STMicroelectronics-BD239C

Part #STMicroelectronics-BD239C
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STMicroelectronics-BD239C
BD239C  
NPN power transistor  
Features  
■
NPN transistor  
Applications  
■
General purpose switching and amplifier  
transistor  
3
Description  
2
1
The device is manufactured in Planar technology  
with “Base Island” layout. The resulting transistor  
shows exceptional high gain performance  
coupled with very low saturation voltage. The  
PNP type is the BD240C.  
TO-220  
Figure 1.  
Internal schematic diagram  
Table 1.  
Order code  
BD239C  
Device summary  
Marking  
Package  
TO-220  
Packaging  
BD239C  
Tube  
July 2007  
Rev 2  
1/9  
9

Electrical ratings  
BD239C  
1
Electrical ratings  
Table 2.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
Collector-emitter voltage (R
 
= 100
Ω)  
115  
V
V
CER  
BE  
V
Collector-base voltage (I
 
= 0)  
100  
CEO  
EBO  
B
V
Emitter-base voltage (I
 
= 0)  
5
V
C
I
Collector current  
Collector peak current  
Base current  
2
A
C
I
4
A
CM  
I
0.6  
A
B
P
P
Total dissipation at T  
Total dissipation at T  
Storage temperature  
≤
25°C  
30  
2
W
W
°C  
°C  
TOT  
TOT  
case  
amb  
≤
25°C  
T
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
2/9  

BD239C  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25°C unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
= 100V  
CE  
Min. Typ. Max. Unit  
Collector cut-off current  
V
I
0.2  
0.3  
1
mA  
mA  
mA  
CES  
(V =
 
0)  
BE  
Collector cut-off current  
I
V
V
= 60V  
= 5V  
CEO  
CE  
EB  
(I =
 
0)  
B
Emitter cut-off current  
I
EBO  
(I =
 
0)  
C
Collector-emitter  
sustaining voltage  
(1)  
I =
 
30mA  
100  
V
V
C
CEO(sus)  
(I =
 
0)  
B
Collector-emitter  
saturation voltage  
(1)  
I =
 
1A  
_
I =
 
0.2A  
0.7  
1.3  
V
V
V
C
B
CE(sat)  
(1)  
I =
 
1A
_ _  
V
= 4V  
CE  
Base-emitter voltage  
DC current gain  
V
C
BE  
I =
 
0.2A
_ _  
V
= 4V  
= 4V  
40  
15  
C
CE  
h
FE  
I =
 
1A  
V
CE  
C
Note (1) Pulsed duration = 300
µ
s, duty cycle
≤
1.5%  
2.1  
Electrical characteristic (curves)  
Figure 2.  
Safe operating area  
Figure 3.  
Derating curve  
3/9  

Electrical characteristics  
Figure 4.  
BD239C  
DC current gain  
Figure 5.  
DC current gain  
Figure 6.  
Collector-emitter saturation
 
Figure 7.  
voltage  
Base-emitter saturation  
voltage  
Figure 8.  
Base-emitter on voltage  
Figure 9.  
Resistive load switching time  
4/9  

BD239C  
Electrical characteristics  
Figure 10.
 
Resistive load switching time  
2.2  
Test circuit  
Figure 11.
 
Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
5/9  

Package mechanical data  
BD239C  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at:

6/9  

BD239C  
Package mechanical data  
TO-220 Mechanical data  
mm.  
TYP  
DIM.  
MIN.  
4.40  
0.61  
1.14  
0.49  
15.25  
MAX.  
4.60  
A
b
0.88  
b1  
c
1.70  
0.70  
D
15.75  
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
3.75  
2.65  
3.85  
2.95  
7/9  

Revision history  
BD239C  
4
Revision history  
Table 4.  
Date  
Revision history  
Revision  
Changes  
01-April-1999  
02-Jul-2007  
1
2
Initial release.  
Figures 2,3,4,5,6,7,8,9 and figure 10 have been added.  
8/9  

BD239C  
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