STMicroelectronics-BD241C

Part #STMicroelectronics-BD241C
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STMicroelectronics-BD241C
BD241A  
BD241C  
NPN power transistors  
.
Features  
■
NPN transistors  
Applications  
■
Audio, general purpose switching and amplifier  
transistors  
3
2
1
Description  
TO-220  
The devices are manufactured in Planar  
technology with “Base Island” layout. The  
resulting transistor shows exceptional high gain  
performance coupled with very low saturation  
voltage. The PNP types are BD242A and  
BD242C.  
Figure 1.  
Internal schematic diagram  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
TO-220  
TO-220  
Packaging  
BD241A  
BD241C  
BD241A  
BD241C  
Tube  
Tube  
July 2007  
Rev 2  
1/9  
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Absolute maximum ratings  
BD241A BD241C  
1
Absolute maximum ratings  
Table 2.  
Symbol  
Absolute maximum ratings  
Parameter  
Value  
Unit  
BD241A  
BD241C  
V
Collector-emitter voltage (R
 
= 100
Ω
)  
70  
60  
115  
100  
V
V
CER  
BE  
V
Collector-emitter voltage (I
 
= 0)  
B
CEO  
EBO  
V
Emitter-base voltage (I
 
= 0)  
5
3
V
C
I
Collector current  
A
C
I
Collector peak current (t
 
< ms)  
5
A
CM  
p
I
Base current  
1
A
B
P
Total dissipation at T  
= 25°C  
case  
40  
W
°C  
°C  
TOT  
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
2/9  

BD241A BD241C  
Electrical characteristics  
2
Electrical characteristics  
(T  
= 25°C; unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
Min. Typ.
 
Max. Unit  
Collector cut-off current  
V
I
= rated V  
0.2  
mA  
CES  
CE  
CEO  
(V =
 
0)  
BE  
for BD241A  
for BD241C  
V
=30V  
=60V  
Collector cut-off current  
0.3  
0.3  
mA  
mA  
CE  
I
I
CEO  
EBO  
(I =
 
0)  
V
B
CE  
Emitter cut-off current  
V
=5V  
1
mA  
EB  
(I =
 
0)  
C
Collector-emitter  
sustaining voltage  
I =30mA  
C
(1)  
60  
V
V
V
for BD241A  
for BD241C  
CEO(sus)  
(I =
 
0)  
100  
B
Collector-emitter  
saturation voltage  
(1)  
I =3A
 
_
I =0.6A  
1.2  
1.8  
V
V
V
C
B
CE(sat)  
(1)  
I =3A  
V
=4V  
Base-emitter voltage  
DC current gain  
V
C
CE  
BE  
I =1A  
V
V
=4V  
=4V  
25  
10  
C
CE  
CE  
(1)  
h
FE  
I =3A  
C
1. Pulsed
 
duration = 300 ms, duty cycle
≥
1.5%.  
2.1  
Electrical characteristic (curves)  
Figure 2.  
Safe operating area  
Figure 3.  
Derating curve  
3/9  

Electrical characteristics  
Figure 4.  
BD241A BD241C  
DC current gain  
Figure 5.  
DC current gain  
Figure 6.  
Collector-emitter saturation
 
Figure 7.  
voltage  
Base-emitter saturation  
voltage  
Figure 8.  
Base-emitter on voltage  
Figure 9.  
Resistive load switching time  
4/9  

BD241A BD241C  
Electrical characteristics  
Figure 10.
 
Resistive load switching time  
2.2  
Test circuits  
Figure 11.
 
Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
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Package mechanical data  
BD241A BD241C  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect . The category of  
second level interconnect is marked on the package and on the inner box label, in compliance  
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also  
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are  
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BD241A BD241C  
Package mechanical data  
TO-220 Mechanical data  
mm.  
TYP  
DIM.  
MIN.  
4.40  
0.61  
1.14  
0.49  
15.25  
MAX.  
4.60  
A
b
0.88  
b1  
c
1.70  
0.70  
D
15.75  
D1  
E
1.27  
10  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
3.75  
2.65  
3.85  
2.95  
7/9  

Revision history  
BD241A BD241C  
4
Revision history  
Table 4.  
Date  
01-Dec-2000  
10-Jul-2007  
Revision history  
Revision  
Changes  
1
2
Initial Release  
Figure 2 and figure 3, have been added.  
8/9  

BD241A BD241C  
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