STMicroelectronics-2STA2121

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STMicroelectronics-2STA2121
2S
T
A
2121  
High power PNP epitaxial planar bipolar transistor  
Features  
I
High breakdown voltage V  
= -250 V  
CEO  
I
Complementary to 2STC5949  
I
Typical f = 25 MHz  
t
o
I
Fully characterized at 125
 
C  
Application  
I
Audio power amplifier  
TO-264  
Description  
The device is a PNP transistor manufactured  
using new Bi
T
–
LA (Bipolar transistor for linear  
amplifier) technology. The resulting transistor  
shows good gain linearity behaviour.  
Figure
. Internal
 
schematic diagram  
T
a
ble 1.  
Device summary  
Order code  
Marking  
Package  
Packaging  
2S
T
A
2121  
2S
T
A
2121  
TO-264  
T
u
be  
November 2008  
Rev 3  
1/8  
8

Electrical ratings  
2STA2121  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
V
V
Collector-base voltage (I
 
= 0)  
E
-250  
-250  
-6  
V
V
CBO  
CEO  
EBO  
Collector-emitter voltage (I
 
= 0)  
B
Emitter-base voltage (I
 
= 0)  
C
V
I
Collector current  
-17  
A
C
I
Collector peak current (t
 
< 5ms)  
P
-34  
A
CM  
P
T
o
tal dissipation at T
 
= 25 °C  
c
220  
W
°C  
°C  
TOT  
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 3.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
R
Thermal resistance junction-case
 
___ __
max  
0.568  
°C/W  
thj-case  
2/8  

2STA2121  
Electrical characteristics  
2
Electrical characteristics  
(T

case

= 25 °C; unless otherwise specified)  
Table 4.  
Symbol  
Electrical characteristics  
Parameter  
Test conditions  
Min. Typ. Max. Unit  
Collector cut-off current  
V
E
I
= -250 V  
CB  
-5  
-5  
µA  
CBO  
(I =
 
0)  
Emitter cut-off current  
I
V
= -6 V  
EB  
µA  
V
EBO  
(I =
 
0)  
C
Collector-emitter  
breakdown voltage (I
 
= 0)  
(1)  
(BR)CEO  
V
V
I =
 
-50 mA  
C
-250  
-250  
-6  
B
Collector-base breakdown  
voltage (I
 
= 0)  
V
I =
 
-100 µA  
C
V
(BR)CBO  
(1)  
(BR)EBO  
E
Emitter-base breakdown  
voltage (I
 
= 0)  
I =
 
-1 mA  
E
V
C
Collector-emitter saturation  
voltage  
(1)  
V
I =
 
-8 A  
C
I =
 
-800 mA  
B
-3  
V
V
CE(sat)  
(1)  
V
Base-emitter voltage  
I =
 
-7 A  
C
V
= -5 V  
-1.5  
160  
BE  
CE  
80  
35  
I =
 
-1 A  
C
V
V
= -5 V  
= -5 V  
CE  
CE  
h
DC current gain  
FE  
= -7 A  
f
T
r
ansition frequency  
I =
 
-1 A  
C
V =
 
-5 V  
CE  
25  
MHz  
T
1. Pulsed
 
duration = 300 µs, duty cycle
≤
1.5%  
3/8  

Electrical characteristics  
2STA2121  
2.1  
Electrical characteristics (curves)  
Figure 2.  
Figure 4.  
Figure 6.  
Safe operating area  
Figure 3.  
Derating curve  
Output characteristics  
Figure 5.  
D
urrent gain  
Collector-emitter saturation
 
Figure 7.  
voltage  
Base-emitter voltage  
4/8  

2STA2121  
Package mechanical data  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.  
5/8  

Package mechanical data  
2STA2121  
TO-264 Mechanical data  
mm.  
Typ  
Dim.  
Min.  
Max.  
A
A1  
b
4.
8
0  
5.20  
2.50  
3
.10  
0.
9
0  
1.0  
2.5  
1.25  
b
1  
b
2  
c
2.
8  
0.50  
25.6  
0.60  
0.
8
5  
26.4  
D
E
1
9
.
8
0  
5.15  
20.20  
5.75  
20.50  
2.70  
3
.65  
e
L
1
9
.50  
2.
3
0  
L1  
øP  
3
.55  
6/8  

2STA2121  
Revision history  
4
Revision history  
Table 5.  
Date  
Document revision history  
Revision  
Changes  
23-Nov-2007  
08-May-2008  
12-Nov-2008  
1
2
3
Initial release  
Added new graphics.  
Document status promoted from preliminary data to datasheet  
7/8  

2STA2121  
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