STMicroelectronics-BUL510

Part #STMicroelectronics-BUL510
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STMicroelectronics-BUL510
BUL510  
®
HIGH VOLTAGE FAST-SWITCHING  
NPN POWER TRANSISTOR  
■
STMicroelectronics PREFERRED  
SALESTYPE  
■
■
■
■
■
NPN TRANSISTOR  
HIGH VOLTAGE CAPABILITY  
LOW SPREAD OF DYNAMIC PARAMETERS  
VERY HIGH SWITCHING SPEED  
FULLY CHARACTERIZED AT 125

o

C  
APPLICATIONS  
3
2
■
ELECTRONIC BALLASTS FOR  
FLUORESCENT LIGHTING  
SWITCH MODE POWER SUPPLIES  
ELECTRONIC TRANSFORMER FOR  
HALOGEN LAMP  
1
■
■
TO-220  
DESCRIPTION  
The BUL510 is manufactured using high voltage  
Multiepitaxial Mesa technology for cost-effective  
high performance. It uses a Hollow Emitter  
structure to enhance switching speeds.  
INTERNAL SCHEMATIC DIAGRAM  
The BUL series is designed for use in lighting  
applications and low cost switch-mode power  
supplies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
V

CES  

V

CEO  

V

EBO  

I

C  

Parameter  
Collector-Emitter Voltage (V

BE

= 0)  
Collector-Emitter Voltage (I

B

= 0)  
Emitter-Base Voltage (I

C

= 0)  
Collector Current  
Value  
Unit  
1000  
V
V
450  
9
V
10  
18  
A
I

CM  

Collector Peak Current (t

p

< 5 ms)  
Base Current  
A
I

B  

3.5  
A
I

BM  

Base Peak Current (t

p

< 5 ms)  
7
A
o
P

tot  

Total Dissipation at T

c

= 25
 
C  
100  
W

o

C  

o

C  
T

stg  

T

j  

Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
1/6  
February 2003  

BUL510  
THERMAL DATA  
R

thj-case

Thermal Resistance Junction-Case  
R

thj-amb

Thermal Resistance Junction-Ambient  
Max  
Max  
1.25  
62.5  

o

C/W  

o

C/W  
ELECTRICAL CHARACTERISTICS
(T

case

= 25

o

C unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
V

CE

= 1000 V  
Min.  
Typ.  
Max.  
Unit  
I

CES  

Collector Cut-off  
Current (V

BE

= 0)  
100  
500  
µ
A  
µ
A  
o
V

CE

= 1000 V  
T

c

= 125
 
C  
I

CEO  

Collector Cut-off  
Current (I

B

= 0)  
V

CE

= 450 V  
250  
µ
A  
V

CEO(sus)

Collector-Emitter  
Sustaining Voltage  
(I

B

= 0)  
I

C

= 100 mA  
I

E

= 10 mA  
L = 25 mH  
450  
9
V
V

EBO  

Emitter-Base Voltage  
(I

C

= 0)  
V
V

CE(sat)  

Collector-Emitter  
Saturation Voltage  
I

C

= 3 A  
I

C

= 4 A  
I

C

= 5 A  
I

B

= 0.6 A  
I

B

= 0.8 A  
I

B

= 1.25 A  
0.8  
1
1.5  
V
V
V
V

BE(sat)  

h

FE  

Base-Emitter  
Saturation Voltage  
I

C

= 3 A  
I

C

= 5 A  
I

B

= 0.6 A  
I

B

= 1.25 A  
1.2  
1.5  
V
V
DC Current Gain  
I

C

= 1 A  
I

C

= 10 mA  
V

CE

= 5
V

= 5 V  
15  
10  
45  
INDUCTIVE LOAD  
Storage Time  
Fall Time  
I

C

= 4 A  
I

B1

= 0.8 A  
L = 200
µ
H  
V

CL

= 300 V  
I

B2

= -1.6 A  
t

s  

t

f  

2.2  
80  
3.4  
150  
µ
s  
ns  
INDUCTIVE LOAD  
Storage Time  
Fall Time  
I

C

= 4 A  
I

B1

= 0.8 A  
L = 200
µ
H  
V

CL

= 300 V  
I

B2

= -1.6 A  
T

c

= 125

o

C  
t

s  

t

f  

3
120  
µ
s  
ns  
Pulsed: Pulse duration = 300
µ
s, dut
cle 1.5 %  
Safe Operating Areas  
Derating Curve  
2/6  

BUL510  
DC Current Gain  
DC Current Gain  
Collector Emitter Saturation Voltage  
Base Emitter Saturation Voltage  
Inductive Fall
 
Time  
Inductive Storage
 
Time  
3/6  

BUL510  
Reverse Biased SOA  
RBSOA and Inductive Load Switching Test  
Circuits  
(1) Fast electronic switch  
(2) Non-inductive Resistor  
(3) Fast recovery rectifier  
4/6  

BUL510  
TO-220 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.40  
1.23  
2.40  
0.49  
0.61  
1.14  
1.14  
4.95  
2.40  
10.00  
TYP.  
MAX.  
4.60  
1.32  
2.72  
0.70  
0.88  
1.70  
1.70  
5.15  
2.70  
10.40  
MIN.  
0.173  
0.048  
0.094  
0.019  
0.024  
0.044  
0.044  
0.194  
0.094  
0.394  
MAX.  
0.181  
0.052  
0.107  
0.027  
0.034  
0.067  
0.067  
0.202  
0.106  
0.409  
A
C
D
E
F
F1  
F2  
G
G1  
H2  
L2  
L4  
L5  
L6  
L7  
L9  
M
16.40  
0.
45  
0.102  
13.00  
2.65  
14.00  
2.95  
0.511  
0.104  
0
600  
0.244  
0.137  
0.551  
0.116  
0.620  
0.260  
0.154  
15.25  
6.20  
15.75  
6.60  
3.50  
3.93  
2.60  
DIA.  
3.75  
3.85  
0.147  
0.151  
P011CI  
5/6  

BUL510  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia – Brazil – Canada – China – Finland – France – Germany – Hong Kong – India – Israel – Italy – Japan – Malaysia – Malta – Morocco –  
Singapore – Spain – Sweden – Switzerland – United Kingdom – United States.  
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