)
= 38m
Ω
@V
GS
= -4.5V
Super high density cell design for
extremely low R
DS(ON)
Exceptional on-resistance and maximum
DC current capability
SOP-8 package design
PART MARKING
SOP-8
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
℃
ABSOULTE MAXIMUM RATINGS
(Ta = 25
Unless otherwise noted )
Typical
-40
Parameter
Symbol
V
DSS
V
GSS
I
D
Unit
Drain-Source Voltage
V
V
±
20
Gate-Source Voltage
T
A
=25
℃
℃
Continuous Drain Current
-10.0
-8.0
A
℃
(TJ=150 )
T
A
=70
Pulsed Drain Current
I
DM
-30
A
Continuous Source Current
(Diode Conduction)
I
S
-2.3
A
T
A
=25
℃
℃
2.8
1.8
Power Dissipation
P
D
W
℃
℃
T
A
=70
Operation Junction Temperature
Storgae Temperature Range
T
J
-55/150
-55/150
70
T
STG
℃
θ
R
/W
Thermal Resistance-Junction to Ambient
JA
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
℃
ELECTRICAL CHARACTERISTICS
( Ta = 25
Unless otherwise noted )
Parameter
Symbol
Condition
Min Typ Max
Unit
Static
Drain-Source Breakdown
Voltage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
=0V,I
D
=-250uA
-40
V
V
Gate Threshold Voltage
Gate Leakage Current
V
DS
=V
GS
,I
D
=-250 uA
-0.8
-2.5
±
±
100
V
DS
=0V,V
GS
= 20V
nA
V
DS
=-36V,V
GS
=0V
V
DS
=-36V,V
GS
=0V
-1
Zero Gate Voltage Drain
Current
I
DSS
uA
-10
℃
T
J
=85
On-State Drain Current
I
D(on)
V
DS=-
5V,V
GS
=4.5
-10
A
V
GS
=-10V, I
D
=-10A
V
GS
=-4.5V, I
D
=-8A
0.032 0.040
0.038 0.050
Ω
Drain-source On-Resistance
Forward Tran Conductance
Diode Forward Voltage
Dynamic
R
DS(on)
V
DS
=-15V,I
D
=-5.7A
I
S
=-2.3A,V
GS
=0V
13
S
V
g
fs
V
SD
-0.8 -1.2
Total Gate Charge
Q
g
Q
gs
Q
gd
13
4.5
6.5
20
V
DS
=-20V,V
GS
=-4.5
Gate-Source Charge
≡
I
D
-5.0A
nC
pF
Gate-Drain Charge
Input Capacitance
Ciss
Coss
Crss
1100
145
115
40
V
DS
=-20V,VGS=0V
Output Capacitance
f=1MHz
Reverse TransferCapacitance
80
t
d(on)
tr
Turn-On Time
Turn-Off Time
Ω
V
DD
=20V,R
L
=4
55
30
12
100
60
I
D
=-5.0A,V
GEN
=-4.5
nS
Ω
R
G
=1
t
d(off)
tf
20
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
TYPICAL CHARACTERICTICS
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
STP9527
P Channel Enhancement Mode MOSFET
-10.0A
SOP-8 PACKAGE OUTLINE
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
Copyright © 2007, Stanson Corp.
STP9527 2007.
V1
