STMicroelectronics-BD679A

BD6xxx  

Complementary power Darlington transistors  

.

Features  

■

Good h

 

linearity  

FE  

■

High f

 

frequency  

T

■

Monolithic Darlington configuration with  

integrated antiparallel collector-emitter diode  

1

Applications  

2

3

■

Linear and switching industrial equipment  

SO

T

–

32  

Description  

The devices are manufactured in planar base  

island technology with monolithic Darlington  

configuration.  

Figure 1.  

Internal schematic diagram  

R1 typ.= 15 K

Ω

 

R2 typ.= 100

Ω  

Table 1.  

Device summary  

Order codes  

Marking  

Package  

Packaging  

BD677  

BD677A  

BD678  

BD678A  

BD679  

BD679A  

BD680  

BD680A  

BD681  

BD682  

BD677  

BD677A  

BD678  

BD678A  

BD679  

BD679A  

BD680  

BD680A  

BD681  

BD682  

SO

T

–

32  

T

u

be  

January 2008  

Rev 5  

1/12  

12  

Contents  

BD6xxx  

Contents  

2/12  

BD6xxx  

Absolute maximum ratings  

1

Absolute maximum ratings  

Table 2.  

Symbol  

Absolute maximum ratings  

Value  

BD677  

BD679  

BD681  

NPN  

Parameter  

BD677A  

BD679A  

Unit  

BD678  

BD680  

PNP  

BD682  

BD678A  

BD680A  

V

CBO  

V

CEO  

V

EBO  

I

C  

Collector-base voltage (I

E

= 0)  

Collector-emitter voltage (I

B

= 0)  

Emitte-base voltage (I

C

= 0)  

Collector current  

60  

80  

100  

V

5

V

A

4

I

CM  

Collector peak current  

6

0.1  

A

I

B  

Base current  

A

P

TOT  

T

stg  

T

J  

T

o

tal dissipation at T

case

= 25°C  

Storage temperature  

40  

W

°C  

°C  

-65 to 150  

150  

Max. operating junction temperature  

Note:  

For PNP types voltage and current values are negative  

3/12  

Electrical characteristics  

BD6xxx  

2

Electrical characteristics  

(T  

= 25

°C

;

unless otherwise specified)  

case  

Table 3.  

Symbol  

Electrical characteristics  

Parameter  

Test conditions  

Min. Typ. Max. Unit  

Collector cut-off current  

(I

B

= 0)  

I

CEO  

I

CBO  

I

EBO  

V

CE

= half rated V

CEO  

0.5  

0.2  

mA  

mA  

mA  

V

CE

= rated V

CBO  

V

CE

= rated V

CBO  

T

c

= 100 °C  

Collector cut-off current  

(I

E

= 0)  

2

2

Emitter cut-off current  

(I

C

= 0)  

V

EB

= 5 V  

for BD677, BD677A,  

BD678, BD678A  

60  

I

C

= 50 mA  

Collector-emitter  

for BD679, BD679A,  

BD680, BD680A  

(1)  

V

V

CEO(sus)  

80  

sustaining voltage (I

B

= 0)  

I

C

= 50 mA  

for BD681, BD682  

I

C

= 50 mA  

100  

for BD677, BD678,  

BD679, BD680, BD681,  

BD682  

2.5  

2.8  

Collector-emitte

r

s

aturation  

voltage  

I

C

= 1.5 A  

I

B

= 30 mA  

(1)  

V

V

CE(sat)  

for BD677A, BD678A,  

BD679A, BD680A  

I

C

= 2 A  

I

B

= 40 mA  

for BD677, BD678,  

BD679, BD680, BD681,  

BD682  

I

C

= 1.5 A

___

V

CE

= 3 V  

(1)  

Base-emitter voltage  

2.5  

V

V

BE  

for BD677A, BD678A,  

BD679A, BD680A  

I

C

= 2 A  

V

CE

= 3 V  

4/12  

BD6xxx  

Electrical characteristics  

Min. Typ. Max. Unit  

Table 3.  

Symbol  

Electrical characteristics (continued)  

Parameter Test

 

conditions  

for BD677, BD678,  

BD679, BD680, BD681,  

BD682  

I

C

= 1.5 A

_ _

 

V

CE

= 3 V  

(1)  

DC current gain  

750  

h

FE  

for BD677A, BD678A,  

BD679A, BD680A  

I

C

= 2 A

_  

_

V

CE

= 3 V  

1. Pulsed

 

duration = 300 ms, duty cycle

≥

1.5%.  

Note:  

For PNP types voltage e current values are negative.  

5/12  

Electrical characteristics  

BD6xxx  

2.1  

Typical characteristic (curves)  

Figure 2.  

Figure 4.  

Figure 6.  

DC current gain (NPN)  

Figure 3.  

DC current gain (PNP)  

DC current gain (NPN)  

Figure 5.  

DC current gain (PNP)  

Collector-emitter saturation

 

Figure 7.  

voltage (NPN)  

Collector-emitter saturation  

voltage (PNP)  

6/12  

BD6xxx  

Electrical characteristics  

Figure 8.  

Base-emitter saturation  

voltage (NPN)  

Figure 9.  

Base-emitter saturation  

voltage (PNP)  

Figure 10.

 

Base-emitter voltage (NPN)  

Figure 11.

 

Base-emitter voltage (PNP)  

Figure 12.

 

Resistive load switching time

 

Figure 13.

 

Resistive load switching time  

(NPN, on)

 

(PN

P

,

o

n)  

7/12  

Electrical characteristics  

BD6xxx  

Figure 14.

 

Resistive load switching time

 

Figure 15.

 

Resistive load switching time  

(NPN, off)

 

(PN

P

,

o

ff)  

2.2  

Test circuit  

Figure 16.

 

Resistive load switching test circuit  

1) Fast electronic switch  

2) Non-inductive resistor  

Note:  

For PNP types voltage e current values are negative.  

8/12  

BD6xxx  

Package mechanical data  

3

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in ECO

P

A

CK®  

packages. These packages have a lead-free second level interconnect . The category of  

second level interconnect is marked on the package and on the inner box label, in  

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  

conditions are also marked on the inner box label. ECO

P

ACK is an ST trademark.  

ECO

P

9/12  

Package mechanical data  

BD6xxx  

10/12  

BD6xxx  

Revision history  

4

Revision history  

Table 4.  

Date  

Document revision history  

Revision  

Changes  

21-Jun-2004  

14-Jan-2008  

4

1.

T

e

chnology

 

change from epybase to planar.  

2. Updated

 

5

3. Content

 

reworked to improve readabilit

y

.  

11/12  

BD6xxx  

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