STMicroelectronics-ACS108-8SN-TR

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STMicroelectronics-ACS108-8SN-TR
ACS108-8SN  
Datasheet  
0.8 A – 800 V overvoltage protected AC switch (ACS™)  
Features  
COM  
•
Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar  
technology  
•
•
•
High noise immunity against static dV/dt and IEC 61000-4-4 burst  
Needs no external protection snubber or varistor  
G
Reduces component count by up to 80% and Interfaces directly with the micro-  
controller  
COM  
OUT  
•
•
Common package tab connection supports connection of several alternating  
current switches on the same cooling pad  
SOT-223  
V

CL

gives headroom before clamping then crowbar action  
OUT  
Applications  
•
Alternating current on/off static switching in appliances and industrial control  
systems  
G
•
Driving low power high inductive or resistive loads like:  
–
–
–
relay, valve, solenoid, dispenser  
pump, fan, low power motor, door lock, air flow dumper  
lamp  
COM  
COM  
Common drive reference to connect  
to the mains  
OUT  
G
Output to connect to the load.  
Gate input to connect to the controller  
through gate resistor  
Description  
The

belongs to the AC switch range (built with A. S. D.

®

technology).  
This high performance switch can control a load of up to 0.8 A.  
Product status link  
This device switch includes an overvoltage crowbar structure to absorb the inductive  
turn-off energy, and a gate level shifter driver to separate the digital controller from  
the main switch. It is triggered with a negative gate current flowing out of the gate pin.  
Product summary  
I
0.8 A  
800 V  
10 mA  
T(RMS)  
Note:  
Note:  
®: A.S.D. is a registered trademark of STMicroelectronics  
TM: ACS is a trademark of STMicroelectronics  
V
, V  
RRM  
DRM  
I
GT  
DS12893
–
Rev 2
–
August 2019  
For further information contact your local STMicroelectronics sales office.  
 

ACS108-8SN  
Characteristics  
1
Characteristics  
Table 1.
Absolute maximum ratings (T

amb

= 25 °C, unless otherwise specified)  
Symbol  
Parameter  
Value  
Unit  
T
= 76 °C  
amb  
I
On-state rms current (full sine wave), S = 5cm²  
0.8  
A
T(RMS)  
T
= 104 °C  
tab  
t =
 
20 ms  
13  
p
Non repetitive surge peak on-state current  
T initial
 
= 25 °C, (full cycle sine wave)  
j
I
A
TSM  
t =
 
16.7 ms  
p
13.7  
2
2
2
t =
 
10 ms  
p
1.1  
I t  
I t for fuse selection  
A s  
Critical rate of rise on-state current I
 
= 2 x I
 
, tr ≤ 100 ns  
f = 120 Hz, T
 
= 125 °C  
dI/dt  
100  
A/μs  
kV  
W
G
Non repetitive line peak pulse voltage  
Average gate power dissipation  
Peak positive gate voltage  
GT  
j
V
2
PP  
P
T =
 
125 °C  
j
0.1  
10  
G(AV)  
V
T =
 
125 °C  
j
V
GM  
I
Peak gate current (t
 
= 20 μs)  
T =
 
125 °C  
j
1
A
GM  
p
T
Storage temperature range  
-40 to +150  
-30 to +125  
°C  
°C  
stg  
T
Operating junction temperature range  
j
1. according
 
to test described by standard IEC 61000-4-5, see

Table 2.
Electrical characteristics (T

j

= 25 °C, unless otherwise specified)  
Symbol  
Test conditions  
Quadrant  
II – III  
Value  
Max.  
Unit  
mA  
V
I
10  
1.0  
0.15  
10  
GT  
V
= 12
V
, R
 
=
3
3 Ω  
OUT  
L
V
Max.  
Min.  
GT  
V
V
I
= V  
, R
 
= 3.3 kΩ, T
 
= 125 °C  
II – III  
V
GD  
OUT  
DRM  
L
j
I
H
= 100 mA  
Max.  
Max.  
mA  
mA  
OUT  
I
I =
 
1.2 x I  
G GT  
25  
L
V
V
= 402
V
,
g
ate open, T
 
= 125 °C  
2000  
400  
2
OUT  
OUT  
j
dV/dt  
Min.  
V/μs  
= 536 V, gate open, T = 125 °C  
j
Without snubber (15 V/μs), T
 
= 125 °C, turn-off time ≤20 ms  
(dI/dt)c  
Min.  
Min.  
A/ms  
V
j
V
CL  
I
= 0.1 mA, t
 
= 1 ms  
850  
CL p  
1. Minimum
 
I is
 
guaranteed at 10% of I
 
max.  
GT  
GT  
DS12893
–
Rev 2  
page 2/14  
 
 

ACS108-8SN  
Characteristics  
Table 3.
Static electrical characteristics  
Test conditions  
Symbol  
Value  
1.3  
Unit  
V
V
I
= 1.1 A, t
 
= 500 μs  
T =
 
25 °C  
j
Max.  
Max.  
Max.  
TM  
p
TM  
V
T =
 
125 °C  
j
Threshold voltage  
Dynamic resistance  
0.85  
300  
2
V
TO  
R
T =
 
125 °C  
j
mΩ  
µA  
mA  
d
T =
 
25 °C  
j
I
DRM  
V
= V  
/ V  
DRM RRM  
Max.  
OUT  
I
T =
 
125 °C  
j
0.2  
RRM  
1. For
 
both polarities of OUT pin referenced to COM pin  
Table 4.
Thermal characteristics  
Parameter  
Symbol  
Max. value  
Unit  
R
Junction to tab (AC)  
Junction to ambient  
25  
60  
th(j-t)  
°C/W  
R
S = 5 cm²  
Max.  
th(j-a)  
DS12893
–
Rev 2  
page 3/14  
 

ACS108-8SN  
Characteristics (curves)  
1.1  
Characteristics (curves)  
Figure 1.
Maximum power dissipation versus rms on-state  
current  
Figure 2.
On-state rms current versus case temperature  
I

T(RMS)

(A)  
0.9  
P (W
)  
0.9  
α = 180 °  
α = 180°  
0.8  
0.8  
SOT-223  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.7  
0.6  
0.5  
0.4  
0.3  
180°  
0.2  
0.1  
0.1  
T

C

°
C  
I

T(RMS)

(
A
)  
0.0  
0.0  
0
2 5  
50  
75  
100  
125  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
Figure 3.
On-state rms current versus ambient  
temperature (free air convection)  
Figure 4.
Relative variation of thermal impedance junction  
to case versus pulse duration  
K=[Z

th(j-a)

/R

th(j-a)  

]
I

T(RMS)

(A)  
1.00  
0.10  
0.01  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
Z

th(j -a)  

°
α =180  
SOT-223  
SOT
–
223  
Single layer Printed  
circuit board FR4  
SOT
–
223  
Copper surface  
area = 5cm²  
t

P

(s)  
T
°C  
Natural convection  
a
1.0E-03  
1.0E-02  
1.0E-01  
1.0E+00  
1.0E+01  
1.0E+02  
1.0E+03  
0
25  
50  
75  
100  
125  
DS12893
–
Rev 2  
page 4/14  

ACS108-8SN  
Characteristics (curves)  
Figure 6.
Relative variation of I

GT

and V

GT

versus junction  
temperature  
Figure 5.
Relative variation of holding and latching  
current versus junction temperature  
I

H

, I

L

[
T

j

] / I

H

, I

L

[
T

j

=2
5
°
C
]  
3.0  
I

GT

, V

GT

[T

j

] / I

GT

, V

GT

,
[
T

j

=25 °C]  
3.5  
I

GT

Q2  
3.0  
2.5  
I

L  

I

GT

Q3  
2.5  
2.0  
2.0  
1.5  
1.5  
1.0  
0.5  
0.0  
I

H  

1.0  
V

GT

Q2-Q3  
0.5  
T

j

(°C)  
50  
T

j

(°C)  
0.0  
-50  
-25  
0
25  
75  
100  
125  
-50  
-25  
0
25  
50  
75  
100  
125  
Figure 7.
Surge peak on-state current versus number of  
cycles  
Figure 8.
Non repetitive surge peak on-state current for a  
sinusoidal pulse  
I
(A)  
TSM  
I
(A)  
TSM  
14  
13  
12  
11  
10  
9
1.E+03  
1.E+02  
1.E+01  
1.E+00  
1.E-01  
Sinusoidal pulse,  
< 10 ms  
t
p
t=20ms  
T initial
 
= 25 °C  
j
I

TSM  

One cycle  
Non repetitive  
T

j

initial=25 °C  
8
SOT-223  
Repetitive  

tab

= 10
4
°
C  
7
6
T
5
4
3
2
t

p

(ms)  
Number of cycles  
1
0
0.01  
0.10  
1.00  
10.00  
1
10  
100  
1000  
Figure 10.
Relative variation of critical rate of decrease of  
main current versus junction temperature  
Figure 9.
On-state characteristics (maximum values)  
I

TM

(A)  
100.00  
10.00  
1.00  
(dI/dt
)

c

[T

j

] / (dI/dt)

c

[T =125 °C]  
j
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Tj=125 °C  
T

j

max.:  
Tj=25 °C  
1.5  
V

to

= 0.85 V  
R

d

= 300 m
Ω  
T

j

(°C)  
105 115  
V

TM

(V)  
2.5  
0.10  
0.0  
0.5  
1.0  
2.0  
3.0  
3.5  
4.0  
4.5  
25  
35  
45  
55  
65  
75  
85  
95  
125  
DS12893
–
Rev 2  
page 5/14  

ACS108-8SN  
Characteristics (curves)  
Figure 11.
Relative variation of static dV/dt immunity  
versus junction temperature (typical values above 5  
kV/µs)  
Figure 12.
Relative variation of leakage current versus  
junction temperature  
[Tj=125°C;80
0
V]  
I

DRM

/I

RRM

[Tj;
V

DRM/

V

RRM

]/I

DRM

/I

RRM  

1.0E+00  
1.0E-01  
1.0E-02  
1.0E-03  
]
=125°C  
/dt
[
T  
T ] / dV  
dV/dt [  
j
j
5
4
3
2
1
0
V

D

=V

R

=536V  
V

DRM

=V

RRM

=800 V  
V

DRM

=V

RRM

=600 V  
T

j

(°C)  
T

j

(°C)  
25  
50  
75  
100  
125  
25  
50  
75  
100  
125  
Figure 13.
Relative variation of critical rate of decrease of
 
Figure 14.
Thermal resistance junction to ambient versus  
main current (di/dt)c versus (dV/dt)c  
copper surface under tab  
(dI/dt)  
(dI/dt)

c

[ (dV/dt
)

c

] / Specified  
c
5.0  
4.5  
4.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
140  
120  
100  
80  
Tj =125 °C  
Printed circuit board FR4  
copper thickness = 35 µm  
SOT-223  
60  
40  
20  
S

CU

(cm²)  
4.5  
(dV/dt
)

c

(V/µs)  
0
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
5.0  
0.1  
1.0  
10.0  
100.0  
DS12893
–
Rev 2  
page 6/14  

ACS108-8SN  
Alternating current mains switch – basic application  
2
Alternating current mains switch – basic application  
The ACS108 switch is triggered by a negative gate current flowing from the gate pin G. The switch can be driven  
directly by the digital controller through a resistor as shown in

Thanks to its overvoltage protection and turn-off commutation performance, the ACS108 switch can drive a small  
power high inductive load with neither varistor nor additional turn-off snubber.  
Figure 15.
Typical application schematic  
Lamp  
Solenoid  
Motor  
M
AC Mains  
OUT  
ACS108  
Vss  
MCU  
Vdd  
Rg = 220 Ohm  
GATE  
COM  
2.1  
Protection against overvoltage: the best choice is ACS  
In comparison with standard Triacs the ACS108 is over-voltage self-protected, as specified by the parameter V

CL  

This feature is useful in two operating conditions: in case of turn-off of very inductive load, and in case of surge  
voltage that can occur on the electrical network.  
.
2.1.1  
High inductive load switch-off: turn-off overvoltage clamping  
With high inductive and low rms current loads the rate of decrease of the current is very low. An overvoltage can  
occur when the gate current is removed and the OUT current is lower than I

H

.  

°C)

, at the end of the last conduction half-cycle, the load current decreases
①
. The load current reaches the  
holding current level I

H

②
, and the ACS turns off
③
. The water valve, as an inductive load (up to 15 H), reacts  
as a current generator and an overvoltage is created, which is clamped by the ACS
④
. The current flows through  
the ACS avalanche and decreases linearly to zero. During this time, the voltage across the switch is limited to the  
clamping voltage V

CL

. The energy stored in the inductance of the load is dissipated in the clamping section that is  
DS12893
–
Rev 2  
page 7/14  
 

ACS108-8SN  
Protection against overvoltage: the best choice is ACS  
designed for this purpose. When the energy has been dissipated, the ACS voltage falls back to the mains voltage  
value (230 V rms, 50 Hz)
⑤
.  
Figure 16.
Switching off of a high inductive load – typical clamping capability of ACS108 (T

amb

= 25 °C)  
2.1.2  
Alternating current mains transient voltage ruggedness  
The ACS108 switch is able to withstand safely the AC mains transients either by clamping the low energy spikes  
or by breaking-over when subjected to high energy shocks, even with high turn-on current rises.  

25 °C (conditions equivalent to IEC 61000-4-5 standard)

is representative of the final ACS108 application, and is  
also used to test the AC switch according to the IEC 61000-4-5 standard conditions. Thanks to the load limiting  
the current, the ACS108 switch withstands the voltage spikes up to 2 kV above the peak mains voltage. The  
protection is based on an overvoltage crowbar technology. Actually, the ACS108 breaks over safely as shown in  
The ACS108 recovers its blocking voltage capability after the surge (switch off back at the next zero crossing of  
the current).  
Such non-repetitive tests can be done 10 times on each AC mains voltage polarity.  
DS12893
–
Rev 2  
page 8/14  
 

ACS108-8SN  
Protection against overvoltage: the best choice is ACS  
Figure 17.
Overvoltage ruggedness test circuit for resistive and inductive loads, T

amb

= 25 °C (conditions  
equivalent to IEC 61000-4-5 standard)  
+ 2kV Surge generator  
Rgenerator  
Cc  
Model of the load  
Filtering unit  
R = 150 Ω
 
L = 5
 
μH  
OUT  
ACS108  
GATE  
Rg = 220 Ω  
COM  
Figure 18.
Typical current and voltage waveforms across the ACS108 (+2 kV surge, IEC 61000-4-5  
standard)  
DS12893
–
Rev 2  
page 9/14  
 
 

ACS108-8SN  
Package information  
3
Package information  
In order to meet environmental requirements, ST offers these devices in different grades of

packages,  
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product  
status are available at:

. ECOPACK is an ST trademark.  
3.1  
SOT-223 package information  
•
•
Epoxy meets UL94, V0  
Lead free plating + halogen-free molding resin  
Figure 19.
SOT-223 package outline  
V
c
A
A1  
B
e1  
D
B1  
4
2
E
H
1
3
e
DS12893
–
Rev 2  
page 10/14  

ACS108-8SN  
SOT-223 package information  
Table 5.
SOT-223 package mechanical data  
Dimensions  
Inches

Ref.  
Millimeters  
Typ.  
Min.  
Max.  
1.80  
0.10  
0.85  
3.15  
0.35  
6.70  
Min.  
Typ.  
Max.  
A
A1  
B
0.0709  
0.0039  
0.0335  
0.1240  
0.0138  
0.2638  
0.02  
0.70  
3.00  
0.26  
6.50  
2.3  
0.0008  
0.0276  
0.1181  
0.0102  
0.2559  
0.0906  
0.1811  
0.1378  
0.2756  
0.60  
2.90  
0.24  
6.30  
0.024  
0.114  
0.009  
0.248  
B1  
c
D
e
e1  
E
4.6  
3.30  
6.70  
3.50  
7.00  
3.70  
7.30  
0.130  
0.264  
0.1457  
0.2874  
H
V
10° max.  
1. Inches
 
only for reference  
Figure 20.
SOT-223 footprint (dimensions in mm)  
3.25  
1.32  
5.16  
7.80  
1.32  
2.30  
0.95  
DS12893
–
Rev 2  
page 11/14  
 

ACS108-8SN  
Ordering information  
4
Ordering information  
Figure 21.
Ordering information scheme  
ACS  
1
08 –
 
8  
S
N -TR  
AC switch series  
Number of switches  
Current  
08 = 0.8 A rms  
Voltage  
8 = 800 V  
Gate current  
S = 10 mA  
Package  
N = SOT-223  
Packing  
TR =
T
a
pe and reel
7
”
 
(
S
OT-223, 1000 pieces)  
Table 6.
Ordering information  
Order code  
Marking  
Package  
Weight  
Base qty.  
Packing mode  
ACS 108 8S

ACS108-8SN-TR  
SOT-223  
0.11 g  
1000  
T
a
pe and reel  
1. first
 
row = ACS, second row = 108, third row = 8S  
DS12893
–
Rev 2  
page 12/14  
 

ACS108-8SN  
Revision history  
Table 7.
Document revision history  
Date  
Version  
Changes  
07-Feb-2019  
08-Aug-2019  
1
2
Initial release.  
DS12893
–
Rev 2  
page 13/14  

ACS108-8SN  
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T
.
F
or additional information about ST trademarks, please refer to

. All other product or service  
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© 2019 STMicroelectronics – All rights reserved  
DS12893
–
Rev 2  
page 14/14