STMicroelectronics-BCP53-16

Part #STMicroelectronics-BCP53-16
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STMicroelectronics-BCP53-16
BCP53-16  
®
LOW POWER PNP TRANSISTOR  
Ordering Code  
Marking  
BCP53-16  
BCP5316  
■
■
SILICON EPITAXIAL PLANAR PNP MEDIUM  
VOLTAGE TRANSISTOR  
SOT-223 PLASTIC PACKAGE FOR  
SURFACE MOUNTING CIRCUITS  
TAPE AND REEL PACKING  
2
■
■
3
THE NPN COMPLEMENTARY TYPE IS  
BCP56-16  
2
1
APPLICATIONS  
SOT-223  
■
■
■
MEDIUM VOLTAGE LOAD SWITCH  
TRANSISTORS  
OUTPUT STAGE FOR AUDIO AMPLIFIERS  
CIRCUITS  
AUTOMOTIVE POST-VOLTAGE  
REGULATION  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
V

CBO  

V

CEO  

V

CER  

V

EBO  

I

C  

Parameter  
Value  
-100  
-80  
Unit  
Collector-Base Voltage (I

E

= 0)  
Collector-Emitter Voltage (I

B

= 0)  
V
V
-100  
-5  
V
Collector-Emitter Voltage (R

BE

= 1K
Ω
)  
Emitter-Base Voltage (I

C

= 0)  
Collector Current  
V
-1  
A
I

CM  

Collector Peak Current (t

p

< 5 ms)  
Base Current  
-1.5  
A
I

B  

-0.1  
A
I

BM  

Base Peak Current (t

p

< ms)  
-0.2  
A
o
P

tot  

Total Dissipation at T

amb

= 25
 
C  
1.6  
W

o

C  

o

C  
T

stg  

T

j  

Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/4  
September 2003  

BCP53-16  
THERMAL DATA  
R

thj-amb  

•
Thermal Resistance Junction-Ambient  
Max  
78  

o

C/W  
•
Device mounted on a PCB area of 1 cm

2  

ELECTRICAL CHARACTERISTICS
(T

case

= 25

o

C unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
V

CB

= -30 V  
Min.  
Typ.  
Max.  
Unit  
I

CBO  

Collector Cut-off  
Current (I

E

= 0)  
-100  
-10  
nA  
µ
A  
o
V

CB

= -30 V  
T

j

= 125
 
C  
V

(BR)CBO

Collector-Base  
Breakdown Voltage  
(I

E

= 0)  
-100  
-80  
V
V
V
V
I

C

= -100
µ
A  
V

(BR)CEO

Collector-Emitter  
Breakdown Voltage  
(I

B

= 0)  
I

C

= -20 mA  
I

C

= -100
µ
A  
I

E

= -10
µ
A  
V

(BR)CER

Collector-Emitter  
Breakdown Voltage  
(R

BE

= 1 K
Ω
)  
-100  
-5  
V

(BR)EBO

Emitter-Base  
Breakdown Voltage  
(I

C

= 0)  
V

CE(sat)  

V

BE(on)  

h

FE  

Collector-Emitter  
Saturation Voltage  
I

C

= -500 mA
 
I

B

= -50 mA  
I

C

= -500 mA
 
V

CE

= -2 V  
-0.5  
-1  
V
V
Base-Emitter On  
Voltage  
DC Current Gain  
I

C

= -5 mA  
V

CE

= -2 V  
40  
100  
25  
I

C

= -150 mA
 
V

CE

= -2 V  
I

C

= -500 mA
 
V

CE

= -2 V  
250  
f

T  

Transition Frequency  
I

C

= -10 mA
 
V

CE

= -5 V
 
f = 20 MHz  
50  
MHz  
Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
1.5 %  
2/4  

BCP53-16  
SOT-223 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
1.80  
0.80  
3.10  
0.32  
6.70  
MIN.  
MAX.  
0.071  
0.031  
0.122  
0.013  
0.264  
A
B
0.60  
2.90  
0.24  
6.30  
0.70  
3.00  
0.26  
6.50  
2.30  
4.60  
3.50  
7.00  
0.024  
0.114  
0.009  
0.248  
0.027  
0.118  
0.010  
0.256  
0.090  
0.181  
0.138  
0.276  
B1  
c
D
e
e1  
E
3.30  
6.70  
3.70  
7.30  
10

o  

0.130  
0.264  
0.146  
0.287  
10

o  

H
V
A1  
0.02  
P008B  
3/4  

BCP53-16  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics.  
All other names are the property of their respective owners.  
© 2003 STMicroelectronics – All Rights reserved  
STMicroelectronics GROUP OF COMPANIES  
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