STMicroelectronics-BUL742A

BUL742A  

®

HIGH VOLTAGE FAST-SWITCHING  

NPN POWER TRANSISTOR  

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■

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HIGH VOLTAGE CAPABILITY  

LOW SPREAD OF DYNAMIC PARAMETERS  

MINIMUM LOT-TO-LOT SPREAD FOR  

RELIABLE OPERATION  

■

VERY HIGH SWITCHING SPEED  

APPLICATIONS  

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FOUR LAMP ELECTRONIC BALLAST FOR:  

120 V MAINS IN PUSH-PULL  

3

2

1

CONFIGURATION;  

277 V MAINS IN HALF BRIDGE CURRENT  

FEED CONFIGURATION.  

SWITCH MODE POWER SUPPLIES  

TO-220  

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DESCRIPTION  

The BUL742A is manufactured using high voltage  

Multi Epitaxial Planar technology for high  

switching speeds and high voltage capability.  

Thanks to an increased intermediate layer, it has  

an intrinsic ruggedness which enables the  

transistor to withstand an high collector current  

level during breakdown condition, without using  

the transil protection usually necessary in typical  

converters for lamp ballast.  

INTERNAL SCHEMATIC DIAGRAM  

ABSOLUTE MAXIMUM RATINGS  

Symbol  

V

CES  

Parameter  

Collector-Emitter Voltage (V

BE

= 0)  

Collector-Emitter Voltage (I

B

= 0)  

Value  

950  

Unit  

V

V

V

V

CEO  

400  

V

EBO  

Emitter-Base Voltage  

V

(BR)EBO  

(I

C

= 0,

 

I

B

≤

2 A,

 

t

p

< 10

µ

s, T

j

< 150

o

C)  

I

C  

I

CM  

I

B  

Collector Current  

4

A

A

Collector Peak Current (t

p

<5 ms)  

Base Current  

8

2

A

I

BM  

P

tot  

T

stg  

T

j  

Base Peak Current (t

p

<5 ms)  

Total Dissipation at Tc = 25

o

C  

Storage Temperature  

4

70  

A

W

-65 to 150  

150  

Max. Operating Junction Temperature  

1/5  

October 2003  

BUL742A  

THERMAL DATA  

R

thj-case

Thermal Resistance Junction-Case  

R

thj-amb

Thermal Resistance Junction-Ambient  

Max  

Max  

1.78  

62.5  

ELECTRICAL CHARACTERISTICS

(T

case

= 25

o

C unless otherwise specified)  

Symbol  

Parameter  

Test Conditions  

V

CE

= 950 V  

Min.  

Typ.  

Max.  

Unit  

I

CES  

Collector Cut-off  

Current (V

BE

= 0)  

100  

µ

A  

I

CEO  

Collector Cut-off  

Current (I

B

= 0)  

V

CE

= 400 V  

I

C

= 10 mA  

250  

µ

A  

V

CEO(sus)

Collector-Emitter  

Sustaining Voltage  

(I

B

= 0)  

L = 25 mH  

400  

12  

V

V

(BR)EBO

Emitter-Base  

Breakdown Voltage  

(I

C

= 0)  

I

E

= 1 mA  

24  

V

V

CE(sat)  

V

BE(sat)  

h

FE  

Collector-Emitter  

Saturation Voltage  

I

C

= 1 A  

I

C

= 3.5 A  

I

B

= 0.2 A  

I

B

= 1 A  

0.5  

1.5  

V

V

Base-Emitter  

Saturation Voltage  

I

C

= 3.5 A  

I

B

= 1 A  

1.5  

V

DC Current Gain  

I

C

= 800 mA  

I

C

= 10 mA  

V

CE

= 3 V  

V

CE

= 5 V  

16  

10  

40  

RESISTIVE LOAD  

Storage Time  

Fall Time  

V

CC

= 250 V  

I

B1

= 0.5 A  

t

p

= 30

µ

s  

I

C

= 2.5 A  

I

B2

= -1 A  

(see figure 2)  

t

s  

t

f  

0.9  

100  

µ

s  

ns  

E

sb  

Avalanche Energy  

L = 2 mH  

(see figure 1)  

6

mJ  

Pulsed: Pulse duration = 300

µ

s, duty cycle 1.5 %  

Safe Operating Areas  

Derating Curve  

2/5  

BUL742A  

Figure 1:

Energy Rating Test Circuit  

Figure 2:

Resistive Load Switching Test Circuit  

3/5  

BUL742A  

TO-220 MECHANICAL DATA  

mm  

inch  

TYP.  

DIM.  

MIN.  

4.40  

1.23  

2.40  

0.49  

0.61  

1.14  

1.14  

4.95  

2.40  

10.00  

TYP.  

MAX.  

4.60  

1.32  

2.72  

0.70  

0.88  

1.70  

1.70  

5.15  

2.70  

10.40  

MIN.  

0.173  

0.048  

0.094  

0.019  

0.024  

0.044  

0.044  

0.194  

0.094  

0.394  

MAX.  

0.181  

0.052  

0.107  

0.027  

0.034  

0.067  

0.067  

0.202  

0.106  

0.409  

A

C

D

E

F

F1  

F2  

G

G1  

H2  

L2  

L4  

L5  

L6  

L7  

L9  

M

16.40  

0.645  

0.102  

13.00  

2.65  

14.00  

2.95  

0.511  

0.104  

0.600  

0.244  

0.137  

0.551  

0.116  

0.620  

0.260  

0.154  

15.25  

6.20  

15.75  

6.60  

3.50  

3.93  

2.60  

DIA.  

3.75  

3.85  

0.147  

0.151  

P011CI  

4/5  

BUL742A  

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  

granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  

subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  

are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  

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5/5