STMicroelectronics-BTA10-600GPRG

Part #STMicroelectronics-BTA10-600GPRG
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STMicroelectronics-BTA10-600GPRG
BTA10-600GP  
10 A
T
r
iac  
Features  
A2  
■
Low I
 
:  
H
– 13
 
mA max  
■
High surge current:  
– I
 
= 120 A  
G
A1  
TSM  
■
I specified
 
in four quadrants  
GT  
■
Insulating voltage:  
– 2500
 
V  
(UL Recognized: E81734)  
(RMS)  
A1  
A2  
Description  
G
The B
T
A
10-600GP uses high performance, glass  
passivated chips.  
TO-220AB  
The insulated TO-220AB package, the high surge  
current and low holding current make this product  
well adapted to CFL and LED dimmer  
applications.  
September 2011  
Doc ID 022222 Rev 1  
1/7  
7

Characteristics  
BTA10-600GP  
1
Characteristics  
Table 1.  
Absolute ratings (limiting values)  
Parameter  
Symbol  
Value  
Unit  
V

DRM  

V

RRM  

Repetitive peak off-state voltage T

j

= 125° C  
RMS on-state current (360° conduction angle)  
600  
V
A
I

T(RMS)  

I

TSM  

I

2

t  
T

c

= 90° C  
t

p

= 8.3 ms  
t

p

= 10 ms  
t

p

= 10 ms  
10  
126  
120  
72  
Non repetitive surge peak on-state current  
(T

j

initial = 25° C)  
A
I t Value for fusing  
A

2

s  
²
Repetitive  
F = 50 Hz  
10  
50  
Critical rate of rise of on-state current  
I

G

= 500 mA
 
di

G

/dt = 1 A/µs  
dI/dt  
A/µs  
° C  
Non repetitive  
T

stg  

T

j  

Storage junction temperature range  
Operating junction temperature range  
-40 to +150  
-40 to +125  
Table 2.  
Symbol  
Electrical characteristics  
Test conditions  
Quadrant  
Value  
Unit  
I – II- III  
IV  
MAX  
MAX  
25  
100  
1.5  
0.2  
2
(1)  
I

GT  

V

D

= 12 V
 
(DC)  
V

D

= 12 V
 
(DC)  
R

L

= 33
 
Ω
 
R

L

= 33
 
Ω  
T

j

= 25° C  
mA  
V

GT  

V

GD  

t

gt  

T

j

= 25° C  
I – II – III – IV
 
MAX  
I – II – III – IV
 
MIN  
I – II – III – IV
 
TYP  
V
V
V

D

= V

DRM

R

L

= 3.3
 
k
Ω  
T

j

= 110° C  
V

D

= V

DRM

I

G

= 500 mA
 
dI

G

/dt = 3 A/µs
 
T

j

= 25° C  
µs  
I – II – III  
TYP  
IV  
20  
I

L  

I

G

= 1.2 I

GT  

T

j

= 25° C  
mA  
40  
(1)  
I

H  

I

T

= 100 mA
 
gate open  
I

TM

= 14 A
 
t

p

= 380 µs  
T

j

= 25° C  
T

j

= 25° C  
T

j

= 25° C  
T

j

= 110° C  
MAX  
MAX  
MAX  
MAX  
MIN  
13  
mA  
V
(1)  
V

TM  

1.5  
0.01  
0.5  
30  
I

DRM  

I

RRM  

V

DRM

= V

RRM  

mA  
V/µs  
V/µs  
Linear slope up to V

D

= 67% V

DRM  

gate open  
dV/dt

(1)  

T

j

= 110° C  
T

j

= 110° C  
TYP  
MIN  
100  
1
(dV/dt)c

(1)

(dI/dt)c = 2.2 A/ms  
TYP  
10  
1. For
 
either polarity of electrode A

2

voltage with reference to electrode A

1

.  
2/7  
Doc ID 022222 Rev 1  

BTA10-600GP  
Characteristics  
Table 3.  
Symbol  
Gate characteristics (maximum values)  
Parameter  
Value  
Unit  
P

G(AV)  

P

GM  

I

GM  

Average gate power dissipation  
Peak gate power dissipation  
Peak gate current  
1
10  
4
W
W
A
t

p

= 20 µs  
t

p

= 20 µs  
t

p

= 20 µs  
V

GM  

Peak positive gate voltage  
16  
V
Table 4.  
Symbol  
Thermal resistances  
Parameter  
Value  
Unit  
R

th(j-a)  

Junction to ambient  
60  
4
R

th(j-c)

DC  
Junction to case for DC  
° C/W  
R

th(j-c)

AC  
Junction to case for 360° conduction angle (F = 50 Hz)  
3
Figure 1.  
Maximum rms power dissipation  
versus rms on-state current  
Figure 2.  
Maximum rms power dissipation  
and maximum allowable  
temperatures (T  
and T  
)
amb  
case  
For different thermal resistances  
heatsink + contact  
F = 50 Hz, curves  
are cut off by  
(dI/dt) limitation  
c
Figure 3.  
On-state rms current versus case
 
Figure 4.  
temperature  
Relative variation of thermal  
impedance versus pulse duration  
Zth/Rth  
1
Zth(j-c)  
0.1  
Zth(j-a)  
tp(s)  
0.01  
1E-3  
1E-2  
1E-1  
1E+0  
1E+1  
1E+2 5E+2  
Doc ID 022222 Rev 1  
3/7  

Characteristics  
BTA10-600GP  
Figure 5.  
Relative variation of gate trigger  
current and holding current versus  
junction temperature  
Figure 6.  
Non repetitive surge peak on-state  
current versus number of cycles  
Figure 7.  
Non repetitive surge peak on-state
 
Figure 8.  
current and corresponding value of  
I t  
On-state characteristics (maximum  
values)  
2
Sinusoidal pulse width t
 
< 10 ms  
p
4/7  
Doc ID 022222 Rev 1  

BTA10-600GP  
Package information  
2
Package information  
●
●
●
Epoxy meets UL94,V0  
Cooling method: Conduction  
Recommended torque value: 0.4 to 0.6 N·m  
In order to meet environmental requirements, ST offers these devices in different grades of  
®
®
ECO
P
A
CK packages,
 
depending on their level of environmental compliance. ECO
P
A
CK  
specifications, grade definitions and product status are available at:

.  
®
ECO
P
A
CK is
 
an ST trademark.  
Table 5.  
TO-220AB dimensions  
Dimensions  
Millimeters  
Min. Typ. Max. Min. Typ. Max.  
Ref.  
Inches  
A
15.20  
15.90 0.598  
0.625  
a1  
3.75  
0.147  
C
B
a2 13.00  
10.00  
14.00 0.511  
10.40 0.393  
0.88 0.024  
1.32 0.048  
4.60 0.173  
0.70 0.019  
2.72 0.094  
2.70 0.094  
6.60 0.244  
3.85 0.147  
0.551  
0.409  
0.034  
0.051  
0.181  
0.027  
0.107  
0.106  
0.259  
0.151  
Ø I  
b2  
B
L
F
b1 0.61  
b2 1.23  
A
I4  
C
4.40  
l3  
c1 0.49  
c2 2.40  
c2  
a1  
l2  
a2  
e
F
2.40  
6.20  
M
c1  
b1  
ØI 3.75  
e
I4 15.80
 
16.40 16.80 0.622 0.646 0.661  
L
2.65  
1.14  
1.14  
2.95 0.104  
1.70 0.044  
1.70 0.044  
0.116  
0.066  
0.066  
l2  
l3  
M
2.60  
0.102  
Doc ID 022222 Rev 1  
5/7  

Ordering information  
BTA10-600GP  
3
Ordering information  
Table 6.  
Order code  
B
T
A
10-600GPRG  
Ordering information  
Marking  
Package  
Weight Base
 
qty Delivery
 
mode  
B
T
A
10 600GP  
TO-220AB  
2.3 g  
50  
T
u
be  
4
Revision history  
Table 7.  
Date  
13-Sep-2011  
Document revision history  
Revision  
Changes  
1
Initial release  
6/7  
Doc ID 022222 Rev 1  

BTA10-600GP  
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Doc ID 022222 Rev 1  
7/7