STMicroelectronics-2STC4467
| Part # | STMicroelectronics-2STC4467 |
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2STC4467
High power NPN epitaxial planar bipolar transistor
Features
■
High breakdown voltage V
= 120 V
CEO
■
Complementary to 2STA1694
■
Fast-switching speed
■
Typical f = 20 MHz
t
o
■
Fully characterized at 125
C
3
2
1
Applications
TO-3P
■
Audio power amplifier
Description
Figure
. Internal
schematic diagram
The device is a NPN transistor manufactured
using new Bi
T
–
LA (Bipolar transistor for linear
amplifier) technolog
y
.
T
he resulting transistor
shows good gain linearity behaviour.
T
a
ble 1.
Order code
2STC4467
Device summary
Marking
Package
Packaging
2STC4467
TO-3P
T
u
be
February 2009
Rev 3
1/8
8
Electrical ratings
2STC4467
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
V
Collector-base voltage (I
= 0)
120
120
6
V
V
CBO
E
V
Collector-emitter voltage (I
= 0)
CEO
B
V
Emitter-base voltage (I
= 0)
V
EBO
C
I
Collector current
8
16
A
C
I
Collector peak current (t
< 5 ms)
A
CM
P
P
T
o
tal dissipation at T
= 25 °C
80
W
°C
°C
TOT
c
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 3.
Symbol
Thermal data
Parameter
Thermal resistance junction-case
______________ __
m
x
Value
Unit
R
1.563
°C/W
thj-case
2/8
2STC4467
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C; unless otherwise specified)
case
T
a
ble 4.
Symbol
Electrical characteristics
Parameter
Test conditions
= 120 V
Min.
Typ.
Max.
Unit
Collector cut-off current
I
V
V
10
µA
CBO
CB
EB
(I =
0)
E
Emitter cut-off current
I
= 6 V
10
µA
EBO
(I =
0)
C
Collector-emitter breakdown
(1)
(BR)CEO
I =
50 mA
120
120
6
V
V
V
V
V
C
voltage (I
= 0)
B
Collector-base breakdown
V
I =
100 µA
(BR)CBO
C
voltage (I
= 0)
E
Emitter-base breakdown voltage
(1)
(BR)EBO
I =
1 mA
V
E
(I =
0)
C
Collector-emitter saturation
voltage
(1)
I =
3 A
I =
300 mA
B
1.5
V
C
CE(sat)
h
I =
3 A
V
V
= 4 V
DC current gain
70
140
FE
C
CE
CE
f
I =
0.5 A
= 12 V
T
r
ansition frequency
20
MHz
T
C
1. Pulsed
duration = 300 µs, duty cycle
≤
1.5%
3/8
Electrical characteristics
2STC4467
2.1 Electrical
characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Safe operating area
Figure 3.
Derating curve
Output characteristics
Figure 5.
DC curr
t gain
Collector-emitter saturation voltage
Figure 7.
Collector current vs base-emitter
voltage
4/8
2STC4467
Package mechanical data
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECO
P
A
CK® packages, depending on their level of environmental compliance. ECO
P
A
CK®
is an ST trademark.
5/8
Package mechanical data
2STC4467
TO-3P Mechanical data
mm.
TYP
DIM.
MIN.
4.6
MAX.
5
A
A1
A2
b
1.45
1.20
0.80
1.80
2.80
0.55
19.70
1.50
1.40
1
1.65
1.60
1.20
2.20
3.20
0.75
20.10
b1
b2
c
0.60
19.90
13.90
D
D1
E
15.40
15.80
E1
E2
e
13.60
9.60
5.45
20
5.15
5.75
L
19.50
20.50
L1
L2
P
3.50
18.40
18.20
3.10
18.60
3.30
Q
5
Q1
3.80
6/8
2STC4467
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