STMicroelectronics-A2P75S12M3
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A2P75S12M3
Datasheet
ACEPACK™ 2 sixpack topology, 1200 V, 75 A trench gate field-stop IGBT
M series, soft diode and NTC
Features
•
ACEPACK™ 2 power module
DBC Cu Al
2
O
3
Cu
Sixpack topology
–
•
–
–
1200
V
,
7
5 A IGB
T
s
a
nd diodes
Soft and fast recovery diode
ACEPACK™ 2
•
Integrated NTC
Applications
•
•
•
Inverters
Industrial
Motor drives
Description
This power module is a sixpack topology in an ACEPACK™ 2 package with NTC,
integrating the advanced trench gate field-stop technologies from
STMicroelectronics. This new IGBT technology represents the best compromise
between conduction and switching loss, to maximize the efficiency of any converter
system up to 20 kHz.
Product status
Product summary
Order code
A2P75S12M3
A2P75S12M3
Marking
Package
ACEPACK™ 2
Solder contact pins
Leads type
DS11655
–
Rev 6
–
January 2019
For further information contact your local STMicroelectronics sales office.
A2P75S12M3
Electrical ratings
1
Electrical ratings
1.1
IGBT
Limiting values at T
J
= 25 °C, unless otherwise specified.
Table 1.
Absolute maximum ratings of the IGBT
Symbol
Parameter
Value
Unit
V
V
CES
Collector-emitter voltage (V
= 0)
GE
1200
75
I
Continuous collector current (T
= 100 °C)
A
C
C
Pulsed collector current (t
= 1 ms)
I
CP
150
A
p
V
Gate-emitter voltage
±20
V
GE
P
T
o
tal power dissipation of each IGBT (T
= 25 °C, T
= 175 °C)
454.5
175
W
°C
°C
TOT
C
J
T
JMAX
Maximum junction temperature
Operating junction temperature range under switching conditions
T
-40 to 150
Jop
1. Pulse
width limited by maximum junction temperature.
Table 2.
Electrical characteristics of the IGBT
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Collector-emitter
breakdown voltage
V
I =
1 mA, V
= 0 V
C GE
1200
V
(BR)CES
V
V
= 15
V
, I
=
7
5 A
1.95
2.3
6
2.3
GE
C
V
CE(sat)
Collector-emitter
saturation voltage
V
= 15 V, I
= 75 A,
GE
C
(terminal)
T =
150 ˚C
J
V
V
CE
V
GE
= V
, I
= 1 mA
GE C
Gate threshold voltage
Collector cut-off current
5
7
V
GE(th)
I
= 0
V
, V
=
1
200 V
100
µA
CES
CE
Gate-emitter leakage
current
I
V
= 0
V
, V
= ±
2
0 V
± 500
nA
GES
CE
GE
C
Input capacitance
Output capacitance
4700
350
pF
pF
ies
C
oes
V
V
= 25 V, f = 1 MHz, V
= 0 V
CE
CC
GE
Reverse transfer
capacitance
C
res
190
pF
Q
= 960 V, I
= 75 A, V
= ±15 V
T
o
tal gate charge
Turn-on delay time
Current rise time
350
198
32
nC
ns
ns
g
C
GE
t
d(on)
V
V
= 600
V
, I
=
7
5 A, R
= 10 Ω,
C G
CC
t
r
= ±15
V
,
d
i/dt = 1900 A/µs
GE
Turn-on switching
energy
E
3.59
mJ
on
DS11655
–
Rev 6
page 2/13
A2P75S12M3
Diode
Symbol
Parameter
Turn-off delay time
Current fall time
Test conditions
= 600
V
, I
=
7
5 A,
Min.
Typ.
250
159
Max.
Unit
ns
t
d(off)
V
CC
C
t
f
ns
R
= 10 Ω, V
= ±15
V
,
GE
G
Turn-off switching
energy
dv/dt = 6000 V/µs;
E
5.13
mJ
off
t
Turn-on delay time
Current rise time
200
35
ns
ns
d(on)
V
= 600
V
, I
=
7
5 A,
C
CC
t
r
R
= 10 Ω, V
= ±15
V
,
GE
G
Turn-on switching
energy
E
di/dt = 1718 A/µs, T
= 150 °C
J
6.28
mJ
on
t
Turn-off delay time
Current fall time
266
251
ns
ns
d(off)
V
= 600
V
, I
=
7
5 A,
C
CC
t
f
R
= 10 Ω, V
= ±15
V
,
GE
G
Turn-off switching
energy
E
dv/dt = 4900 V/µs, T
= 150 °C
J
7.7
mJ
µs
off
V
≤ 600
V
, V
≤
1
5
V
,
GE
CC
Short-circuit withstand
time
t
10
SC
T
Jstart
≤ 150 °C
Thermal resistance
junction-to-case
R
Each IGBT
0.30
0.60
0.33
°C/W
°C/W
THj-c
Thermal resistance
case-to-heatsink
R
THc-h
Each IGB
T
, λ
= 1 W/(m·°C)
grease
1. Including
the reverse recovery of the diode.
2. Including
the tail of the collector current.
1.2
Diode
Limiting values at T
J
= 25 °C, unless otherwise specified.
Table 3.
Absolute maximum ratings of the diode
Parameter
Symbol
Value
Unit
V
V
Repetitive peak reverse voltage
1200
75
RRM
rms
I
Continuous forward current (T
= 100 °C)
A
A
F
C
Pulsed forward current (t
= 1 ms)
I
150
p
FP
T
Maximum junction temperature
175
°C
°C
JMAX
T
Operating junction temperature range under switching conditions
-40 to 150
Jop
1. Pulse
width limited by maximum junction temperature.
DS11655
–
Rev 6
page 3/13
A2P75S12M3
NTC
Table 4.
Electrical characteristics of the diode
Symbol
Parameter
Test conditions
Min.
Typ.
2.95
2.3
Max.
Unit
I =
75 A
–
–
–
–
–
–
–
–
–
–
4.1
V
F
F
Forward voltage
V
(terminal)
I =
75 A, T
= 150 °C
F
J
t
rr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery energy
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery energy
200
6.0
ns
µC
A
I =
75 A, V
= 600 V,
F
R
Q
rr
V
= ±15
V
,
GE
I
78
rrm
di/dt = 1900 A/μs
E
2.2
mJ
ns
µC
A
rec
t
rr
500
12.5
90
I =
75 A, V
= 600 V,
F
R
Q
V
= ±15
V
,
rr
GE
I
di/dt = 1718 A/μs,
rrm
T =
150 °C
J
E
5.2
mJ
rec
Thermal resistance
junction-to-case
R
Each diode
–
–
0.55
0.75
0.60
°C/W
°C/W
THj-c
Thermal resistance case-
to-heatsink
R
THc-h
Each diode, λ
= 1 W/(m·°C)
grease
1.3
NTC
Table 5.
NTC temperature sensor, considered as stand-alone
Symbol
Parameter
Test conditions
T = 25 °C
Min.
Typ.
5
Max.
+5
Unit
kΩ
Ω
R
Resistance
Resistance
Deviation of R
B-constant
B-constant
25
R
100
T = 100 °C
493
ΔR/R
-5
%
100
B
3375
3411
K
25/50
B
K
25/80
T
Operating temperature range
-40
150
°C
Figure 1.
NTC resistance vs temperature
Figure 2.
NTC resistance vs temperature, zoom
GADG260720171142NTC
GADG260720171151NTCZ
R
R
(Ω)
(Ω)
800
max
700
10
4
600
min
10
3
500
typ
400
10
2
300
0
25
50
75
100 125
T
C
(°C)
85
90
95
100 105 110
T
C
(°C)
DS11655
–
Rev 6
page 4/13
A2P75S12M3
Package
1.4
Package
Table 6.
ACEPACK™ 2 package
Parameter
Symbol
Min.
Typ.
Max.
2500
125
Unit
V
V
Isolation voltage (AC voltage, t = 60 s)
isol
rms
T
stg
Storage temperature
-40
°C
CTI
Comparative tracking index
200
L
Stray inductance module P1 – EW loop
Module single lead resistance, terminal to chip
33.5
3.6
nH
s
R
mΩ
s
DS11655
–
Rev 6
page 5/13
A2P75S12M3
Electrical characteristics curves
2
Electrical characteristics curves
Figure 3.
IGBT output characteristics
(V
GE
= 15
V
,
t
erminal)
Figure 4.
IGBT output characteristics
(T
J
= 150 °C, terminal)
IGBT191020171345OC25
IGBT191020171348OC25
I
C
I
C
(A)
(A)
T
J
= 150 °C
19 V
11 V
125
100
75
125
100
75
17 V
13 V
15 V
9 V
T
J
= 25 °C
50
50
T
J
= 150 °C
25
0
25
0
0
1
2
3
4
V
CE
(V)
0
1
2
3
4
V
CE
(V)
Figure 5.
IGBT transfer characteristics
(V
CE
= 15
V
,
t
erminal)
Figure 6.
IGBT collector current vs case temperature
GADG160120190936CCT
I
C
(A)
IGBT191020171350OC25
I
C
(A)
140
V
CC
= 15 V
T
J
= 175 °C
125
120
100
75
100
80
T
J
= 25 °C
60
50
40
T
J
= 150 °C
25
0
20
0
0
25
50
75 100
125 150
T
C
(°C)
5
7
9
11
V
GE
(V)
DS11655
–
Rev 6
page 6/13
A2P75S12M3
Electrical characteristics curves
Figure 7.
Switching energy vs gate resistance
Figure 8.
Switching energy vs gate resistance
IGBT191020171351SLG
V
CC
= 600 V, I
C
= 75 A, V
GE
= ±15 V
(mJ)
IGBT191020171351SLG
V
CC
= 600 V, I
C
= 75 A, V
GE
= ±15 V
(mJ)
E
E
14
14
12
12
E
ON
(T
J
=25°C)
E
ON
(T
J
=25°C)
10
10
E
ON
(T
J
=150°C)
E
ON
(T
J
=150°C)
8
8
E
OFF
(T
J
=150°C)
E
OFF
(T
J
=150°C)
6
6
E
OFF
(T
J
=25°C)
E
OFF
(T
J
=25°C)
4
4
2
0
2
0
0
10
20
30
40
R
G
(Ω)
0
10
20
30
40
R
G
(Ω)
Figure 9.
IGBT reverse biased safe operating area
(RBSOA)
Figure 10.
Diode forward characteristics (terminal)
IGBT191020171401DVF
I
F
(A)
IGBT191020171358OC175
I
C
(A)
70
125
T
J
= 150 °C
100
60
50
40
30
20
10
75
T
J
= 25 °C
50
25
0
T
J
= 125 °C, V
GE
= ±15
V
,
R
G
= 10 Ω
0
0
0
1
2
3
4
V
F
(V)
300
600
900
V
CE
(V)
Figure 11.
Diode reverse recovery energy vs diode current
slope
Figure 12.
Diode reverse recovery energy vs forward
current
IGBT191020171402RRE
IGBT191020171408RRE
E
rec
(mJ)
E
rec
V
CE
= 600
V
,
V
GE
= ±15
V
,
R
G
= 10 Ω
(mJ)
V
CE
= 600
V
,
V
GE
= ±15
V
,
I
F
= 75 A
6
5.5
5
T
J
= 150 °C
4.5
3.5
2.5
T
J
= 150 °C
4
3
2
T
J
= 25 °C
1.5
0.5
1
0
T
J
= 25 °C
150
I
F
(A)
600
1000
1400
1800
di/dt (A/µs)
10 30 50 70 90
130
110
DS11655
–
Rev 6
page 7/13
A2P75S12M3
Electrical characteristics curves
Figure 13.
Diode reverse recovery energy vs gate
resistance
Figure 14.
IGBT thermal impedance
IGBT191020171416ZTH
Zth(°C/W)
IGBT191020171410RRE
V
CE
= 600
V
,
V
GE
= ±15
V
,
I
F
= 75 A
(mJ)
E
rec
Zth(typ.)JH
7
6
Zth(max.)JC
T
J
= 150 °C
5
4
3
10
-1
RC – Foster Thermal Network
JC
1
0.0306
0.0004
2
0.1563
0.0112
3
0.0897
0.0897
4
0.0518
0.4563
i
r ( C/W)
˚
i
τ
i
(s)
T
J
= 25 °C
2
RC – Foster Thermal Network
JH
1
0.0324
0.0004
2
0.1591
0.0190
3
0.4715
0.1303
4
0.2345
0.4773
i
r ( C/W)
1
0
˚
i
τ
i
(s)
10
-2
10
-3
10
-2
10
-1
10
0
t (s)
0
10
20
30
40
R
G
(Ω)
Figure 15.
Inverter diode thermal impedance
IGBT191020171415MT
Zth(°C/W)
Zth(typ.)JH
10
0
Zth(max.)JC
RC – Foster Thermal Network
JC
1
0.0580
0.0007
3
0.2865
0.0090
2
0.1661
0.0585
4
0.0857
0.3810
i
10
-1
r ( C/W)
˚
i
τ
i
(s)
RC – Foster Thermal Network
JH
1
0.0718
0.0009
2
0.2823
0.0152
3
0.6107
0.1025
4
0.3305
0.4110
i
r ( C/W)
˚
i
τ
i
(s)
10
-2
10
-3
10
-2
10
-1
10
0
t (s)
DS11655
–
Rev 6
page 8/13
A2P75S12M3
Test circuits
3
Test circuits
Figure 16.
Test circuit for inductive load switching
Figure 17.
Gate charge test circuit
A
B
A
C
E
k
L
=
1
0
0
µ
H
k
G
B
V
CC
3
.
3
µF
1000
µF
C
k
G
D
.
U
.
T
k
R
G
E
+
k
–
k
AM01505v1
AM01504v1
Figure 19.
Diode reverse recovery waveform
Figure 18.
Switching waveform
90%
10%
V
G
90%
10%
V
CE
Tr(
V
o
ff)
Tcross
25
90%
10%
I
C
Td(off)
Toff
Td(on)
Ton
Tf
Tr(Ion)
AM01506v1
DS11655
–
Rev 6
page 9/13
A2P75S12M3
Topology and pin description
4
Topology and pin description
Figure 20.
Electrical topology and pin description
P
G3
U
G1
G5
V
T1
W
G4
T2
G2
G6
E’U
E’V
E’W
EU
EV
EW
Figure 21.
Package top view with sixpack pinout
EW
G6
G4
G5
EW
EW
E’W
EV
W
W
W
EV
V
V
V
EV
G3
G1
P
P
P
P
E’V
EU
EU
EU
E’U
U
U
U
G2
T1
T2
DS11655
–
Rev 6
page 10/13
A2P75S12M3
Package information
5
Package information
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions
5.1
ACEPACK™ 2 SIXPACK solder pins package information
Figure 22.
ACEPACK™ 2 sixpack solder pins package outline (dimensions are in mm)
32.00
28.80
25.60
22.40
19.20
EW
G6
G4
G5
EW
EW
E’W
EV
W
W
W
16.00
EV
V
V
V
EV
12.80
9.60
P
P
P
P
G3
G1
E’V
EU
EU
EU
E’U
U
U
U
G2
T1
T2
6.40
3.20
0.00
3.2 BSC
□0.64±0.03
Detail A
3.5 REF x 45°
56.7±0.3
51±0.15
22.7±0.3
16.4±0.2
1.3±0.2
8.5
2.5±0.2
4.5±0.1
52.7 REF
8569722_rev4
•
•
•
The lead size includes the thickness of the lead plating material.
Dimensions do not include mold protrusion.
Package dimensions do not include any eventual metal burrs.
DS11655
–
Rev 6
page 11/13
A2P75S12M3
Revision history
Table 7.
Document revision history
Changes
Date
Revision
19-May-2016
1
Initial release.
Updated
T
a
ble 5: “Electrical characteristics of the diode”
.
24-May-2016
01-Feb-2017
2
3
Minor text changes.
Added
Figure 19: “Package top view with pinout”
and
Section 2: “Electrical characteristics
(curves)”
.
Minor text changes.
Updated Section 1: “Electrical ratings”, Section 2: “Electrical characteristics curves”, and
Section 5: “Package information”.
19-Oct-2017
4
Minor text changes.
Document status promoted from preliminary data to production data.
Removed maturity status indication from cover page.
06-Mar-2018
16-Jan-2019
5
6
Minor text changes.
Minor text changes.
DS11655
–
Rev 6
page 12/13
A2P75S12M3
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.
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DS11655
–
Rev 6
page 13/13
