STMicroelectronics-2ST501T
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2ST501T
HIGH VOLTAGE NPN POWER TRANSISTOR
n
HIGH VOLTAGE SPECIAL DARLINGTON
Figure 1: Package
STRUCTURE
n
n
VERY RUGGED BIPOLAR TECHNOLOGY
HIGH OPERATION JUNCTION
TEMPERATURE
n
HIGH DC CURRENT GAIN
APPLICATIONS
3
n
DRIVER FOR SOLENOID, RELAY AND
2
MOTOR
1
TO-220
DESCRIPTION
The 2ST501T is a High Voltage NPN silicon
transistor in monolithic special Darlington
configuration mounted in Jedec TO-220 plastic
package.
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Part Number
Marking
Package
Packaging
2ST501T
2ST501T
TO-220
TUBE
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
V
Collector-Emitter Voltage
(V =
0)
500
350
V
V
CES
BE
V
Collector-Emitter Voltage (I
= 0)
CEO
B
V
Emitter-Base Voltage (I
= 0)
5
V
EBO
C
I
Collector Current
Collector Peak Current (t
< 5ms)
4
8
A
A
C
I
CM
p
I
Base Current
0.5
A
B
I
Base Peak Current (t
< 5ms)
2.5
A
BM
p
o
P
100
W
°C
°C
T
o
tal Dissipation at T
= 25
C
tot
C
T
T
Storage
T
e
mperature
Max. Operating Junction
T
e
mperature
-65 to 150
150
stg
J
Rev. 1
February 2005
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2ST501T
Table 3: Thermal Data
o
R
Thermal Resistance Junction-Case
Max
1.25
thj-case
C/W
o
Table 4: Electrical Characteristics (T
= 25
C unless otherwise specified)
case
Symbol
Parameter
Collector Cut-off Current
V =
500 V
Test Conditions
Min.
Typ.
Max.
100
Unit
m
A
I
CES
CE
(I =
0)
500
m
A
o
E
V
= 500 V
T
T
= 125
C
CE
case
case
I
Collector Cut-off Current
V =
350 V
100
500
m
A
m
A
CEO
CE
(I =
0)
o
B
V
V
= 350 V
= 5 V
= 125
C
CE
EB
I
Emitter Cut-off Current
10
m
A
EBO
(I =
0)
C
V
* Collector-Emitter
I
= 10 mA
L = 10 mH
350
V
CEO(sus)
C
Sustaining Voltage
(I =
0 )
B
V
*
Collector-Emitter
I
= 2 A
I =
2 mA
1.5
2
V
V
CE(sat)
C
B
Saturation Voltage
V
*
Base-Emitter Saturation
I =
2 A
I =
2 mA
B
BE(sat)
C
Voltage
h
DC Current Gain
INDUCTIVE LOAD
Storage Time
Fall Time
I
V
= 2 A
V =
2 V
CE
2000
FE
C
= 12 V
V
= 250 V
clamp
CC
t
15
1.5
m
s
m
s
s
L = 4 mH
I =
20 mA
I
= 2 A
C
t
f
V
= -3 V
BE
B
* Pulsed: Pulsed duration = 300
m
s, duty cycle
≤
1.5
%.
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2ST501T
Figure 3: DC Current Gain
Figure 5: DC Current Gain
Figure 4: Collector-Source On Voltage
Figure 6: Base-Source On Voltage
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2ST501T
TO-220 MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
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2ST501T
Table 5: Revision History
Version
Release Date
Change Designator
25-Feb-2005
1
First Release.
5/6
2ST501T
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners
© 2005 STMicroelectronics – All Rights Reserved
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