STMicroelectronics-BD241C
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BD241A
BD241C
NPN power transistors
.
Features
■
NPN transistors
Applications
■
Audio, general purpose switching and amplifier
transistors
3
2
1
Description
TO-220
The devices are manufactured in Planar
technology with “Base Island” layout. The
resulting transistor shows exceptional high gain
performance coupled with very low saturation
voltage. The PNP types are BD242A and
BD242C.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Order codes
Marking
Package
TO-220
TO-220
Packaging
BD241A
BD241C
BD241A
BD241C
Tube
Tube
July 2007
Rev 2
1/9
9
Absolute maximum ratings
BD241A BD241C
1
Absolute maximum ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
BD241A
BD241C
V
Collector-emitter voltage (R
= 100
Ω
)
70
60
115
100
V
V
CER
BE
V
Collector-emitter voltage (I
= 0)
B
CEO
EBO
V
Emitter-base voltage (I
= 0)
5
3
V
C
I
Collector current
A
C
I
Collector peak current (t
< ms)
5
A
CM
p
I
Base current
1
A
B
P
Total dissipation at T
= 25°C
case
40
W
°C
°C
TOT
T
Storage temperature
-65 to 150
150
stg
T
Max. operating junction temperature
J
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BD241A BD241C
Electrical characteristics
2
Electrical characteristics
(T
= 25°C; unless otherwise specified)
case
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ.
Max. Unit
Collector cut-off current
V
I
= rated V
0.2
mA
CES
CE
CEO
(V =
0)
BE
for BD241A
for BD241C
V
=30V
=60V
Collector cut-off current
0.3
0.3
mA
mA
CE
I
I
CEO
EBO
(I =
0)
V
B
CE
Emitter cut-off current
V
=5V
1
mA
EB
(I =
0)
C
Collector-emitter
sustaining voltage
I =30mA
C
(1)
60
V
V
V
for BD241A
for BD241C
CEO(sus)
(I =
0)
100
B
Collector-emitter
saturation voltage
(1)
I =3A
_
I =0.6A
1.2
1.8
V
V
V
C
B
CE(sat)
(1)
I =3A
V
=4V
Base-emitter voltage
DC current gain
V
C
CE
BE
I =1A
V
V
=4V
=4V
25
10
C
CE
CE
(1)
h
FE
I =3A
C
1. Pulsed
duration = 300 ms, duty cycle
≥
1.5%.
2.1
Electrical characteristic (curves)
Figure 2.
Safe operating area
Figure 3.
Derating curve
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Electrical characteristics
Figure 4.
BD241A BD241C
DC current gain
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation
Figure 7.
voltage
Base-emitter saturation
voltage
Figure 8.
Base-emitter on voltage
Figure 9.
Resistive load switching time
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BD241A BD241C
Electrical characteristics
Figure 10.
Resistive load switching time
2.2
Test circuits
Figure 11.
Resistive load switching test circuit
1) Fast electronic switch
2) Non-inductive resistor
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Package mechanical data
BD241A BD241C
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in compliance
with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also
marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are
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BD241A BD241C
Package mechanical data
TO-220 Mechanical data
mm.
TYP
DIM.
MIN.
4.40
0.61
1.14
0.49
15.25
MAX.
4.60
A
b
0.88
b1
c
1.70
0.70
D
15.75
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
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Revision history
BD241A BD241C
4
Revision history
Table 4.
Date
01-Dec-2000
10-Jul-2007
Revision history
Revision
Changes
1
2
Initial Release
Figure 2 and figure 3, have been added.
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BD241A BD241C
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