STMicroelectronics-BUL705

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STMicroelectronics-BUL705
BUL705  
High voltage fast-switching NPN Power Transistor  
General features  
■
NPN Transistor  
■
High voltage capability  
■
Low spread of dynamic parameters  
■
Minimum lot-to-lot spread for reliable operation  
■
Very high switching speed  
3
■
Fully characterized at 125
°C  
2
1
■
In compliance with the 2002/93/EC European  
TO-220  
Directive  
Description  
The device is manufactured using high voltage  
Multi-Epitaxial Planar technology for high  
switching speeds and medium voltage capability.  
I
ternal schematic diagram  
It uses a Cellular Emitter structure with planar  
edge termination to enhance switching speeds  
while maintaining the wide RBSOA.  
Applications  
■
Electronic ballas
or fluorescent lighting  
■
Dedicated for PFC solution in HF ballast half-  
bridge voltage fed  
Order codes  
Part Number  
Marking  
Package  
TO-220  
Packing  
BUL705  
BUL705  
Tube  
May 2006  
Rev 1  
1/11  
11  

BUL705  
Electrical ratings  
1
Electrical ratings  
Table 1.  
Symbol  
Absolute maximum rating  
Parameter  
Value  
Unit  
V
Collector-emitter voltage (V
 
= 0)  
700  
V
V
CES  
BE  
V
Collector-emitter voltage (I
 
= 0)  
400  
CEO  
B
V
Emitter-base voltage (I
 
= 0)  
10  
V
EBO  
C
I
Collector current  
5
A
C
I
Collector peak current (t
 
< 5ms)  
10  
A
CM  
P
I
Base current  
2
A
B
I
Base peak current (t
 
< 5ms)  
4
80  
A
BM  
P
P
Total dissipation at T
 
= 25°C  
W
°C  
°C  
tot  
c
T
Storage temperature  
-65 to 150  
150  
stg  
T
Max. operating junction temperature  
J
Table 2.  
Symbol  
Thermal data  
Parameter  
Value  
Unit  
R
Thermal resistance junction-case  
Thermal resistance junction-amb  
__
max  
__
max  
1.56  
62.5  
°C/W  
°C/W  
thj-case  
R
thj-amb  
3/11  

Electrical characteristics  
BUL705  
2
Electrical characteristics  
(T  
= 25°C unless otherwise specified)  
case  
Table 3.  
Symbol  
Electrical characteristics  
Parameter  
Test Conditions  
Min. Typ. Max. Unit  
V
V
=700V  
Collector cut-off current  
CE  
CE  
100  
500  
µ
A  
µ
A  
I
CES  
(V =-1.5V)  
=700V  
T =125°C  
BE  
j
Collector cut-off current  
I
V
=400V  
250  
µ
A  
CEO  
CE  
(I =0)  
B
Emitter-base voltage  
V
I =10mA  
E
10  
V
EBO  
(I =
 
0)  
C
Collector-emitter  
sustaining voltage  
(1)  
V
CEO(sus)  
I =100mA  
L =25mH  
400  
V
C
(I =
 
0)  
B
I =2A  
I =0.4A  
C
B
0.4  
0.6  
0.8  
V
V
V
(1)  
Collector-emitter  
saturation voltage  
V
CE(sat)  
BE(sat)  
I =3A  
I =0.6A  
C
B
I =4A  
I =1A  
C
B
2A  
I =0.4A  
1.1  
1.2  
V
V
B
Base-emitter saturation  
voltage  
(1)  
V
I =3A  
I =0.6A  
B
C
I =10mA  
V
V
=5V  
=5V  
10  
16  
C
CE  
CE  
h
DC current gain  
FE  
I =2A  
32  
C
V
=250V  
I =2A  
C
CC  
Re
tive load  
orage time  
I
= -I
 
=0.4A  
B2  
B1  
t
2.4  
3.5  
µ
s  
s
(see fig.12 )  
I =2A  
I
=0.4A  
B1  
C
Inductive load  
Storage time  
Fall time  
V
=-5V  
R
=0
Ω
 
BB  
BE(off)  
t
0.7  
50  
1.4  
µ
s  
s
V
=250V L
 
=200
µ
H  
clamp  
t
100  
ns  
f
(see fig.13)  
I =2A  
I
=0.4A  
B1  
C
Inductive load  
Storage time  
Fall time  
V
=-5V  
R
=0
Ω  
BB  
BE(off)  
t
1
µ
s  
s
V
=250V L
 
=200
µ
H  
clamp  
t
75  
ns  
f
T =125°C  
(see fig.13)  
j
Note (1) Pulsed duration = 300
µ
s, duty cycle
≤
1.5%  
4/11  

BUL705  
Electrical characteristics  
2.1  
Electrical characteristics (curves)  
Figure 1.  
Figure 3.  
Figure 5.  
Safe operating area  
Figure 2.  
Derating Curve  
DC current gain  
Figure 4.  
DC current gain  
Collector-emitter saturation
 
Figure 6.  
voltage  
Base-emitter saturation  
voltage  
5/11  

Electrical characteristics  
Figure 7.  
BUL705  
Inductive load fall time  
Figure 8.  
Inductive load storage time  
Figure 9.  
Reverse biased safe  
operating area  
2.2  
Test circuits  
Figure 10.
 
Resistive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
6/11  

BUL705  
Electrical characteristics  
Figure 11.
 
Inductive load switching test circuit  
1) Fast electronic switch  
2) Non-inductive resistor  
3) Fast recovery rectifier  
7/11  

Package mechanical data  
BUL705  
3
Package mechanical data  
In order to meet environmental requirements, ST offers these devices in ECOPACK®  
packages. These packages have a Lead-free second level interconnect. The category of  
second level interconnect is marked on the package and on the inner box label, in  
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering  
conditions are also marked on the inner box label. ECOPACK is an ST trademark.  
ECOPACK specifications are available at:

8/11  

BUL705  
Package mechanical data  
TO-220 MECHANICAL DATA  
mm.  
inch  
DIM.  
MIN.  
4.40  
0.61  
1.15  
0.49  
15.25  
10  
TYP  
MAX.  
4.60  
0.88  
1.70  
0.70  
15.75  
10.40  
2.70  
5.15  
1.32  
6.60  
2.72  
14  
MIN.  
0.173  
0.024  
0.045  
0.019  
0.60  
TYP.  
MAX.  
0.181  
0.034  
0.066  
0.027  
0.620  
0.409  
0.106  
0.202  
0.052  
0.256  
0.107  
0.551  
0.154  
A
b
b1  
c
D
E
0.393  
0.094  
0.194  
0.048  
0.244  
0.09
0.511  
0.137  
e
2.40  
4.95  
1.23  
6.20  
2.40  
13  
e1  
F
H1  
J1  
L
L1  
L20  
L30  
øP  
Q
3.50  
3.93  
16.40  
28.90  
0.645  
1.137  
3.75  
2.65  
3.85  
2.95  
0.147  
0.104  
0.151  
0.116  
9/11  

Revision history  
BUL705  
4
Revision history  
Table 4.  
Date  
22-May-2006  
Revision history  
Revision  
Changes  
1
Initial release.  
10/11  

BUL705  
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