STMicroelectronics-ACS108-8SN-TR
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ACS108-8SN
Datasheet
0.8 A – 800 V overvoltage protected AC switch (ACS™)
Features
COM
•
Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar
technology
•
•
•
High noise immunity against static dV/dt and IEC 61000-4-4 burst
Needs no external protection snubber or varistor
G
Reduces component count by up to 80% and Interfaces directly with the micro-
controller
COM
OUT
•
•
Common package tab connection supports connection of several alternating
current switches on the same cooling pad
SOT-223
V
CL
gives headroom before clamping then crowbar action
OUT
Applications
•
Alternating current on/off static switching in appliances and industrial control
systems
G
•
Driving low power high inductive or resistive loads like:
–
–
–
relay, valve, solenoid, dispenser
pump, fan, low power motor, door lock, air flow dumper
lamp
COM
COM
Common drive reference to connect
to the mains
OUT
G
Output to connect to the load.
Gate input to connect to the controller
through gate resistor
Description
This high performance switch can control a load of up to 0.8 A.
Product status link
This device switch includes an overvoltage crowbar structure to absorb the inductive
turn-off energy, and a gate level shifter driver to separate the digital controller from
the main switch. It is triggered with a negative gate current flowing out of the gate pin.
Product summary
I
0.8 A
800 V
10 mA
T(RMS)
Note:
Note:
®: A.S.D. is a registered trademark of STMicroelectronics
TM: ACS is a trademark of STMicroelectronics
V
, V
RRM
DRM
I
GT
DS12893
–
Rev 2
–
August 2019
For further information contact your local STMicroelectronics sales office.
ACS108-8SN
Characteristics
1
Characteristics
Table 1.
Absolute maximum ratings (T
amb
= 25 °C, unless otherwise specified)
Symbol
Parameter
Value
Unit
T
= 76 °C
amb
I
On-state rms current (full sine wave), S = 5cm²
0.8
A
T(RMS)
T
= 104 °C
tab
t =
20 ms
13
p
Non repetitive surge peak on-state current
T initial
= 25 °C, (full cycle sine wave)
j
I
A
TSM
t =
16.7 ms
p
13.7
2
2
2
t =
10 ms
p
1.1
I t
I t for fuse selection
A s
Critical rate of rise on-state current I
= 2 x I
, tr ≤ 100 ns
f = 120 Hz, T
= 125 °C
dI/dt
100
A/μs
kV
W
G
Non repetitive line peak pulse voltage
Average gate power dissipation
Peak positive gate voltage
GT
j
V
2
PP
P
T =
125 °C
j
0.1
10
G(AV)
V
T =
125 °C
j
V
GM
I
Peak gate current (t
= 20 μs)
T =
125 °C
j
1
A
GM
p
T
Storage temperature range
-40 to +150
-30 to +125
°C
°C
stg
T
Operating junction temperature range
j
1. according
to test described by standard IEC 61000-4-5, see
Figure 17. Overvoltage ruggedness test circuit for resistive and
Table 2.
Electrical characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol
Test conditions
Quadrant
II – III
Value
Max.
Unit
mA
V
I
10
1.0
0.15
10
GT
V
= 12
V
, R
=
3
3 Ω
OUT
L
V
Max.
Min.
GT
V
V
I
= V
, R
= 3.3 kΩ, T
= 125 °C
II – III
V
GD
OUT
DRM
L
j
I
H
= 100 mA
Max.
Max.
mA
mA
OUT
I
I =
1.2 x I
G GT
25
L
V
V
= 402
V
,
g
ate open, T
= 125 °C
2000
400
2
OUT
OUT
j
dV/dt
Min.
V/μs
= 536 V, gate open, T = 125 °C
j
Without snubber (15 V/μs), T
= 125 °C, turn-off time ≤20 ms
(dI/dt)c
Min.
Min.
A/ms
V
j
V
CL
I
= 0.1 mA, t
= 1 ms
850
CL p
1. Minimum
I is
guaranteed at 10% of I
max.
GT
GT
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ACS108-8SN
Characteristics
Table 3.
Static electrical characteristics
Test conditions
Symbol
Value
1.3
Unit
V
V
I
= 1.1 A, t
= 500 μs
T =
25 °C
j
Max.
Max.
Max.
TM
p
TM
V
T =
125 °C
j
Threshold voltage
Dynamic resistance
0.85
300
2
V
TO
R
T =
125 °C
j
mΩ
µA
mA
d
T =
25 °C
j
I
DRM
V
= V
/ V
DRM RRM
Max.
OUT
I
T =
125 °C
j
0.2
RRM
1. For
both polarities of OUT pin referenced to COM pin
Table 4.
Thermal characteristics
Parameter
Symbol
Max. value
Unit
R
Junction to tab (AC)
Junction to ambient
25
60
th(j-t)
°C/W
R
S = 5 cm²
Max.
th(j-a)
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ACS108-8SN
Characteristics (curves)
1.1
Characteristics (curves)
Figure 1.
Maximum power dissipation versus rms on-state
current
Figure 2.
On-state rms current versus case temperature
I
T(RMS)
(A)
0.9
P (W
)
0.9
α = 180 °
α = 180°
0.8
0.8
SOT-223
0.7
0.6
0.5
0.4
0.3
0.2
0.7
0.6
0.5
0.4
0.3
180°
0.2
0.1
0.1
T
C
°
C
I
T(RMS)
(
A
)
0.0
0.0
0
2 5
50
75
100
125
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Figure 3.
On-state rms current versus ambient
temperature (free air convection)
Figure 4.
Relative variation of thermal impedance junction
to case versus pulse duration
K=[Z
th(j-a)
/R
th(j-a)
]
I
T(RMS)
(A)
1.00
0.10
0.01
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Z
th(j -a)
°
α =180
SOT-223
SOT
–
223
Single layer Printed
circuit board FR4
SOT
–
223
Copper surface
area = 5cm²
t
P
(s)
T
°C
Natural convection
a
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
1.0E+03
0
25
50
75
100
125
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–
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ACS108-8SN
Characteristics (curves)
Figure 6.
Relative variation of I
GT
and V
GT
versus junction
temperature
Figure 5.
Relative variation of holding and latching
current versus junction temperature
I
H
, I
L
[
T
j
] / I
H
, I
L
[
T
j
=2
5
°
C
]
3.0
I
GT
, V
GT
[T
j
] / I
GT
, V
GT
,
[
T
j
=25 °C]
3.5
I
GT
Q2
3.0
2.5
I
L
I
GT
Q3
2.5
2.0
2.0
1.5
1.5
1.0
0.5
0.0
I
H
1.0
V
GT
Q2-Q3
0.5
T
j
(°C)
50
T
j
(°C)
0.0
-50
-25
0
25
75
100
125
-50
-25
0
25
50
75
100
125
Figure 7.
Surge peak on-state current versus number of
cycles
Figure 8.
Non repetitive surge peak on-state current for a
sinusoidal pulse
I
(A)
TSM
I
(A)
TSM
14
13
12
11
10
9
1.E+03
1.E+02
1.E+01
1.E+00
1.E-01
Sinusoidal pulse,
< 10 ms
t
p
t=20ms
T initial
= 25 °C
j
I
TSM
One cycle
Non repetitive
T
j
initial=25 °C
8
SOT-223
Repetitive
tab
= 10
4
°
C
7
6
T
5
4
3
2
t
p
(ms)
Number of cycles
1
0
0.01
0.10
1.00
10.00
1
10
100
1000
Figure 10.
Relative variation of critical rate of decrease of
main current versus junction temperature
Figure 9.
On-state characteristics (maximum values)
I
TM
(A)
100.00
10.00
1.00
(dI/dt
)
c
[T
j
] / (dI/dt)
c
[T =125 °C]
j
2.5
2.0
1.5
1.0
0.5
0.0
Tj=125 °C
T
j
max.:
Tj=25 °C
1.5
V
to
= 0.85 V
R
d
= 300 m
Ω
T
j
(°C)
105 115
V
TM
(V)
2.5
0.10
0.0
0.5
1.0
2.0
3.0
3.5
4.0
4.5
25
35
45
55
65
75
85
95
125
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–
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ACS108-8SN
Characteristics (curves)
Figure 11.
Relative variation of static dV/dt immunity
versus junction temperature (typical values above 5
kV/µs)
Figure 12.
Relative variation of leakage current versus
junction temperature
[Tj=125°C;80
0
V]
I
DRM
/I
RRM
[Tj;
V
DRM/
V
RRM
]/I
DRM
/I
RRM
1.0E+00
1.0E-01
1.0E-02
1.0E-03
]
=125°C
/dt
[
T
T ] / dV
dV/dt [
j
j
5
4
3
2
1
0
V
D
=V
R
=536V
V
DRM
=V
RRM
=800 V
V
DRM
=V
RRM
=600 V
T
j
(°C)
T
j
(°C)
25
50
75
100
125
25
50
75
100
125
Figure 13.
Relative variation of critical rate of decrease of
Figure 14.
Thermal resistance junction to ambient versus
main current (di/dt)c versus (dV/dt)c
copper surface under tab
(dI/dt)
(dI/dt)
c
[ (dV/dt
)
c
] / Specified
c
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
140
120
100
80
Tj =125 °C
Printed circuit board FR4
copper thickness = 35 µm
SOT-223
60
40
20
S
CU
(cm²)
4.5
(dV/dt
)
c
(V/µs)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
5.0
0.1
1.0
10.0
100.0
DS12893
–
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page 6/14
ACS108-8SN
Alternating current mains switch – basic application
2
Alternating current mains switch – basic application
The ACS108 switch is triggered by a negative gate current flowing from the gate pin G. The switch can be driven
directly by the digital controller through a resistor as shown in
Figure 15. Typical application schematic
Thanks to its overvoltage protection and turn-off commutation performance, the ACS108 switch can drive a small
power high inductive load with neither varistor nor additional turn-off snubber.
Figure 15.
Typical application schematic
Lamp
Solenoid
Motor
M
AC Mains
OUT
ACS108
Vss
MCU
Vdd
Rg = 220 Ohm
GATE
COM
2.1
Protection against overvoltage: the best choice is ACS
In comparison with standard Triacs the ACS108 is over-voltage self-protected, as specified by the parameter V
CL
This feature is useful in two operating conditions: in case of turn-off of very inductive load, and in case of surge
voltage that can occur on the electrical network.
.
2.1.1
High inductive load switch-off: turn-off overvoltage clamping
With high inductive and low rms current loads the rate of decrease of the current is very low. An overvoltage can
occur when the gate current is removed and the OUT current is lower than I
H
.
As shown in
Figure 16. Switching off of a high inductive load – typical clamping capability of ACS108 (T
amb
= 25
°C)
, at the end of the last conduction half-cycle, the load current decreases
①
. The load current reaches the
holding current level I
H
②
, and the ACS turns off
③
. The water valve, as an inductive load (up to 15 H), reacts
as a current generator and an overvoltage is created, which is clamped by the ACS
④
. The current flows through
the ACS avalanche and decreases linearly to zero. During this time, the voltage across the switch is limited to the
clamping voltage V
CL
. The energy stored in the inductance of the load is dissipated in the clamping section that is
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ACS108-8SN
Protection against overvoltage: the best choice is ACS
designed for this purpose. When the energy has been dissipated, the ACS voltage falls back to the mains voltage
value (230 V rms, 50 Hz)
⑤
.
Figure 16.
Switching off of a high inductive load – typical clamping capability of ACS108 (T
amb
= 25 °C)
2.1.2
Alternating current mains transient voltage ruggedness
The ACS108 switch is able to withstand safely the AC mains transients either by clamping the low energy spikes
or by breaking-over when subjected to high energy shocks, even with high turn-on current rises.
The test circuit shown in
Figure 17. Overvoltage ruggedness test circuit for resistive and inductive loads, T
amb
25 °C (conditions equivalent to IEC 61000-4-5 standard)
is representative of the final ACS108 application, and is
also used to test the AC switch according to the IEC 61000-4-5 standard conditions. Thanks to the load limiting
the current, the ACS108 switch withstands the voltage spikes up to 2 kV above the peak mains voltage. The
protection is based on an overvoltage crowbar technology. Actually, the ACS108 breaks over safely as shown in
The ACS108 recovers its blocking voltage capability after the surge (switch off back at the next zero crossing of
the current).
Such non-repetitive tests can be done 10 times on each AC mains voltage polarity.
DS12893
–
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ACS108-8SN
Protection against overvoltage: the best choice is ACS
Figure 17.
Overvoltage ruggedness test circuit for resistive and inductive loads, T
amb
= 25 °C (conditions
equivalent to IEC 61000-4-5 standard)
+ 2kV Surge generator
Rgenerator
Cc
Model of the load
Filtering unit
R = 150 Ω
L = 5
μH
OUT
ACS108
GATE
Rg = 220 Ω
COM
Figure 18.
Typical current and voltage waveforms across the ACS108 (+2 kV surge, IEC 61000-4-5
standard)
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ACS108-8SN
Package information
3
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
3.1
SOT-223 package information
•
•
Epoxy meets UL94, V0
Lead free plating + halogen-free molding resin
Figure 19.
SOT-223 package outline
V
c
A
A1
B
e1
D
B1
4
2
E
H
1
3
e
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ACS108-8SN
SOT-223 package information
Table 5.
SOT-223 package mechanical data
Dimensions
Ref.
Millimeters
Typ.
Min.
Max.
1.80
0.10
0.85
3.15
0.35
6.70
Min.
Typ.
Max.
A
A1
B
0.0709
0.0039
0.0335
0.1240
0.0138
0.2638
0.02
0.70
3.00
0.26
6.50
2.3
0.0008
0.0276
0.1181
0.0102
0.2559
0.0906
0.1811
0.1378
0.2756
0.60
2.90
0.24
6.30
0.024
0.114
0.009
0.248
B1
c
D
e
e1
E
4.6
3.30
6.70
3.50
7.00
3.70
7.30
0.130
0.264
0.1457
0.2874
H
V
10° max.
1. Inches
only for reference
Figure 20.
SOT-223 footprint (dimensions in mm)
3.25
1.32
5.16
7.80
1.32
2.30
0.95
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ACS108-8SN
Ordering information
4
Ordering information
Figure 21.
Ordering information scheme
ACS
1
08 –
8
S
N -TR
AC switch series
Number of switches
Current
08 = 0.8 A rms
Voltage
8 = 800 V
Gate current
S = 10 mA
Package
N = SOT-223
Packing
TR =
T
a
pe and reel
7
”
(
S
OT-223, 1000 pieces)
Table 6.
Ordering information
Order code
Marking
Package
Weight
Base qty.
Packing mode
ACS108-8SN-TR
SOT-223
0.11 g
1000
T
a
pe and reel
1. first
row = ACS, second row = 108, third row = 8S
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ACS108-8SN
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T
.
F
or additional information about ST trademarks, please refer to
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. All other product or service
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Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2019 STMicroelectronics – All rights reserved
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