STMicroelectronics-2STN2540
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2STN2540
Low voltage fast-switching PNP power bipolar transistor
Features
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast switching speed
4
■
Surface mounting device in medium power
3
SOT-223 package
2
1
Applications
SOT-223
■
Emergency lighting
■
LED
■
CCFL drivers (back lighting)
■
Voltage regulation
■
Relay driver
Figure 1.
Internal schematic diagram
Description
The device is a
PNP transistor manufactured
using new “PB-HCD” (Power Bipolar High Current
Density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Table 1.
Order code
2STN2540
Device summary
Marking
Package
SO
T
–
223
Packaging
N2540
T
a
pe and reel
January 2008
Rev 3
1/9
9
Electrical ratings
2STN2540
1
Electrical ratings
Table 2.
Symbol
Absolute maximum rating
Parameter
Value
Unit
V
Collector-base voltage (I
= 0)
-40
-40
V
V
CBO
E
V
Collector-emitter voltage (I
= 0)
CEO
B
V
Emitter-base voltage (I
= 0)
-6
V
EBO
C
I
Collector current
-5
A
C
I
Collector peak current (t
< 5ms)
-10
A
CM
P
I
Base peak current (t
< 5ms)
-2
A
BM
P
P
T
o
tal dissipation at T
= 25 °C
1.6
W
°C
°C
tot
amb
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
(1)
Thermal resistance junction-amb
__
max
78
°C/W
R
thj-amb
1. Device
mounted on PCB area of 1cm
2
2/9
2STN2540
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
Min.
Typ. Max. Unit
Collector cut-off current
V
I
= -30 V
CB
-0.1
-0.1
µ
A
µ
A
CBO
(I =0)
E
Emitter cut-off current
I
V
= -5 V
EB
EBO
(I =0)
C
I =
-0.5 A
I =
-5 mA
-120
-180
-200
-450
mV
mV
mV
mV
-80
C
B
(1)
I =
-1 A
I =
-10 mA
-120
-140
-350
V
V
C
B
Collector-emitter
saturation voltage
CE(sat)
I =
-2 A
I =
-200 mA
C
B
I =
-5 A
I =
-500 mA
C
B
Base-emitter saturation
voltage
(1)
(1)
I =
-5 A
I =
-500 mA
-1.3
V
V
C
B
BE(sat)
V
= -2 V
I =
-2 A
Base-emitter on voltage
-1.25
V
CE
C
BE(on)
I =
-0.5 A
V
V
V
V
= -2 V
= -2 V
= -2 V
= -2 V
250
200
150
50
C
CE
CE
CE
CE
I =
-1 A
C
(1)
DC current gain
h
FE
I =
-2 A
C
I =
-5 A
C
I =
0
V
= -10 V
CB
Collector-base
capacitance
E
C
80
pF
CBO
f = 1 MHz
I =
-1 A
_
V
= -10 V
CC
C
Resistive load
T
u
rn-on time
Storage time
Fall time
t
-I =
I =
-0.1 A
75
426
62
ns
ns
ns
on
B1
B2
t
T
= 30 µs
s
p
t
f
1. Pulsed
duration = 300 µs, duty cycle
≤
1.5%
3/9
Electrical characteristics
2STN2540
2.1
Electrical characteristics (curves)
Figure 2.
Figure 4.
Figure 6.
Output characteristics
Figure 3.
DC current gain
Collector-emitter saturation
Figure 5.
voltage
Base-emitter saturation
voltage
Base-emitter on voltage
Figure 7.
Resistive load switching
times
4/9
2STN2540
Electrical characteristics
Figure 8.
Resistive load switching
times
Figure 9.
Capacitance
2.2
Test circuit
Figure 10.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Package mechanical data
2STN2540
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECO
P
A
CK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECO
P
ACK is an ST trademark.
6/9
2STN2540
Package mechanical data
S
OT-22
3
mechanical data
mm.
typ
DIM.
min.
max.
1.
8
0
0.1
A
A1
B
0.02
0.60
2.
9
0
0.24
6.
3
0
0.70
3
.00
0.26
6.50
2.
3
0
4.60
3
.50
7.00
0.
8
5
3
.15
0.
3
5
6.70
B1
c
D
e
e1
E
3
.
3
0
3
.70
7.
3
0
H
6.70
o
V
10
0046067_L
7/9
Revision history
2STN2540
4
Revision history
Table 5.
Date
Document revision history
Revision
Changes
23-Oct-2003
03-Nov-2006
14-Jan-2008
1
2
3
Initial release
Added new graphics: fig.2, fig. 7, fig.8, fig.9.
Document status promoted from preliminary data to datasheet.
8/9
2STN2540
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