STMicroelectronics-2STR2215
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2STR2215
Low voltage fast-switching PNP power transistor
Features
■
Very low collector-emitter saturation voltage
■
High current gain characteristic
■
Fast switching speed
3
■
Miniature SOT-23 plastic package for surface
2
mounting circuits
1
Applications
SOT-23
■
LED
■
Battery charger
■
Motor and relay driver
■
Voltage regulation
F
gure 1.
Internal schematic diagram
Description
The 2STR2215 is a
PNP transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technolog
y
.
T
he resulting transistor
shows exceptional high
ain performances
coupled with very low satu
ation voltage.
The complementary
PN is the 2STR1215.
Table 1.
Order code
2STR2215
Device summary
Marking
Package
SO
T
–
23
Packaging
215
T
a
pe and reel
January 2009
Rev 4
1/9
9
Electrical ratings
2STR2215
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
-15
Unit
V
V
CBO
V
CEO
V
EBO
I
C
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
-15
V
-5
V
-1.5
A
I
CM
Collector peak current (t
P
< 5 ms)
T
o
tal dissipation at
T
amb
= 25 °C
Storage temperature
-3
A
P
tot
0.5
W
°C
°C
T
stg
T
J
–
to 150
150
Max. operating junction temperature
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
(1)
Thermal resistance junction-a
__
max
250
°C/W
R
thj-amb
1. Device
mounted on PCB area of 1cm
2
2/9
2STR2215
Electrical characteristics
2
Electrical characteristics
(T
= 25 °C unless otherwise specified)
case
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
V
CB
= -15 V
Min. Typ. Max. Unit
Collector cut-off current
I
CBO
-0.1
-0.1
µA
µA
(I
E
=0)
Emitter cut-off current
(I
C
=0)
I
EBO
V
EB
= -4 V
Collector-base
breakdown voltage
V
(BR)CBO
I
C
= -100 µA
I
C
= -10 mA
-15
V
(I
E
= 0)
Collector-emitter
breakdown voltage
(1)
V
(BR)CEO
-15
-5
V
V
(I
B
= 0)
Emitter-base breakdown
voltage (I
C
= 0)
V
(BR)EBO
I
E
= -100 µA
I
C
= -100 mA
I
B
= -1 mA
-0.15
-0.25 -0.50
-0.40 -0.85
V
V
V
Collector-emitter
saturation voltage
(1)
-1 A
I
C
= -2 A
I
B
= -100 mA
I
B
= -200 mA
V
CE(sat)
Base-emitter saturation
voltage
(1)
I
C
= -1 A
I
B
= -100 mA
-0.90 -1.25
V
V
BE(sat)
I
C
= -50 mA
V
CE
= -2 V
200
200
130
80
I
C
= -500 mA
V
CE
= -2 V
280
20
560
(1)
C current gain
h
FE
I
C
= -1 A
I
C
= -2 A
V
CE
= -2 V
V
CE
= -2 V
V
CB
= -10 V
f = 1 MHz
Collector-base
capacitance (I
E
= 0)
C
CBO
pF
Resistive load
T
u
rn-on time
T
u
rn-off time
I
C
= -1.5 A
V
CC
= -10 V
I
B1
= -I
B2
= -150 mA
t
on
t
off
60
ns
ns
220
1.
Pulsed duration = 300 µs, duty cycle
≤
1.5%
3/9
Electrical characteristics
2STR2215
2.1
Electrical characteristics (curves)
Figure 2.
DC current gain
Figure 3.
Figure 5.
Figure 7.
Collector-emitter saturation voltage
Figure 4.
Base-emitter saturation voltage
Resistive load sw
ching time
Figure 6.
Resisti
e load switching
time
Capacitance
4/9
2STR2215
Electrical characteristics
2.2
Test circuit
Figure 8.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
5/9
Package mechanical data
2STR2215
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECO
P
A
CK packages,
depending on their level of environmental compliance. ECO
P
A
CK
®
ECO
P
A
CK is
an ST trademark.
6/9
2STR2215
Package mechanical data
S
OT-2
3
mechanical data
mm.
typ
DIM.
min.
0.
8
9
0
max.
1.4
A
A1
B
0.1
0.
3
0.51
0.1
8
3
.04
1.05
2.1
C
D
e
0.0
8
5
2.75
0.
8
5
1.7
e1
E
1.2
1.6
H
L
2.1
2.75
0.6
S
0.
3
5
0.65
005
33
90_H
7/9
2STR2215
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