STMicroelectronics-BDX53C

BDX53B – BDX53C  

BDX54B – BDX54C  

Complementary power Darlington transistors  

Features  

■

Good h

 

linearity  

FE  

■

High f

 

frequency  

T

■

Monolithic Darlington configuration with  

integrated antiparallel collector-emitter diode  

Application  

3

2

1

■

Audio amplifiers  

TO-220  

■

Linear and switching industrial equipment  

Description  

The devices are manufactured in planar base  

island technology with monolithic Darlington  

configuration.  

Figure 1.

 

Internal schematic diagram  

R2 typ.= 150

Ω

 

R1 typ.= 10 k

Ω  

Table 1.  

Device summary  

Order code  

Marking  

Package  

Packaging  

BDX53B  

BDX53C  

BDX54B  

BDX54C  

BDX53B  

BDX53C  

BDX54B  

BDX54C  

TO-220  

T

u

be  

October 2007  

Rev 4  

1/7  

7

Electrical ratings  

BDX53B – BDX53C – BDX54B – BDX54C  

1

Electrical ratings  

Table 2.  

Symbol  

Absolute maximum ratings  

Parameter  

Value  

NPN  

PNP  

BDX53B  

BDX54B  

BDX53C  

BDX54C  

Unit  

V

CBO

Collector-base voltage (I

E

= 0)  

V

CEO

Collector-emitter voltage (I

B

= 0)  

V

EBO

Emitter-base voltage (I

C

= 0)  

80  

80  

100  

100  

V

V

5

8

V

I

C  

I

CM  

I

B  

Collector current  

A

Collector peak current (repetitive)  

Base current  

12  

0.2  

60  

A

mA  

W

°C  

°C  

P

TOT  

T

stg  

T

J  

T

o

tal dissipation at T

c

= 25°C  

Storage temperature  

-65 to 150  

150  

Max. operating junction temperature  

Note:  

For PNP types voltage and current values are negative.  

2/7  

BDX53B – BDX53C – BDX54B – BDX54C  

Electrical characteristics  

2

Electrical characteristics  

(T  

=25°C unless otherwise specified)  

CASE  

Table 3.  

Symbol  

Electrical characteristics  

Parameter  

Test conditions  

I

C

= 100 mA  

Min. Typ. Max. Unit  

Collector-emitter  

sustaining voltage (I

B

= 0)  

(1)  

V

CEO(sus)  

for BDX53B – BDX54B  

for BDX53C – BDX54C  

80  

V

V

100  

V

0.2  

0.2  

0.5  

0.5  

2

mA  

mA  

mA  

mA  

mA  

for BDX53B – BDX54B  

Collector cut-off current  

(I

E

= 0)  

I

CBO  

V

CB

= 100 V  

for BDX53C – BDX54C  

V

CE

= 40 V  

for BDX53B – BDX54B  

Collector cut-off current  

(I

B

= 0)  

I

CEO  

V

CE

= 50 V  

for BDX53C – BDX54C  

Emitter cut-off current  

(I

C

= 0)  

I

EBO  

V

EB

= 5 V  

Collector-emitte

r

s

aturation  

voltage  

(1)  

I

C

= 3 A;  

I

B

= 12 mA  

2

V

V

V

CE(sat)  

Base-emitter saturation  

voltage  

(1)  

I

C

= 3 A;  

I

C

= 3 A;  

I

B

= 12 mA  

V

CE

= 3 V  

2.5  

V

BE(sat)  

(1)  

DC current gain  

750  

h

FE  

I

F

= 3 A;  

I

F

= 8 A;  

1.8  

2.5  

2.5  

V

V

(1)  

Diode forward voltage  

V

F  

1. Pulsed:

 

pulse duration = 300

µ

s, duty cycle 1.5%  

Note:  

For PNP types voltage and current values are negative.  

3/7  

Package mechanical data  

BDX53B – BDX53C – BDX54B – BDX54C  

3

Package mechanical data  

In order to meet environmental requirements, ST offers these devices in ECO

P

A

CK®  

packages. These packages have a Lead-free second level interconnect. The category of  

second level interconnect is marked on the package and on the inner box label, in  

compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  

conditions are also marked on the inner box label. ECO

P

ACK is an ST trademark.  

ECO

P

ACK specifications are available at:

4/7  

BDX53B – BDX53C – BDX54B – BDX54C  

Package mechanical data  

TO-220 mechanical data  

mm  

inch  

Dim  

Min  

Typ  

Max  

Min  

Typ  

Max  

A

b

4.40  

0.61  

1.14  

0.4

9

 

15.25  

4.60  

0.

88  

1.70  

0.70  

15.75  

0.17

3  

0.024  

0.044  

0.01

9  

0.6  

0.1

8

1  

0.0

3

4  

0.066  

0.027  

0.62  

b

1  

c

D

D1  

E

1.27  

0.050  

10  

10.40  

2.70  

5.15  

1.

3

2  

6.60  

2.72  

14  

0.

393  

0.0

9

4  

0.1

9

4  

0.04

8  

0.244  

0.0

9

4  

0.511  

0.1

3

7  

0.40

9  

0.106  

0.202  

0.051  

0.256  

0.107  

0.551  

0.154  

e

2.40  

4.

9

5  

1.2

3  

6.20  

2.40  

1

3  

e1  

F

H1  

J1  

L

L1  

L20  

L

3

0  

∅

P  

Q

3

.50  

3

.

93  

16.40  

0.645  

2

8

.

9

0  

1.1

3

7  

3

.75  

3

.

8

5  

2.

9

5  

0.147  

0.104  

0.151  

0.116  

2.65  

5/7  

Revision history  

BDX53B – BDX53C – BDX54B – BDX54C  

4

Revision history  

Table 4.  

Date  

Document revision history  

Revision  

Changes  

09-Sep-2004  

23-Oct-2007  

3

4

T

e

chnology change from epibase to planar (PCN APM-  

PWR/07/2417 and APM-PWR/07/2615)  

6/7  

BDX53B – BDX53C – BDX54B – BDX54C  

Revision history  

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