STMicroelectronics-BD237

BD235  

BD237  

Low voltage NPN power transistors  

Features  

■

Low saturation voltage  

■

NPN transistors  

Applications  

1

■

Audio, power linear and switching applications  

2

3

SO

T

–

32  

(TO-126)  

Description  

The devices are manufactured in Planar  

technology with “Base Island” layout. The  

resulting transistor shows exceptional high gain  

performance coupled with very low saturation  

voltage. The PNP type is BD238.  

Figure 1.  

Internal schematic diagram  

Table 1.  

Device summary  

Order codes  

Marking  

Package  

SO

T

–

32  

SO

T

–

32  

Packaging  

BD235  

BD237  

BD235  

BD237  

T

u

be  

T

u

be  

June 2009  

Doc ID 4189 Rev 3  

1/9  

9

Absolute maximum ratings  

BD235, BD237  

1

Absolute maximum ratings  

Table 2.  

Symbol  

Absolute maximum ratings  

Parameter  

Value  

BD235 BD237  

Unit  

V

CBO  

V

CER  

V

CEO  

V

EBO  

I

C  

Collector-base voltage (I

E

= 0)  

Collector-emitter voltage (R

BE

= 1 k

Ω

)  

Collector-emitter voltage (I

B

= 0)  

Emitter-base voltage (I

C

= 0)  

Collector current  

60  

60  

60  

100  

100  

80  

V

V

V

5

2

V

A

I

CM  

Collector peak current (t

p

< ms)  

T

o

tal dissipation at T

case

= 25°C  

Storage temperature  

6

A

P

TOT  

T

stg  

25  

W

°C  

°C  

-65 to 150  

150  

T

J  

Max. operating junction temperature  

2/9  

Doc ID 4189 Rev 3  

BD235, BD237  

Electrical characteristics  

2

Electrical characteristics  

(T  

= 25°C; unless otherwise specified)  

case  

Table 3.  

Symbol  

Electrical characteristics  

Parameter  

Test conditions  

Min. Typ. Max. Unit  

V

CB

= rated V

CBO  

Collector cut-off current  

(I

E

= 0)  

0.1  

2

mA  

mA  

I

CBO  

–

–

V

CB

= rated V

CBO

T

C

= 150°C  

Emitter cut-off current  

(I

C

= 0)  

I

EBO  

V

EB

= 5V  

1

mA  

Collector-emitter  

sustaining voltage  

(I

B

= 0)  

I

C

= 100mA  

for BD235  

for BD237  

(1)  

60  

80  

–

V

V

V

CEO(sus)  

Collector-emitter  

saturation voltage  

(1)  

I

C

= 1A

__  

I

B

= 0.1A  

V

CE

= 2V  

–

–

0.6  

1.3  

V

V

V

CE(sat)  

(1)  

I

C

= 1A

___  

Base-emitter on voltage  

DC current gain  

V

BE(on)  

I

C

= 150mA

_

V

CE

= 2V  

I

C

= 1A

_

V

CE

= 2V  

40  

25  

(1)  

–

h

FE  

1. Pulsed

 

duration = 300 µs, duty cycle = 1.5 %.  

2.1  

Electrical characteristic (curves)  

Figure 2.  

Safe operating area  

Figure 3.  

Derating curves  

Doc ID 4189 Rev 3  

3/9  

Electrical characteristics  

Figure 4.  

BD235, BD237  

DC current gain (V

 

= 2 V)  

Figure 5.  

DC current gain (V

 

= 4 V)  

CE  

CE  

Figure 6.  

Collector-emitter saturation

 

Figure 7.  

voltage  

Base-emitter saturation  

voltage  

Figure 8.  

Base-emitter on voltage  

Figure 9.  

Resistive load switching time  

(on)  

4/9  

Doc ID 4189 Rev 3  

BD235, BD237  

Electrical characteristics  

Figure 10.

 

Resistive load switching time  

(off)  

2.2  

Test circuit  

Figure 11.

 

Resistive load switching test circuit  

1. Fast

 

electronic switch  

2. Non-inductive

 

resistor  

Doc ID 4189 Rev 3  

5/9  

Package mechanical data  

BD235, BD237  

3

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in different grades of  

®

®

ECO

P

A

CK packages,

 

depending on their level of environmental compliance. ECO

P

A

CK  

specifications, grade definitions and product status are available at:

®

ECO

P

A

CK is

 

an ST trademark.  

6/9  

Doc ID 4189 Rev 3  

BD235, BD237  

Package mechanical data  

Doc ID 4189 Rev 3  

7/9  

Revision history  

BD235, BD237  

4

Revision history  

Table 4.  

Date  

11-Feb-2003  

Document revision history  

Revision  

Changes  

1

2

3

Initial release.  

09-Jul-2007  

03-Jun-2009  

Added: figures 2, 3, 4, 5, 6, 7, 8, 9, 10, 11 and 12.  

Minor text changes.  

8/9  

Doc ID 4189 Rev 3  

BD235, BD237  

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