STMicroelectronics-2SD882
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2SD882
NPN medium power transistor
Features
■
High current
■
Low saturation voltage
■
Complement to 2SB772
Applications
1
■
Voltage regulation
■
Relay driver
2
3
SO
T
–
32
(TO-126)
■
Generic switch
■
Audio power amplifier
■
DC-DC converter
Figure 1.
Internal schematic diagram
Description
The device is a NPN transistor manufactured by
using planar technology resulting in rugged high
performance devices. The complementary PNP
type is 2SB772.
Table 1.
Order code
2SD882
Device summary
Marking
Package
SO
T
–
32
Packing
D882
T
u
be
October 2007
Rev 3
1/8
8
Absolute maximum ratings
2SD882
1
Absolute maximum ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Collector-base voltage (I
C
= 0)
Collector current
60
V
V
30
5
V
3
A
I
CM
Collector peak current (t
P
< 5ms)
Base current
6
A
I
B
1
2
A
I
BM
Base peak current (t
P
< 5ms)
T
o
tal dissipation at T
c
= 25°C
Storage temperature
A
P
TOT
T
STG
T
J
12.5
W
°C
°C
-65 to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
R
thJ-case
Thermal resistance junction-case max
10
°C/W
2/8
2SD882
Electrical characteristics
2
Electrical characteristics
(T
= 25°C; unless otherwise specified)
CASE
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
V
CE
= 60 V
Min. Typ. Max. Unit
Collector cut-off current
I
CES
I
CEO
I
EBO
10
100
10
µA
µA
µA
(V
BE
= 0)
Collector cut-off current
(I
B
= 0)
V
CE
= 30 V
Emitter cut-off current
(I
C
= 0)
V
EB
= 5 V
Collector-emitter breakdown
voltage
V
(BR)CEO
I
C
= 10 mA
30
60
5
V
V
V
(1)
(I
B
= 0 )
Collector-base breakdown
voltage
V
(BR)CBO
I
C
= 100 µA
I
E
= 100 µA
(I
E
= 0 )
Emitter-base breakdown
voltage
V
(BR)EBO
(I
C
= 0 )
I
C
= 1 A
I
C
= 2 A
I
C
= 3 A
I
B
= 50 mA
I
B
= 100 mA
I
B
= 150 mA
0.4
0.7
1.1
V
V
V
V
CE(sat)
Collector-emitter saturation
voltage
(1)
V
BE(sat)
Base-emitter saturation
voltage
I
C
= 2 A
I
B
= 100 mA
1.2
V
(1)
I
C
= 100 mA
I
C
= 1 A
V
CE
= 2 V
100
300
h
FE
DC current gain
V
CE
= 2 V
V
CE
= 2 V
80
30
I
C
= 3 A
f
T
T
r
ansition frequency
I
C
= 0.1 A
V
CE
= 10 V
100
MHz
1. Pulsed
duration = 300 ms, duty cycle
≤
1.5%.
3/8
Electrical characteristics
2SD882
2.1
Typical characteristics (curves)
Figure 2.
Reverse biased safe operating area
Figure 3.
DC current gain
Figure 4.
Collector-emitter saturation voltage
Figure 5.
Base-emitter saturation voltage
4/8
2SD882
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
5/8
Package mechanical data
2SD882
SOT-32 (TO-126) mechanical data
mm.
DIM.
MIN.
TYP
MAX.
A
B
2.4
0.64
0.39
10.5
7.4
2.9
0.88
0.63
11.05
7.8
B1
D
E
e
2.04
4.07
15.3
2.9
2.29
4.58
2.54
5.08
16
e1
L
P
3.2
Q
Q1
H2
I
3
.
8
1
1.52
2.15
2
.
1
7
0016114E
6/8
2SD882
Revision history
4
Revision history
Table 5.
Date
Document revision history
Revision
Changes
Final datasheet. New template
Updated mechanical data
09-Sep-2005
02-Oct-2007
2
3
7/8
2SD882
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